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At PCIM Europe 2025 in Nuremberg, Infineon Technologies AG will showcase its latest semiconductor, software and tooling solutions that help to solve today’s green and digital transformation challenges. At booth #470 in hall 7, the company will present highlights from its extensive power device portfolio, covering all relevant power technologies spanning silicon (Si), silicon carbide (SiC), and gallium nitride (GaN). Under the motto “Driving decarbonization and digitalization. Together”, Infineon will offer numerous demonstrations and presentations as well as the opportunity to talk to its experts.
Infineon’s PCIM 2025 demonstration highlights will include solutions in the following areas:
- Silicon and Wide Bandgap (WBG) at its best: At PCIM, Infineon will showcase its latest package and product developments across Si, SiC and GaN for applications such as AI data center power supplies, robotics, solar systems, and on-board chargers. Highlights include the new CoolSiC™ JFET technology, which offers outstanding levels of efficiency, system integration, and robustness for solid-state power distribution applications. Further solutions on display will include the CoolSET™ system in package, various innovative solutions in CoolGaN™ transistor technology and the proven CoolMOS™ 8 and OptiMOS™ 8 in silicon.
- Sustainable mobility, with zero-emission electromobility: Infineon’s power solutions accelerate the transition to e-mobility by enabling efficient traction inverters, on-board chargers, DC-DC converters and battery management systems. At PCIM, the company will showcase its AURIX™ Kit for xEV power conversion, a versatile platform for the development of digitally controlled DC-DC converters with different topologies and control methods. In addition, Infineon will present new WBG innovations for on-board chargers and DC-DC converters that offer enhanced performance and design flexibility.
- Green, intelligent buildings and smarter living: Residential energy systems such as photovoltaic panels and heat pumps, together with smart, energy-efficient electronic devices and EV chargers, are key to reducing the carbon footprint in the home. Semiconductors play a vital role in enhancing energy efficiency and enabling smart, connected buildings. At PCIM, Infineon will showcase SiC- and GaN-based technologies that offer high energy efficiency and reliability for energy generation and consumption. On display will be full system solutions for solar inverters, as well as demos for power optimization and heat pump boosting.
- Powering AI – from grid to core: The exponential data growth driven by digitalization and AI is increasing the energy demand of data centers. At PCIM, Infineon will show how its solutions, extending from the grid to the core, leverage Si, SiC, and GaN technologies to maximize the efficiency, power density and reliability of AI infrastructure. The portfolio includes top-of-rack switches, power supplies and battery backup units. A power system reliability modeling solution enables real-time health monitoring for data centers, helping to reduce outages and total cost of ownership.
Infineon will also contribute to the PCIM conference program and the various expo stages. An overview of all contributions by Infineon experts is available at www.infineon/pcim.
Visitors who are unable to attend the live show can register for Infineon’s digital event platform.
Original – Infineon Technologies
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Navitas Semiconductor will be exhibiting several GaN and SiC breakthroughs in AI data centers, EVs, motor drives, and industrial applications at PCIM 2025 (6th – 8th May, 2025).
PCIM is the leading exhibition for power electronics, intelligent motion, renewable energy, and energy management. Visitors are invited to visit the “Planet Navitas” booth (Hall 9, Booth #544) to learn about Navitas’ mission to ‘Electrify our World™’ by advancing the transition from legacy silicon to next-generation, clean energy, GaN and SiC power semiconductors.
Major technology and system breakthroughs include:
- The world’s first production-released 650 V bi-directional GaNFast ICs and IsoFast, high-speed isolated gate-drivers. This creates a paradigm shift in power by enabling the transition from two-stage to single-stage topologies. Targeted applications range widely across EV charging (On-Board Chargers (OBC) and roadside), solar inverters, energy storage, and motor drives. The recorded launch event video can be viewed here.
- Automotive-qualification high-power GaNSafe™ ICs, which have been qualified to both Q100 and Q101, unlocking unprecedented power density and efficiency for on-board chargers (OBCs) and HV-LV DC-DC converters applications. A comprehensive reliability report has been created that analyzes over 7 years of production and field data and demonstrates GaN’s technology track record, alongside generational and family improvements in robustness and reliability, establishing GaN power ICs as highly reliable and automotive-ready.
- The latest release of the SiCPAK power modules, which utilize advanced epoxy-resin potting technology and GeneSiC™ trench-assisted planar technology, to enable 5x lower thermal resistance shift for extended system lifetime. Rigorously designed and validated for the most demanding high-power environments, they prioritize reliability and high-temperature performance. Target markets include EV DC fast chargers (DCFC), industrial motor drives, interruptible power supplies (UPS), solar inverters and power optimizers, energy storage systems (ESS), industrial welding, and induction heating.
- Newly released GaNSense™ Motor Drive ICs with bi-directional loss-less current sensing, voltage sensing, and temperature protection, further enhance performance and robustness beyond what is achievable by any discrete GaN or discrete silicon devices.
- Automotive Qualified (AEC-Q101) Gen-3 Fast SiC MOSFETs with ‘trench-assisted planar’ technology: Enabled by over 20 years of SiC innovation leadership, GeneSiC™ technology leads on performance with the Gen-3 ‘Fast’ SiC MOSFETs with ‘trench-assisted planar’ technology. This proprietary technology provides world-leading performance over temperature, delivering cool-running, fast-switching, and superior robustness to support faster charging EVs and up to 3x more powerful AI data centers.
- GaNSlim™: Simple. Fast. Integrated: A new generation of highly integrated GaN power ICs that will further simplify and speed up the development of small form factor, high-power-density applications by offering the highest level of integration and thermal performance. Target applications include chargers for mobile devices and laptops, TV power supplies, and lighting systems of up to 500W.
- World’s First 8.5 kW AI Data Center Power Supply: See the world’s first 8.5 kW OCP power solution achieving 98% efficiency for AI and hyperscale data centers. Featuring high-power GaNSafe™ power ICs and Gen-3 Fast SiC MOSFETs in 3-Phase Interleaved CCM Totem-Pole PFC and 3-Phase LLC topologies to provide the highest efficiency, performance, and lowest component count.
- World’s Highest Power Density AI Power Supply: Navitas delivers efficient 4.5 kW power in the smallest power-supply form factor for the latest AI GPUs that demand 3x more power per rack. The optimized design uses high-power GaNSafe ICs and Gen-3 Fast SiC MOSFETs enabling the world’s highest power density with 137 W/in3 and over 97% efficiency.
- ‘IntelliWeave’ Patented Digital Control Optimized for AI Data Center Power Supplies: Combined with high-power GaNSafe™ and Gen-3 ‘Fast’ SiC MOSFETs to enable PFC peak efficiencies of 99.3% and reduce power losses by 30% compared to existing solutions.
Original – Navitas Semiconductor
