Adoption of wide band gap (WBG) components—specifically gallium nitride (GaN) and silicon carbide (SiC)—continues to gain traction as manufacturers focus on decarbonization and sustainability. WBG
Event Details
Adoption of wide band gap (WBG) components—specifically gallium nitride (GaN) and silicon carbide (SiC)—continues to gain traction as manufacturers focus on decarbonization and sustainability. WBG devices are providing new solutions and answers to the challenges that power device designers face in an era in which the watchword is“ efficiency.”
Day 1 will focus on GaN and SiC semiconductors and their applications in power electronics.
The increasing demand for high voltage devices in high-power applications is driving developments in power IC technologies. Meanwhile, battery powered devices continue to demand components that consume as low power as possible to ensure longer operations.
Day 2 will focus on power conversion and managing design trends in low- and high-power applications.
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Time
11 (Tuesday) 3:30 pm - 12 (Wednesday) 6:00 pm(GMT+02:00)View in my time