Micro Commercial Components (MCC) has announced the release of the MCP012N20YH, a 200V N-Channel power MOSFET developed to address thermal and efficiency challenges in high-voltage power stage applications. Built on MCC’s Split Gate Trench (SGT) technology and housed in a thermally enhanced TO220AB(B) package, the device delivers low conduction losses, fast switching, and robust thermal performance for a wide range of industrial and communications systems.
The MCP012N20YH features a low typical RDS(on) of 12 milliohms and supports high junction temperatures up to 175°C, enabling compact, high-density power system designs. The optimized TO220AB(B) package offers an improved thermal path that allows for higher current handling and lower temperature rise, reducing the need for oversized heatsinks and simplifying thermal management.
Ideal for motor drives, DC-DC converters, base station power amplifiers, and industrial power stages, the MCP012N20YH supports improved efficiency, greater reliability, and easier integration with its industry-standard footprint.
Key Features and Benefits:
- 200V N-Channel MOSFET with Split Gate Trench (SGT) technology
- Low RDS(on): 12 mΩ (typical) for reduced conduction losses
- Fast switching speeds improve overall system performance
- High junction temperature capability (≤175°C) enhances thermal reliability
- Strong avalanche performance and robust safe operating area (SOA)
- Thermally optimized TO220AB(B) package with standard footprint for simplified design-in and improved heat dissipation
The MCP012N20YH offers a cost-effective, high-efficiency solution for designers seeking to improve power density and reliability in demanding high-voltage applications.
Original – Micro Commercial Components