Vishay Intertechnology, Inc. has announced the release of two new 1200 V silicon carbide (SiC) MOSFET power modules designed to enhance efficiency and system reliability in automotive, industrial, energy, and telecommunications applications. The new modules, designated VS-MPY038P120 and VS-MPX075P120, integrate advanced SiC technology in a low-profile MAACPAK PressFit package and are aimed at supporting medium to high frequency operations.
Each module combines Vishay’s latest generation of SiC MOSFETs with an NTC thermistor for integrated temperature sensing and fast intrinsic SiC diodes for minimized reverse recovery. These features result in reduced switching losses and higher efficiency in a range of demanding applications, including electric and hybrid vehicle chargers, solar inverters, motor drives, UPS systems, HVAC systems, large-scale energy storage, and telecom power supplies.
The rugged transfer mold construction of the new modules contributes to longer operational lifespans compared to traditional designs, while offering improved thermal resistance. Their compact, low-profile package design minimizes parasitic inductance and electromagnetic interference (EMI), and helps conserve board space. In addition, the PressFit pin layout follows established industry standards, facilitating drop-in replacement for existing solutions with enhanced electrical performance.
The VS-MPY038P120 features a full-bridge inverter topology, an on-resistance of 38 mΩ, and a continuous drain current of 35 A at 80 °C. The VS-MPX075P120 adopts a three-phase inverter topology, with an on-resistance of 75 mΩ and a continuous drain current of 18 A. Both modules support high-speed switching, offer low capacitance, and operate at junction temperatures up to 175 °C. They are RoHS-compliant and halogen-free.
Samples and production volumes for the VS-MPX075P120 and VS-MPY038P120 are currently available, with standard lead times of 13 weeks.
Original – Vishay Intertechnology