Micro Commercial Components has introduced the MCGD115NP10L, a 100 V dual N- and P-channel MOSFET designed to simplify circuit design and reduce footprint in space-constrained power systems.
By integrating complementary N- and P-channel MOSFETs into a single DFN3333-D package, the device reduces component count and PCB complexity, particularly in high-side and low-side switching configurations. This integration enables more compact layouts while maintaining efficient switching performance.
The device offers a maximum N-channel RDS(on) of 115 mΩ at VGS = 10 V and supports current up to 10 A, making it suitable for applications such as DC-DC converters, load switches, motor drivers, and general power management circuits. Built on trench low-voltage MOSFET technology, it delivers low conduction losses and stable operation in high-density designs.
Additional advantages include strong thermal performance and side-wettable flanks for improved automated optical inspection (AOI) and assembly reliability, supporting high-volume manufacturing environments.
From a market perspective, this product aligns with the increasing demand for higher integration in low- to mid-voltage power stages, particularly in consumer electronics, industrial systems, and compact power modules. While wide-bandgap devices dominate higher voltage segments, integrated silicon MOSFET solutions like this remain critical for optimizing cost, space, and design simplicity in lower voltage applications.
Original – Micro Commercial Components