This book presents a comprehensive treatise on the extraction of semiconductor diode parameters using various methods. Its focus is on metal-semiconductor, metal-insulator-semiconductor, and p-n junction diodes, covering a wide range of metals and semiconductors, including elemental, compound, organic, and nanostructured materials. By bringing together these methods in one place, this book provides a much-needed standardized point of reference for the field.

Master fundamental technologies for modern semiconductor integrated circuits with this definitive textbook. It includes an early introduction of a state-of-the-art CMOS process flow, exposes students to big-picture thinking from the outset, and encourages a practical integration mindset. Extensive use of process and TCAD simulation, using industry tools such as Silvaco Athena and Victory Process, provides students with deeper insight into physical principles, and prepares them for applying these tools in a real-world setting.

Power Electronics Handbook delivers an expert guide to power electronics and their applications. The book examines the foundations of power electronics, power semiconductor devices, and power converters, before reviewing a constellation of modern applications. Comprehensively updated throughout, this new edition features new sections addressing current practices for renewable energy storage, transmission, integration, and operation, as well as smart-grid security, intelligent energy, artificial intelligence, and machine learning applications applied to power electronics, and autonomous and electric vehicles.

Fundamentals of Semiconductor Materials and Devices is a textbook that presents the advanced principled underlying semiconductors in an accessible and comprehensive way. Combining material from both engineering and physics, it remains grounded throughout in practical applications of semiconductors. Its approach makes it ideal for readers looking to gain a thorough understanding of this ubiquitous technology.

Design of Three-phase AC Power Electronics Converters contains a systematic discussion of the three-phase AC converter design considering various converter electrical, thermal, and mechanical subsystems and functions. Focusing on establishing converter components and subsystems models needed for the design, the text demonstrates example designs for these subsystems and for whole three-phase AC converters considering interactions among subsystems. The design methods apply to different applications and topologies.

Substantially expanded and updated, the new edition of this classic Principles of Power Electronics textbook provides unrivalled coverage of the fundamentals of power electronics. Comprehensive coverage of foundational concepts in circuits, magnetics, devices, dynamic models, and control establishes a strong conceptual framework for further study. New topics include SiC and GaN wide-bandgap materials, superjunction MOSFET and IGBT devices, advanced magnetics design, multi-level and switched-capacitor converters, RF converter circuits, and EMI.

The United States, Taiwan, and China are bound within a “silicon triangle.” Semiconductors link our geopolitics, our ongoing economic prosperity, and our technological competitiveness. This book draws on the deliberations of a multidisciplinary Hoover Institution–Asia Society working group of technologists, economists, military strategists, industry players, and regional policy experts to contemplate the dynamic global supply chain in semiconductors—one in which US industry faces growing vulnerabilities, China aggressively promotes home-grown semiconductor mastery, and Taiwan finds itself with a crucial monopoly on high-end logic chips sought by buyers globally.

This book provides real stories about the South Korean semiconductor community. It explores the lives and careers of six influential semiconductor engineers who all studied at Korea Advanced Institute of Science and Technology (KAIST) under the mentorship of Dr. Kim Choong-Ki, the most influential semiconductor professor in South Korea during the last quarter of the twentieth century. Kim’s students became known as “Kim’s Mafia” because of the important positions they went on to hold in industry, government, and academia.

75th Anniversary of the Transistor is a commemorative anniversary volume to celebrate the invention of the transistor. The anniversary volume was conceived by the IEEE Electron Devices Society to provide comprehensive yet compact coverage of the historical perspectives underlying the invention of the transistor and subsequent evolution into a multitude of integration and manufacturing technologies and applications. The book reflects transistor's development since inception to the current state of the art that continues to enable scaling to very large-scale integrated circuits of higher functionality and speed.

This handbook presents the key properties of silicon carbide (SiC), the power semiconductor for the 21st century. It describes related technologies, reports the rapid developments and achievements in recent years, and discusses the remaining challenging issues in the field.

Whether you’re narrowly technical or don’t know silicon from silly putty, working directly in hardware technologies and want to know more, or simply a curious person seeking hard information about the technology that powers the modern world, Understanding Semiconductors will be an informative, dependable resource.

This book focuses on the thermal reliability of power semiconductor device by looking at the failure mechanism, thermal parameters monitoring, junction temperature estimation, lifetime evaluation, and thermal management. Theoretical analysis and experimental tests are presented to explain existing reliability improvement techniques. This book is a valuable reference for the students and researchers who pay attention to the thermal reliability design of power semiconductor device.

Wide Bandgap Semiconductors for Power Electronics is a comprehensive and authoritative guide to wide bandgap materials silicon carbide, gallium nitride, diamond and gallium(III) oxide. With contributions from an international panel of experts, the book offers detailed coverage of the growth of these materials, their characterization, and how they are used in a variety of power electronics devices such as transistors and diodes and in the areas of quantum information and hybrid electric vehicles.

GaN Power Devices and Applications textbook Edited by Alex Lidow, Ph.D. Since the 2019 release of the 3rd edition textbook, GaN Transistors for Efficient Power Conversion, published by J. Wiley, there has been rapid adoption of GaN transistors and integrated circuits into a myriad of end-use applications such as robots, drones, AI computers, AC adapters, autonomous vehicles, and even vacuum cleaners. This book, GaN Power Devices and Applications, provides an update on gallium nitride technology and applications by leading experts.

This book introduces the basics of entrepreneurship and a methodology for the study of entrepreneurship in electrical engineering and other engineering fields. Entrepreneurship is considered here in three fields of electrical engineering, viz. power semiconductor devices, power electronics and electric machines and drive systems, and their current practice. It prepares the reader by providing a review of the subject matter in the three fields, their current status in research and development with analysis aspect as needed, thus allowing readers to gain self-sufficiency while reading the book.

The book covers thyristor controlled drives, single phase semi and fully controlled converters connected to separately excited and D.C series motors – continuous current operation – output voltage and current wave-forms – speed and torque expressions – speed – torque characteristics - problems on converter fed d.c motors.

This updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications.

Characterization of Wide Bandgap Power Semiconductor Devices presents comprehensive methods with examples for the characterization of this important class of power devices. The book covers pulsed static characterization; junction capacitance characterization; fundamentals of dynamic characterization; gate drive for dynamic characterization; layout design and parasitic management; protection design for double pulse test; measurement and data processing for dynamic characterization; cross-talk consideration; impact of three-phase system; and topology considerations.

Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment here focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. The book will appeal to practicing engineers in the power semiconductor device community.

This book addresses the key challenges that WBG power semiconductors face during integration, including heat resistance, heat dissipation and thermal stress, noise reduction at high frequency and discrete components, and challenges in interfacing, metallization, plating, bonding and wiring. Experts on the topic present the latest research on materials, components and methods of reliability and evaluation for WBG power semiconductors and suggest solutions to pave the way for integration.