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iDEAL Semiconductor has announced that its proprietary SuperQ™ technology has successfully achieved AEC-Q101 automotive qualification, marking the company’s entry into high-reliability and automotive-grade power semiconductor markets.
The company’s first automotive-qualified product, the iS20M028S1CQ, is a 200 V MOSFET featuring a low 25 mΩ RDS(on) and a maximum junction temperature rating of 175°C. The device is now entering mass production.
SuperQ technology represents a major innovation in silicon MOSFET performance, delivering significantly higher efficiency, lower switching losses, and improved conduction characteristics while retaining the proven robustness and reliability of silicon. This qualification confirms SuperQ’s ability to meet the demanding standards required for automotive applications, including electric vehicle powertrains, on-board chargers, and advanced driver-assistance systems (ADAS).
The iS20M028S1CQ extends iDEAL’s 200 V product family and is housed in a compact PDFN 5×6 mm package. The device offers up to 1.7 times better performance compared to competing solutions, combining high efficiency and low resistance with compatibility for high-volume, cost-efficient manufacturing.
“This is an important milestone that builds on the ruggedness and robustness of SuperQ, opening new markets for iDEAL,” said Mark Granahan, CEO and Founder of iDEAL Semiconductor. “Automotive qualification validates our technology’s potential to drive efficiency in electrified transportation and beyond, empowering customers with more sustainable, more reliable power solutions.”
With this achievement, iDEAL strengthens its position in the power semiconductor industry, bringing advanced silicon-based innovation to applications that demand high efficiency, reliability, and performance under extreme conditions.
Original – iDEAL Semiconductor
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iDEAL Semiconductor has announced the first of its 200 V family of SuperQ™-based MOSFETs has entered mass production, with four additional 200 V devices now sampling.
SuperQ is the first major advance in silicon MOSFET technology in more than 25 years, breaking through long-standing limits in switching and conduction. It delivers a step-change in performance and efficiency while preserving the core advantages of silicon: ruggedness, high-volume manufacturability, and proven reliability at 175 °C.
The first 200 V device to reach mass production, the iS20M028S1P, is a 25 mΩ MOSFET in a TO-220 package. iDEAL’s lowest-resistance 200 V devices, now sampling in TOLL and D²PAK-7L, achieve a maximum RDS(on) of just 5.5 mΩ. This sets a new performance benchmark, delivering resistance that is 1.2x lower than the current market leader and 1.7x lower than the next-best competitor.
“By expanding SuperQ into 200 V, iDEAL is proving that silicon innovation is far from over,” said Mark Granahan, CEO and Founder of iDEAL Semiconductor. “These results show that we can deliver the lowest resistance and superior switching behavior while maintaining the manufacturability, reliability, and cost advantages of silicon. It’s a major milestone for our company and for customers looking to push efficiency forward.”
Target applications for the 200 V SuperQ family include motor drives, LED lighting, battery protection, AI servers, isolated DC/DC power modules, USB-PD adapters, and solar. With devices now in production and industry-leading samples available, iDEAL is accelerating engagement with customers across high-growth power markets.
Original – iDEAL Semiconductor
