RIR Power Electronics Limited introduced a new family of Silicon Carbide (SiC) Merged-PiN Schottky (MPS) diodes, advancing power device performance for electric vehicles, industrial power systems, and energy infrastructure. By combining Schottky and PiN structures in a single monolithic device, the SiC MPS architecture addresses long-standing trade-offs between efficiency, high-voltage blocking, and ruggedness, delivering real-world reliability at high power and temperature.
Positioned for the next phase of global electrification across transportation, renewables, data centers, and industrial infrastructure, the devices leverage SiC’s inherent advantages—higher operating voltages, faster switching, and superior thermal behavior—to boost power density while reducing system losses.
Key advantages
- High surge current capability for inrush, short-circuit, and grid-disturbance events
- Low leakage at elevated temperatures for stable, predictable operation
- Improved avalanche and blocking robustness for DC-link and grid-tied systems
- Near-zero reverse recovery for ultra-fast, low-loss switching
- Higher system reliability with reduced need for snubbers, over-design, and derating
Target applications
- EVs and HEVs (traction, OBC, DC-DC)
- Data centers and AI power infrastructure
- Renewable energy and grid systems
- Industrial drives and motion control
- Aerospace and defense platforms
- Green hydrogen and electrolysis systems
“With our new 1200 V SiC MPS diodes, RIR is making high-performance Silicon Carbide more accessible, reliable, and deployment-ready,” said Dr. Harshad Mehta, Non-Executive Chairman, RIR Power Electronics Ltd. “Backed by decades of high-power semiconductor expertise, we are enabling designers worldwide to harness the full potential of SiC—confidently and efficiently—across the most demanding applications, including EVs, data centers, renewables, industrial systems, aerospace, and green hydrogen.”
Original – RIR Power Electronics