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Infineon Technologies announced that its CoolSiC™ MOSFETs have been adopted in Toyota’s new bZ4X model. The silicon carbide devices are integrated in the vehicle’s on-board charger (OBC) and DC/DC converter, leveraging SiC’s low-loss performance, high thermal capability and high-voltage strength to help extend driving range and reduce charging time.
“We are very proud that Toyota, one of the world’s largest automakers, has chosen Infineon’s CoolSiC technology. Silicon carbide enhances the range, efficiency and performance of electric vehicles and is therefore a very important part of the future of mobility,” said Peter Schaefer, Executive Vice President and Chief Sales Officer Automotive at Infineon. He added that Infineon’s focus on innovation and zero-defect quality supports rising demand for power electronics in electromobility.
Infineon noted that CoolSiC MOSFETs use a trench gate structure that reduces normalized on-resistance and chip size, lowering both conduction and switching losses to improve overall efficiency in automotive power systems. Optimized parasitic capacitance and gate threshold voltage also enable unipolar gate drive, which can simplify drive circuitry in the electric drivetrain while supporting high-density, high-reliability OBC and DC/DC converter designs.
Original – Infineon Technologies
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The power module equipped with ROHM Co., Ltd.’s 4th generation SiC MOSFET bare chip has been
adopted in the traction inverter of Toyota Motor Corporation’s new crossover BEV “bZ5” for the Chinese market.The “bZ5” is a crossover-type BEV jointly developed by Toyota, BYD TOYOTA EV TECHNOLOGY
Co., Ltd. (hereinafter “BTET”), FAW Toyota Motor Co., Ltd. (hereinafter “FAW Toyota”), etc., and was
launched by FAW Toyota in June 2025.The power module adopted this time has started mass production shipments from HAIMOSIC
(SHANGHAI) Co., Ltd., a joint venture between ROHM and Zhenghai Group. ROHM’s power solutions centered on SiC MOSFETs contribute to the extended range and enhanced performance of the new
BEV.ROHM aims to complete the construction of the production line for the next-generation 5th generation SiC MOSFET by 2025, and is also accelerating the market introduction plans for the 6th and 7th generations, focusing on the development of SiC power devices. ROHM will continue to work on improving device performance and production efficiency, and strengthen the system to provide SiC in
various forms such as bare chips, discrete components, and modules, promoting the spread of SiC
and contributing to the creation of a sustainable mobility society.Original – ROHM
