Magnachip Semiconductor Corporation announced a new series of Insulated Gate Bipolar Transistors (IGBTs) for solar inverters and industrial Energy Storage Systems (ESS), reinforcing its position in high-efficiency power semiconductors.
The new generation 650 V and 1200 V discrete IGBTs are engineered for inverter and ESS platforms, delivering higher current capacity via a significantly reduced cell pitch versus the prior generation. An improved Reverse Bias Safe Operating Area (RBSOA) enhances stability under harsh high-voltage and high-current conditions. Devices are offered in standard TO-247 and high-capacity TO-247 Plus packages to give designers flexibility across a wide range of power levels.
Magnachip already supplies IGBTs to major solar inverter OEMs and is expanding its portfolio to span residential through industrial systems up to 150 kW, enabling customers to align device selection with operating environments.
The new IGBTs leverage Advanced Field Stop Trench technology and refined process design. A ~40% reduction in cell pitch significantly increases current capacity within the same die area, while RBSOA is enhanced by more than 30% for robust operation across demanding conditions.
Roadmap updates include a high-current series up to 650 V/150 A and new 750 V products in the first half of 2026. Magnachip also plans a TO-247-4Lead option with a Kelvin source pin to improve switching efficiency—broadening design choices for higher-capacity, higher-efficiency solar and ESS systems.
“This new generation IGBT series enhances efficiency and reliability through refined process technologies,” said Hyuk Woo, CTO of Magnachip. “Building on our market-proven technology and production capabilities, we will continue to expand our solution lineup to better address diverse customer needs.”
Original – Magnachip Semiconductor