SemiQ Inc has introduced five new SOT-227 modules as part of its expanding family of 1200 V Gen3 SiC MOSFETs. The newly launched modules offer RDSon values of 7.4 mΩ, 14.5 mΩ, and 34 mΩ, providing flexibility and enhanced performance for demanding power conversion systems.
These GCMS series modules integrate Schottky Barrier Diodes (SBDs), resulting in lower switching losses at high temperatures compared to the non-SBD GCMX modules. The devices are engineered for medium-voltage, high-power applications including battery chargers, photovoltaic inverters, server power supplies, and energy storage systems.
All modules undergo rigorous screening, including wafer-level gate-oxide burn-in testing beyond 1400 V and avalanche testing up to 800 mJ (330 mJ for 34 mΩ variants). They are designed for robustness, ease of installation, and thermal performance, featuring isolated backplates and direct mounting capability to heatsinks.
The 7.4 mΩ GCMX007C120S1-E1 module achieves low switching losses of 4.66 mJ (3.72 mJ turn-on, 0.94 mJ turn-off) and a body diode reverse recovery charge of 593 nC. Junction-to-case thermal resistance ranges from 0.23°C/W to 0.70°C/W depending on the module.
Commenting on the release, Dr. Timothy Han, President at SemiQ, stated: “The expansion of our third-generation 1200 V SiC MOSFET family marks another key milestone in SemiQ’s mission to deliver superior silicon carbide solutions for high-performance power applications. By broadening our portfolio with lower resistance options and rugged, easy-to-mount SOT-227 packages, we’re empowering designers to achieve higher efficiency, faster switching, and greater reliability across a wide range of energy and industrial systems.”
Original – SemiQ