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ROHM Co., Ltd. and Tata Electronics, a pioneering leader in India’s electronics and semiconductor manufacturing sector, announced a strategic partnership to manufacture semiconductors in India for both domestic and global markets. The collaboration leverages each company’s strengths to expand business opportunities and deepen ties between the Japanese and Indian semiconductor ecosystems.
As an initial focus, the partners will establish a manufacturing framework for power semiconductors in India by combining ROHM’s device technologies with Tata Electronics’ advanced backend capabilities. By integrating sales channels and networks, the partnership aims to unlock new opportunities in the Indian market and deliver higher-value solutions to a broad customer base.
As the first step, Tata Electronics will assemble and test ROHM’s India-designed automotive-grade Nch 100 V, 300 A Si MOSFET in a TOLL package, with mass production shipments targeted for next year. The companies will also explore co-development of high-value packaging technologies and will jointly market products manufactured through the collaboration.
The partnership embodies the Government of India’s “Make in India” vision and the philosophy of “Designed in India, Manufactured in India.” By building an end-to-end ecosystem that includes design, development and manufacturing within India, the ROHM–Tata partnership enhances Domestic Value Addition and supports a stable supply of products optimized for local market needs, with global reach.
“Tata Electronics is deeply committed to pioneering a thriving semiconductor industry in India. We are excited to partner with ROHM, a global leader in semiconductor solutions. With a strong legacy of quality and reliability across products for a broad range of markets, ROHM brings deep domain expertise to this partnership. Through our semiconductor assembly and test facilities, Tata Electronics will deliver advanced chip packaging services to support ROHM in creating products tailored for Indian and global markets. This partnership will go a long way in bringing in trust and resilience in the global semiconductor supply chain while also expanding our respective business opportunities,” said Dr. Randhir Thakur, CEO & MD, Tata Electronics.
“We are delighted to collaborate with Tata Electronics, a leading Indian corporate group with advanced packaging capabilities. Through this partnership, we aim to expand our lineup of packaged products manufactured in India and help build a sustainable, region-based supply chain network. We are confident that this collaboration will enable us to meet the growing demand from Indian customers seeking domestically produced semiconductors. We also envision supplying jointly manufactured products to the global market,” said Dr. Kazuhide Ino, Member of the Board, Managing Executive Officer, ROHM Co., Ltd.
Original – ROHM
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Micro Commercial Components introduced the MCAC055N20YH, a 200 V N-channel power MOSFET designed for compact, high-efficiency power designs where power density, footprint, and thermal performance are critical. Built on advanced Split-Gate Trench technology and housed in a space-saving DFN5060 package, the device combines fast switching with low conduction losses and robust thermal characteristics for applications spanning data center power, telecom infrastructure, industrial automation, renewable energy systems, and professional audio equipment.
With a 200 V VDS rating, 34 A continuous current capability, and a low RDS(on) of 55 mΩ, the MCAC055N20YH provides ample margin for voltage transients while minimizing heat and energy loss. Its 0.9 °C/W junction-to-case thermal resistance supports stable operation under heavy loads, enabling cooler, longer-lasting systems.
Features & benefits:
- 200 V N-channel power MOSFET for high-voltage industrial and telecom applications
- Split-Gate Trench technology optimized for low on-resistance and high switching speed
- Low RDS(on) of 0.055 Ω (max) at VGS = 10 V to reduce conduction losses and heat generation
- Excellent thermal performance with 0.9 °C/W RθJC for efficient heat transfer and stable high-power operation
- Compact DFN5060 package (5 mm × 6 mm) for high power density in space-constrained designs
- 200 V drain-source rating provides headroom for spikes and ringing in demanding 48–100 V systems
Original – Micro Commercial Components
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Fuji Electric Co., Ltd. announced an agreement with Robert Bosch GmbH (Bosch) to collaborate on silicon carbide (SiC) power semiconductor modules for electric vehicles featuring package compatibility. The partnership targets faster design cycles for automakers and greater flexibility in sourcing as EV adoption accelerates.
SiC devices are increasingly used in EV inverter systems for their high breakdown voltage and low loss, enabling smaller, lighter, and more efficient powertrains that extend driving range. Fuji Electric’s SiC modules leverage proprietary packaging to deliver high power density and efficiency, with flexible chip sizing and counts to meet a wide spectrum of power requirements and circuit configurations.
Under the collaboration, the companies plan to develop SiC modules with mechanical compatibility—aligned package outer dimensions and terminal positions—so either module can be integrated into an inverter without additional mechanical changes. This approach is intended to shorten design timelines and diversify procurement, allowing customers to use modules from both suppliers without altering inverter specifications.
Fuji Electric and Bosch also plan joint development of application technologies related to cooler design and terminal connections for SiC module integration, and will provide technical support to customers. The initiative aims to enhance supply chain stability and further promote the adoption of electric vehicles.
Original – Fuji Electric
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onsemi announced a collaboration agreement with GlobalFoundries to co-develop and manufacture advanced gallium nitride (GaN) power products on GF’s state-of-the-art 200 mm eMode GaN-on-silicon process, beginning with 650 V devices. The partnership pairs GF’s process platform with onsemi’s silicon drivers, controllers and thermally enhanced packaging to enable smaller, higher-efficiency systems for AI data centers, automotive, industrial, and aerospace, defense and security applications.
The roadmap targets power supplies and DC-DC converters for AI infrastructure, onboard chargers and DC-DC converters for electric vehicles, solar microinverters and energy storage systems, as well as motor drives and other high-growth industrial and mission-critical markets. By combining device technology and package integration, the companies aim to raise power density, improve efficiency and simplify system design.
“This collaboration brings together onsemi’s system and product expertise with GlobalFoundries’ advanced GaN process to deliver new 650 V power devices for high-growth markets. Paired with our silicon drivers and controllers, these GaN products will enable customers to innovate and build smaller, more efficient power systems for AI data centers, EVs, space applications and beyond. We are on track to begin providing samples to customers in the first half of 2026, and scale rapidly to volume production,” said Dinesh Ramanathan, Senior Vice President of Corporate Strategy, onsemi.
“By combining our 200 mm GaN-on-Si platform and U.S.-based manufacturing with onsemi’s deep system and product expertise, we’re accelerating high-efficiency solutions and building resilient supply chains for data centers, automotive, industrial, aerospace and defense, and other critical markets,” said Mike Hogan, Chief Business Officer, GlobalFoundries.
The effort expands onsemi’s intelligent power portfolio across low, medium and high-voltage lateral GaN and ultra high-voltage vertical GaN, enabling next-generation architectures that deliver more power in smaller footprints. Advantages include higher-frequency operation to reduce component count and size, bidirectional capability to unlock new topologies, and increased integration that combines GaN FETs with drivers, controllers, isolation and protection for faster design cycles and lower EMI.
Sampling is planned to begin in the first half of 2026.
Original – onsemi
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Texas Instruments (TI) announced the start of production at its newest 300 mm semiconductor fab in Sherman, TX, just three and a half years after breaking ground. TI leaders joined local and state officials to mark the opening of SM1, a state-of-the-art facility that will ramp in line with customer demand and ultimately produce tens of millions of chips daily for smartphones, automotive systems, medical devices, industrial robots, smart appliances and data centers.
As the largest foundational semiconductor manufacturer in the U.S., TI supplies analog and embedded processing devices that are essential to nearly every modern electronic system. Expanding the company’s 300 mm manufacturing footprint strengthens supply assurance and long-term capacity. By owning and controlling manufacturing, process technology and packaging, TI gains greater control over delivery and resilience for customers in any environment.
“The start of production at our newest wafer fab in Sherman, TX represents what TI does best: owning every part of the manufacturing process to deliver the foundational semiconductors that are vital for nearly every type of electronic system,” said Haviv Ilan, president and CEO of Texas Instruments. “As the largest analog and embedded processing semiconductor manufacturer in the U.S., TI is uniquely positioned to provide dependable 300 mm semiconductor manufacturing capacity at scale. We’re proud to have called North Texas home for nearly a century, and excited about how TI technology will enable the technological breakthroughs of the future.”
TI’s Sherman mega-site is planned for up to four connected wafer fabs, to be constructed and equipped as market demand warrants. At full build-out, the site is expected to support as many as 3,000 direct jobs, along with thousands more in supporting industries. The Sherman investment forms part of TI’s broader plan to invest more than $60 billion across seven fabs in Texas and Utah—positioned as the largest commitment to foundational semiconductor manufacturing in U.S. history. With 15 manufacturing sites worldwide, TI’s internal operations leverage decades of proven manufacturing expertise to provide greater supply-chain control and dependable delivery for customers.
Original – Texas Instruments
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Micro Commercial Components (MCC) introduced the MURZ50120P and MURZ75120P, high-voltage super fast recovery rectifiers in a robust TO-247AD package. Engineered for high-frequency power stages where efficiency and EMI performance are critical, these 1200 V diodes feature a maximum reverse recovery time (trr) of 0.22 μs and ultrasoft recovery characteristics to minimize switching losses and significantly reduce electromagnetic interference. Designers can meet tight efficiency and noise targets with less filtering and simpler EMI design.
A low forward voltage drop of 1.85 V cuts conduction losses and improves overall system efficiency. A near-zero temperature coefficient (ZTC) stabilizes forward voltage and switching behavior across wide temperature ranges, easing thermal management and worst-case analysis. High surge current capability—400 A for the MURZ50120P and 500 A for the MURZ75120P—combined with a planar die structure provides strong robustness against inrush and transient events, supporting reliable, repeatable designs.
The MURZ50120P supports an average forward current of 50 A, while the MURZ75120P offers 75 A, giving engineers flexibility to scale power levels or reduce the need for paralleling. Additional attributes include low reverse recovery charge (Qrr) of 2728 nC and 3342 nC for ultrasoft recovery and reduced EMI, plus a rugged TO-247AD through-hole package that delivers excellent thermal performance and mechanical stability while maintaining good creepage and clearance distances for high-voltage layouts.
Target applications include PFC stages, UPS systems, welding equipment and industrial power control—use cases that demand efficiency, ruggedness and high-frequency performance. The combination of 1200 V reverse voltage, high current capability and super fast recovery makes these devices a strong fit for off-line and other industrial high-voltage power systems.
Original – Micro Commercial Components
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Navitas Semiconductor Corporation and Cyient Semiconductors Private Limited, a fast-growing provider of ASIC, ASSP and power solutions, announced a strategic long-term partnership to accelerate GaN adoption in India and establish a complete end-to-end GaN ecosystem.
The collaboration outlines co-development of GaN products, digital and mixed-signal ICs, GaN-based system modules and design-enablement platforms addressing high-voltage, high-power markets in India, including AI data centers, electric mobility, performance computing, energy grid infrastructure and industrial electrification. The partners also intend to strengthen a local supply chain and manufacturing base aligned with the Government of India’s “Make in India” initiative, while deploying IC technologies to speed solution development in these segments.
Planned deliverables include products based on Navitas’ current GaN platforms alongside new devices tailored to India’s market needs. Cyient Semiconductors will focus on building a secure, local supply chain and ecosystem to reduce time-to-market for developers and OEMs across the region.
“This partnership represents a pivotal step in India’s semiconductor future in solving the complexities of power delivery at high voltages,” said Suman Narayan, CEO, Cyient Semiconductors. “By combining Navitas’ proven GaN technology with Cyient Semi’s design, manufacturing and supply-chain strengths, we’re creating a self-sustaining ecosystem that will accelerate the market adoption of GaN. Our goal is to make GaN accessible to every OEM looking to design, build and scale from India.”
“I believe the growth of GaN technology in India will exceed global trends, and Cyient Semiconductors is the perfect partner for Navitas to drive this revolution,” said Chris Allexandre, President and CEO, Navitas Semiconductor. “Together, Navitas and Cyient will power India’s vision of India for India—innovation, by India, for the world.”
The initiative is designed to empower Indian design houses and OEMs with locally sourced GaN components, manufacturing support and engineering collaboration, enabling faster development cycles and lowering barriers to GaN adoption. It also reinforces Cyient Semiconductors’ focus on driving semiconductor innovation, localization and scalability across critical technology sectors, while establishing a direct channel for Indian customers to access GaN technology with reliable procurement and technical support.
Original – Navitas Semiconductor
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DISCO CORPORATION announced two advancements to support wafer thinning and post-thinning quality at scale: the DFG8561, a fully automatic grinder supporting Φ300 mm wafers, and DP26, a new dry polishing wheel series engineered for small-die devices. Both will be exhibited at SEMICON Japan 2025 (December 17–19, Tokyo Big Sight).
Developed to address accelerating migration from 5-/6-inch to 8-inch and 300 mm wafers for automotive and home-appliance MCUs, analog ICs and sensors, the DFG8561 targets higher throughput, tighter thickness control and broader material compatibility. Key enhancements include a low-vibration, low-thermal-expansion rotation axis on the wafer retaining table to improve within-wafer and wafer-to-wafer thickness accuracy; a high-power 6.3 kW spindle for difficult-to-grind materials such as SiC and sapphire; and optimized transfer/cleaning that reduces processing time, delivering 1.6× productivity versus the conventional model. A built-in vacuum unit cuts footprint by 12%, boosting output per unit floor area. Usability upgrades enable recipe configuration per wafer within the same cassette for multi-variety, low-volume production, with main data types visualized as graphs on a 19-inch monitor.
Complementing the grinder, DP26 dry polishing wheels are designed to remove post-DBG damage on small-die wafers in memory and RFID-class applications where further thinning and high mechanical strength are critical. Using an improved pad design and materials, DP26 achieves stable processing of approximately 1 mm × 1 mm small die while maintaining post-process die strength, and delivers a more stable removal amount during polishing compared with the conventional product—contributing to reduced TTV within the wafer.
Together, DFG8561 and DP26 provide an integrated approach from high-accuracy 300 mm grinding to damage-mitigating dry polishing for small-die devices, supporting higher productivity, tighter process control and robust device strength across advanced back-end manufacturing and OSAT environments.
Original – DISCO
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onsemi announced an extension of its long-standing strategic engagement with FORVIA HELLA, with the adoption of onsemi’s PowerTrench® T10 MOSFET technology across FORVIA HELLA’s advanced automotive platforms. The new long-term agreement deepens the companies’ collaboration and positions them to deliver innovative solutions through the next decade of automotive transformation.
PowerTrench® T10 MOSFET technology combines ultra-low conduction and switching losses to raise efficiency and power density in compact footprints while maintaining high reliability. The shielded gate power trench architecture reduces output capacitance and improves key figures of merit via lower drain-to-source resistance and gate charge—enablers for more efficient, cost-effective designs across a wide range of automotive applications. T10 power MOSFETs are manufactured at onsemi’s state-of-the-art facility in East Fishkill, NY.
“onsemi’s next-generation MOSFETs are a key enabler for our advanced automotive platforms. This collaboration allows us to offer our customers future-proof solutions with greater efficiency and reliability, supporting electrification and delivering innovative, cost-effective solutions that meet the demands of modern automotive systems,” said Sven Hoenecke, Executive Vice President, Purchasing, FORVIA HELLA.
“This extension underscores the strength of our 25-year collaboration with FORVIA HELLA and highlights the trust they place in onsemi to deliver next-generation power solutions. The integration of the T10 power MOSFETs will help enable the future of electrified and software-defined vehicles, where efficiency, performance, and scalability are critical,” said Simon Keeton, Group President, Power Solutions Group, onsemi.
As vehicle electrification accelerates and demand grows for higher-performing, compact and cost-effective power systems, the collaboration underscores the central role of power semiconductors in next-generation automotive architectures. By combining onsemi’s intelligent power portfolio with FORVIA HELLA’s systems expertise, the companies are addressing the rising electrical demands of automated driving, safety and electrification.
Original – onsemi
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Navitas Semiconductor announced an expanded distribution agreement with Avnet, establishing Avnet as a globally franchised strategic distribution partner.
The move is part of Navitas’ ongoing consolidation of franchised distribution and significantly broadens its channel presence through Avnet, one of the world’s largest electronic component distributors. It follows strong traction by Avnet Silica in serving customers across Europe.
Under the agreement, Avnet will provide technical and commercial support for Navitas’ GaN and SiC high-voltage, high-power wide bandgap devices. The partnership is intended to accelerate deployments in AI data centers, high-performance computing, renewable energy, grid infrastructure and industrial electrification.
The consolidated model allows customers to benefit from regional specialists such as Avnet Silica in Europe, while gaining a globally aligned framework with Avnet across all geographies for fast access to Navitas products and consistent, expert technical support.
“This builds considerably on the successful role that Avnet Silica has played in reaching and developing our strategically important European customers,” said Alessandro Squeri, Vice President Global Distribution, Operations & Transformation, Navitas. “As we consolidate our distribution network to align with high-power market focus, expanding Avnet’s franchise globally was a natural next step, and their engineering expertise, global reach and deep customer relationships make them an ideal partner to accelerate adoption of our GaN and SiC platforms worldwide.”
“The global expansion of the Avnet Silica partnership is testament to the strength of our teams in supporting customers in these demanding high-power markets,” said Alex Iuorio, Senior Vice President, Global Supplier Development, Avnet. “Navitas’ leadership in wide bandgap innovation aligns strongly with Avnet’s commitment to enabling advanced, energy-efficient solutions. We look forward to extending this collaboration as customers drive the next wave of electrification and high-performance power design.”
Original – Navitas Semiconductor
