Mitsubishi Electric Corporation has announced the launch of new standard-isolation (6.0 kVrms) and high-isolation (10.2 kVrms) modules in its 4.5 kV / 1,200 A XB Series of high-voltage insulated-gate bipolar transistors (HVIGBTs), scheduled for market release on December 9, 2025.
These newly developed high-capacity power semiconductor modules are designed to deliver improved moisture resistance and operational reliability, supporting efficient inverter performance in large-scale industrial equipment such as railcars, even under challenging environmental conditions including outdoor use.
The advanced HVIGBT modules are equipped with IGBT elements featuring Mitsubishi Electric’s proprietary relaxed field of cathode (RFC) diode and carrier-stored trench-gate bipolar transistor (CSTBT) structure. Through the integration of new electric field relaxation and surface charge control mechanisms, the modules achieve a reduction of approximately 30% in chip termination region size. Moreover, the new devices deliver around 20 times greater moisture resistance compared to existing products, making them well-suited for high-humidity environments.
In terms of performance improvements, the modules offer approximately 5% lower total switching loss relative to earlier models and demonstrate about 2.5 times higher reverse-recovery safe-operating area (RRSOA) tolerance. These enhancements collectively contribute to increased efficiency, greater reliability, and extended inverter life cycles in demanding industrial applications.
Mitsubishi Electric plans to showcase the new HVIGBT modules at the 40th Nepcon Japan R&D and Manufacturing show in Tokyo from January 21 to 23, 2026, with additional exhibitions planned across North America, Europe, China, India, and other global regions.
With these technological advancements, the company aims to support the broader adoption of environmentally responsible power solutions and contribute to global carbon neutrality goals.
Original – Mitsubishi Electric