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Innoscience, United Automotive Electronic Systems (UAES), and NOVOSENSE Microelectronics have entered into a strategic cooperation agreement to jointly develop next-generation intelligent integrated Gallium Nitride (GaN) products for new energy vehicles (NEVs). The collaboration aims to enhance reliability, efficiency, and power density in automotive power electronics, paving the way for wider GaN adoption across the industry.
GaN: Transforming Automotive Power Systems
Gallium Nitride is emerging as a key enabler of automotive electrification. Compared to traditional silicon-based devices, GaN offers superior switching performance, higher power density, and greater efficiency, allowing for smaller, lighter, and more energy-efficient vehicle systems. These advantages directly address the industry’s growing focus on electrification, lightweight design, and sustainability.Combining Expertise Across the Value Chain
Through joint research, development, and validation, the three companies will address challenges related to performance, reliability, and cost in GaN-based automotive systems. Innoscience brings world-class GaN device technology, UAES contributes extensive system integration and application expertise, and NOVOSENSE adds advanced analog and mixed-signal IC design capabilities. Together, they aim to deliver commercially viable, high-performance GaN solutions tailored to the evolving needs of NEV manufacturers.Dr. Jingang Wu, CEO of Innoscience, emphasized that the collaboration aligns device innovation with real-world automotive requirements, enabling GaN’s full potential in vehicle electrification. Dr. Xiaolu Guo, Deputy General Manager of UAES, highlighted the importance of combining system and component-level expertise to accelerate GaN industrialization. NOVOSENSE founder and CEO Shengyang Wang noted that this alliance strengthens cooperation across the entire value chain, ensuring both technological advancement and market impact.
Accelerating the Future of Electrified Mobility
This strategic partnership represents a significant step forward for the automotive semiconductor industry. By leveraging complementary strengths, Innoscience, UAES, and NOVOSENSE are creating a powerful ecosystem to advance GaN innovation, strengthen the NEV value chain, and accelerate the transition toward more efficient and sustainable electric mobility solutions.Original – Innoscience Technology
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ROHM and United Automotive Electronic Systems Co., Ltd., (UAES), a leading Tier 1 automotive supplier in China, have recently entered into a long-term supply agreement for SiC power devices.
Since 2015, ROHM and UAES have been collaborating and carrying out detailed technical exchanges on automotive applications utilizing SiC power devices. This partnership deepened in 2020 with the establishment of the joint SiC technology laboratory at the UAES headquarters in Shanghai, China. And in 2021 ROHM’s advanced SiC power devices and peripheral components were highly evaluated by UAES, resulting in ROHM being selected as a preferred supplier.
The close long-standing technical partnership has led to the production and adoption of numerous automotive products equipped with ROHM SiCs, such as onboard chargers and inverters for electric vehicles. SiC power devices play a crucial role in enhancing the efficiency and performance of a variety of systems, contributing to extending the cruising range and reducing battery size.
This long-term supply agreement ensures UAES sufficient access to SiC power devices to meet the growing demand for SiC-based inverter modules, which have been supplied to customers since November 2023. Going forward, both companies will deepen their collaboration, contributing to technological innovation in the automotive sector by accelerating the development of cutting-edge SiC power solutions for EVs.
- Guo Xiaolu, Deputy General Manager, United Automotive Electronic Systems Co., Ltd.
‘The growing popularity of electric vehicles in the Chinese market has made the adoption and integration of power semiconductors like SiC increasingly important. ROHM, a world-renowned semiconductor manufacturer, is a pioneer and market leader in SiC power devices. Since 2015 we have been actively engaged in technical exchanges and highly value ROHM’s proposed solutions encompassing devices and peripheral components. Choosing ROHM as our long-term supplier of SiC chips guarantees a stable supply for future mass production. We appreciate ROHM’s past efforts and look forward to building a long-term collaborative relationship, with this agreement serving as a new starting point.’
- Tsuguki Noma, Corporate Officer and Director of the Power Device Business Unit, ROHM
‘We are very pleased to have signed a long-term supply agreement with UAES, a valued partner with whom we have built a strong cooperative relationship over the years. As a leading Tier 1 manufacturer in China, UAES is at the forefront of advanced application development. To meet the need for SiC power devices that improve efficiency in the rapidly expanding electric vehicle market, ROHM has established a leading development and manufacturing system within the SiC industry. We believe that by working together, both companies can provide cutting-edge, high performance, high quality automotive applications. Moving forward, we will continue to drive technological innovation in electric vehicles together with UAES by offering power solutions centered on SiC.’
History of Technical Collaboration Between ROHM and UAES
- 2015 Initiated technical exchange
- 2020 Established a joint SiC technology laboratory
- 2020 Began mass production of automotive products equipped with ROHM SiC power devices
- 2021 ROHM recognized as a preferred supplier for SiC power solutions
- 2024 ROHM and UAES sign a long-term supply agreement for SiC power devices
Original – ROHM
