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Wolfspeed, Inc. announced that the Committee on Foreign Investment in the United States (CFIUS) has cleared the company’s issuance of equity to Renesas Electronics America Inc., completing a central element of Wolfspeed’s previously announced restructuring agreement supporting its Chapter 11 process.
“CFIUS clearance represents the final milestone in the execution of our prepackaged restructuring,” said Robert Feurle, Chief Executive Officer. “With this phase behind us, Wolfspeed is fully focused on broadening and diversifying our customer base, expanding our leadership in SiC power devices, and scaling with discipline across our global manufacturing footprint.”
Under the court-approved plan, Renesas—previously a pre-petition creditor—will convert its outstanding unsecured loan into a mix of equity and secured convertible debt. Following CFIUS approval, Renesas will receive a seat on Wolfspeed’s Board of Directors and has appointed Aris Bolisay, vice president of finance at Renesas.
Given Renesas’ substantial equity position and board representation in a U.S. semiconductor manufacturer, the transaction required CFIUS review and clearance. With authorization now secured, the escrowed shares are cleared for release to Renesas.
In conjunction with this final milestone, Wolfspeed will also release the remaining 2% allocation of common stock to legacy pre-petition equity holders, completing the 5% equity recovery provided under the restructuring plan. The initial 3% was distributed on the plan’s effective date in September, with the remaining 2% held in escrow pending regulatory approvals.
Total share count update: following these issuances, Wolfspeed’s common shares outstanding will increase to approximately 45.1 million. This reflects 16,852,372 shares issued to Renesas, 871,287 shares for the final 2% equity recovery to pre-petition shareholders, and approximately 1.5 million shares issued pursuant to prior conversions of the second-lien convertible notes. This total excludes any future issuances under convertible notes, warrants, or incentive compensation plans.
Original – Wolfspeed
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Wolfspeed, Inc. introduced its TOLT (TO-Leaded, Top-Side Cooled) package portfolio designed to deliver maximum power density for datacenter rack power supplies. By releasing heat from the top of the package, TOLT significantly improves cooling efficiency, enabling smaller, more reliable power systems that meet the rising demands of AI datacenters.
“AI is pushing datacenter OEMs to be incredibly strategic about the size and total efficiency of their power systems,” said Guy Moxey, vice president of Wolfspeed’s Industrial & Energy business. “Our TOLT product family offers a straightforward path to delivering higher-density, thermally optimized power systems capable of sustaining the demands of AI datacenters, and Wolfspeed’s Gen 4 technology helps these systems run cooler, more efficiently, and more reliably.”
Silicon carbide continues to outpace silicon in high-power applications, supporting gains in performance and system cost across AI datacenters, e-mobility, renewable energy, and battery energy storage. Wolfspeed’s U.S.-based silicon carbide substrate production underpins supply chain resilience and provides a stable domestic source for mission-critical power systems as large AI projects scale.
The initial 650 V TOLT products are available in multiple RDS(on) options, with additional details on Wolfspeed’s third top-side-cooled portfolio to follow in the second half of 2026.
Original – Wolfspeed
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STMicroelectronics N.V. reported Q4 2025 net revenues of $3.33 billion, gross margin of 35.2%, and operating income of $125 million, which includes $141 million related to impairment, restructuring charges and other phase-out costs. The company recorded a GAAP net loss of $30 million, or -$0.03 diluted EPS. On a non-U.S. GAAP basis, operating income was $266 million and net income was $100 million, or $0.11 diluted EPS, including a negative one-time tax impact of $0.18 per share.
For full year 2025, net revenues were $11.80 billion with a gross margin of 33.9%. Operating income totaled $175 million, including $376 million related to impairment, restructuring and other phase-out costs. GAAP net income was $166 million. On a non-U.S. GAAP basis, operating margin was 4.7% and net income was $486 million. Net Capex (non-U.S. GAAP) was $1.79 billion and free cash flow (non-U.S. GAAP) was $265 million.
Management noted that Q4 revenue came in above the mid-point of guidance, driven by Personal Electronics and, to a lesser extent, CECP and Industrial, while Automotive trailed expectations. Gross margin exceeded the mid-point largely on favorable mix, and Q4 marked a return to year-over-year growth.
At the mid-point, Q1 2026 guidance calls for net revenues of $3.04 billion, down 8.7% sequentially—better than average past seasonality—and continuing the Y/Y growth trajectory that began in Q4. Gross margin is expected to be about 33.7%, including ~220 basis points of unused capacity charges. For 2026, the company plans to invest $2.0–$2.2 billion in Net Capex (non-U.S. GAAP).
Strategic priorities include accelerating innovation, executing the program to reshape the manufacturing footprint and resize the global cost base, and strengthening free cash flow generation.
Original – STMicroelectronics
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Vishay Intertechnology, Inc. introduced five 1200 V MOSFET power modules built on its latest-generation silicon carbide (SiC) technology and housed in the fully insulated, compact SOT-227 package. The new Vishay Semiconductors devices—VS-SF50LA120, VS-SF50SA120, VS-SF100SA120, VS-SF150SA120, and VS-SF200SA120—deliver best-in-class forward voltage drop down to 0.83 V to cut conduction losses and raise system efficiency.
Offered in single-switch and low-side chopper configurations, each module integrates a SiC MOSFET with a soft body diode to minimize reverse-recovery charge, reducing switching losses in medium- to high-frequency designs. Target applications include solar inverters; off-board EV chargers; SMPS, DC/DC converters, UPS and HVAC systems; large battery storage; and telecom power supplies.
The SOT-227 form factor enables drop-in replacement for competing modules without PCB changes. Its molded, fully insulated design provides electrical isolation up to 2500 V for one minute, which can lower system cost by eliminating separate insulation between the device and heatsink.
Key characteristics include continuous drain current ratings from 50 A to 200 A, low on-resistance down to 12.1 mΩ, high-speed switching with low capacitance, and a maximum operating junction temperature of +175 °C. The devices are RoHS-compliant and UL-approved (file E78996).
Device highlights:
- VS-SF50LA120 — 1200 V, 50 A, 43 mΩ, low-side chopper, SOT-227
- VS-SF50SA120 — 1200 V, 50 A, 47 mΩ, single switch, SOT-227
- VS-SF100SA120 — 1200 V, 100 A, 23 mΩ, single switch, SOT-227
- VS-SF150SA120 — 1200 V, 150 A, 16.8 mΩ, single switch, SOT-227
- VS-SF200SA120 — 1200 V, 200 A, 12.1 mΩ, single switch, SOT-227
Samples and production quantities are available now with 13-week lead times.
Original – Vishay Intertechnology
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The Semiconductor Industry Association (SIA) announced that John Neuffer will retire in mid-2026 after 11 years as president and CEO. SIA represents 99% of the U.S. semiconductor industry by revenue and nearly two-thirds of non-U.S. chip firms.
“John has been an outstanding leader for the semiconductor industry at a time when U.S. technology leadership truly matters,” said Dr. Lisa Su, AMD chair and CEO and 2026 SIA board chair. “He helped strengthen the policy foundation that enables innovation, global competitiveness, and growth across our ecosystem. Because of his leadership, SIA is better positioned to support America’s economy, national security, and long-term technology leadership.”
Under Neuffer’s tenure, SIA secured major policy wins, including enactment and expansion of U.S. semiconductor manufacturing incentives that have catalyzed more than $600 billion in private investment and set the U.S. on track to more than triple domestic chip manufacturing capacity by 2032. The association also helped deliver billions in federal R&D funding to advance American chip innovation and bolster economic and national security.
SIA’s advocacy further supported critical trade outcomes, including the expansion of the Information Technology Agreement and a global agreement to prevent tariffs on cross-border data transfers, enhancing industry competitiveness. Neuffer also guided the organization through global chip shortages and pandemic-related production disruptions.
“It has been a genuine pleasure and an indelible point of pride for me to work alongside so many great leaders in this incredible industry and to play a part in advancing U.S. semiconductor leadership,” said Neuffer. “The challenges we face are dwarfed by the opportunities ahead, and I can’t wait to see what’s next. I will miss very much the high-performing team at SIA.”
To ensure a smooth transition, Neuffer will retire following the anticipated midyear appointment of his successor. SIA has retained Korn Ferry to conduct a comprehensive search.
Original – Semiconductor Industry Association
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Vanguard International Semiconductor Corporation (VIS) signed a technology licensing agreement with Taiwan Semiconductor Manufacturing Company (TSMC) covering high-voltage (650 V) and low-voltage (80 V) Gallium Nitride (GaN) processes. The agreement accelerates VIS’s roadmap for next-generation GaN power solutions serving data centers, automotive electronics, industrial control, and energy management—markets that demand high-efficiency power conversion and higher power density.
Under the pact, VIS will broaden its GaN-on-Si offering into high-voltage applications and establish a comprehensive GaN-on-Si platform alongside its existing GaN-on-QST platform, becoming the only foundry able to provide power GaN on both silicon and QST substrates. VIS plans to support a complete product span—low voltage (<200 V), high voltage (650 V), and ultra-high voltage (1200 V)—strengthening its position across critical power segments.
As silicon approaches performance limits in many power designs, GaN’s efficiency, power density, and compact footprint are enabling new architectures. VIS is building a portfolio from 15 V to 1200 V and will integrate the licensed technology with its current platforms. Process validation will run on VIS’s mature 8-inch line to ensure stability and yield, with development starting in early 2026 and production targeted for the first half of 2028.
“This technology licensing agreement not only underscores the engagement and ongoing collaborative efforts between VIS and TSMC, but also represents our continued commitment to advancing a comprehensive power GaN product portfolio and strengthening our strategic position in compound semiconductors,” said Dr. John Wei, President of VIS. “Through this collaboration, we will accelerate our support for customers in high-performance power conversion applications, enabling the semiconductor power technology to move into the next generation and helping realize a future of green energy and intelligent technologies.”
Original – Vanguard International Semiconductor
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Texas Instruments Incorporated reported fourth quarter revenue of $4.42 billion, net income of $1.16 billion, and earnings per share of $1.27, which included a $0.06 reduction not reflected in the original guidance. Management noted revenue decreased 7% sequentially and increased 10% year over year, with cash flow from operations over the trailing 12 months at $7.2 billion and free cash flow at $2.9 billion. Over the past year, TI invested $3.9 billion in R&D and SG&A, $4.6 billion in capital expenditures, and returned $6.5 billion to owners.
Q4 2025 vs. Q4 2024
- Revenue: $4.423B vs. $4.007B (+10%)
- Operating profit: $1.473B vs. $1.377B (+7%)
- Net income: $1.163B vs. $1.205B (-3%)
- EPS: $1.27 vs. $1.30 (-2%)
Cash generation (trailing 12 months, Q4 2025 vs. Q4 2024)
- Cash flow from operations: $7.153B vs. $6.318B (+13%)
- Free cash flow: $2.938B vs. $1.498B (+96%)
- Free cash flow as a % of revenue: 16.6% vs. 9.6%
Cash returned (trailing 12 months, Q4 2025 vs. Q4 2024)
- Dividends paid: $4.999B vs. $4.795B (+4%)
- Stock repurchases: $1.477B vs. $0.929B (+59%)
- Total cash returned: $6.476B vs. $5.724B (+13%)
Outlook
- Q1 2026 revenue expected in the range of $4.32B to $4.68B
- Q1 2026 EPS expected between $1.22 and $1.48
Free cash flow is defined as cash flow from operations less capital expenditures, plus proceeds from U.S. CHIPS and Science Act incentives.
Original – Texas Instruments
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Alpha and Omega Semiconductor Limited (AOS) introduced its αMOS E2™ 600 V Super Junction MOSFET platform and the first device from the family, the AOTL037V60DE2. Targeted at servers, workstations, telecom rectifiers, solar inverters, motor drives and industrial power systems, the platform addresses the core requirements of modern mid- to high-power SMPS and inverter designs: higher efficiency, greater power density, lower system cost and robust operation.
Engineered with a robust intrinsic body diode, αMOS E2™ reliably handles hard-commutation events—such as body-diode reverse recovery during short-circuits or start-up transients—to enhance system resilience. The AOTL037V60DE2, offered in a TOLL package, features a maximum RDS(on) of 37 mΩ. AOS application evaluations demonstrated body-diode ruggedness withstanding di/dt of 1300 A/µs under specified forward-current conditions at a junction temperature of 150 °C. Testing also confirmed superior Avalanche Unclamped Inductive Switching (UIS) capability and longer Short-Circuit Withstanding Time (SCWT) versus competing MOSFETs, translating into stronger system-level reliability under abnormal operating scenarios.
The platform is optimized for critical high-voltage topologies, including the slow leg of totem-pole PFC, LLC resonant converters, PSFB and cyclo-converters, helping designers meet stringent efficiency and power-density targets while maintaining robustness.
Technical highlights
• Optimized for soft-switching topologies with exceptionally low switching losses
• Rugged body diode with reduced Qrr for demanding, high-stress applications
• Enhanced robustness with strong UIS, inrush handling and wide SOA
• Designed to prevent self-turn-on for reliable operation under dynamic conditions
• Suitable for Totem Pole PFC, LLC, PSFB and CrCM H-4/Cyclo Inverter applicationsOriginal – Alpha and Omega Semiconductor
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Analog Devices, Inc. announced the appointment of Dr. Yoky Matsuoka as an independent director and member of the Board’s Corporate Development Committee, effective January 20, 2026. Her appointment expands the Board to 11 members.
Dr. Matsuoka is an executive officer of Panasonic Holdings, where she leads global innovation and new business. Her prior leadership roles include Vice President in Google’s healthcare organization, Chief Technology Officer at Google/Nest, co-founder and head of innovation at Google X, and a senior executive position at Apple. She also served as CEO of Quanttus, a wearable health technology startup.
“Yoky is an exceptional technologist and business leader whose experience integrating hardware, software and AI to deliver meaningful human outcomes aligns directly with ADI’s mission,” said Vincent Roche, ADI’s CEO and Chair. “Her focus on building sustainable, efficient and human-centric systems will help guide ADI as we scale our solutions across the physical and digital worlds.”
Before her Silicon Valley tenure, Dr. Matsuoka was an endowed professor at Carnegie Mellon University and the University of Washington, specializing in AI, robotics and neuroscience. She founded and directed the NSF ERC Center for Sensorimotor Neural Engineering and the Neurobotics Laboratory, advancing devices that restore human sensation and movement. A recipient of the MacArthur “Genius” Award, she used the grant to establish the YokyWorks Foundation, supporting children with physical and learning challenges.
Dr. Matsuoka holds a Ph.D. and S.M. from the Massachusetts Institute of Technology and a B.S. from the University of California, Berkeley, all in Electrical Engineering and Computer Science. She was featured on Forbes’ 50 Over 50: Innovation list and Inc.’s Top Female Founders list in 2023.
Original – Analog Devices
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CISSOID announced the CMT-PLA1BL12300MA, a 1200 V / 300 A half-bridge IGBT power module that pairs advanced switching technology with a widely adopted industry-standard CPAK-EDC package. The new module targets reliable, cost-effective upgrades in industrial power conversion, offering drop-in compatibility, enhanced mechanical robustness and greater design flexibility.
Engineered for high-frequency, high-performance systems—including UPS, motor and motion control, and industrial power supplies—the module leverages Trench Gate Field Stop (TG-FS) IGBT technology to balance switching speed and conduction losses while maintaining excellent short-circuit behavior. A high-surge freewheeling diode supports transient and overload events, and market-leading thermal conductance helps move heat quickly to boost power density and extend lifetime margins.
Key benefits:
- High efficiency with low saturation voltage and optimized switching to minimize dissipation
- Robust performance with continuous current capability up to 450 A and extended temperature margins
- Seamless integration via the CPAK-EDC industry-standard package for drop-in upgrades
- Reduced EMI from a fast, soft-recovery integrated diode, simplifying system design
Key technical features:
- Configuration: 1200 V / 300 A half-bridge IGBT power module
- Continuous DC current: 450 A (@ Tj = 90 °C)
- Low VCE(sat): 1.56 V (@ IC = 300 A, Tj = 25 °C); 1.78 V (@ IC = 300 A, Tj = 150 °C)
- Switching losses: Eon = 34 mJ, Eoff = 34.5 mJ (@ Tj = 150 °C)
- Thermal resistance: RθJC = 0.065 °C/W (IGBT); 0.1 °C/W (diode)
With this addition, CISSOID broadens its catalog of standard modules, giving designers proven building blocks to accelerate innovation in electric drives and industrial power conversion.
Original – CISSOID
