-
iDEAL Semiconductor announced an expansion of its SuperQ 200 V MOSFET portfolio, introducing new devices that deliver industry-leading on-resistance in widely used power semiconductor packages.
The iS20M5R5S1T sets a new benchmark as the lowest RDS(on) 200 V MOSFET available in the industry-standard TOLL package, while the newly introduced iS20M6R3S1P offers the lowest RDS(on) for a 200 V MOSFET in the TO-220 package. Together, these devices provide high efficiency and design flexibility for both surface-mount and through-hole power electronics applications.
The iS20M5R5S1T achieves a maximum RDS(on) of 5.5 mΩ in a compact TOLL package, enabling higher power density and reduced conduction losses in space-constrained designs. The complementary iS20M6R3S1P provides a maximum RDS(on) of 6.3 mΩ in the TO-220 package, supporting applications that require through-hole assembly, mechanical mounting, or direct heatsinking.
iDEAL Semiconductor plans to further expand its 200 V SuperQ MOSFET lineup later in 2026 by introducing the same 5.5 mΩ performance level in additional packages, including a D2PAK-7L variant optimized for high-current surface-mount designs and a TOLT package designed for compact layouts with top-side cooling capabilities.
The SuperQ 200 V MOSFET devices are primarily targeted at demanding motor-drive applications where efficiency, robustness, and fault tolerance are critical. Key characteristics include high short-circuit withstand capability, improved device paralleling with ±0.5 V gate threshold voltage tolerance, a maximum operating temperature rating of 175 °C, and current handling capability up to 151 A in the TOLL package and 172 A in the TO-220 package. The devices are also avalanche-rated and undergo 100% unclamped inductive switching testing in production.
Beyond motor drives, the MOSFETs can be used in switched-mode power supplies, secondary-side synchronous rectification circuits, and other high-current industrial or battery-powered systems where efficiency and thermal performance are important.
The iS20M5R5S1T and iS20M6R3S1P devices are currently in volume production and available through the company’s global distribution network. Additional devices in the series are currently sampling and are expected to enter production later in 2026.
Original – iDEAL Semiconductor
-
iDEAL Semiconductor has introduced its SuperQ™ MOSFET technology, specifically engineered to address safety and efficiency challenges in high-voltage (72V and above) battery management systems (BMS). The platform sets a new industry benchmark for short-circuit withstand capability (SCWC), a critical metric for battery discharge switches.
The rising deployment of high-voltage battery systems in applications such as e-mobility, drones, and industrial power tools demands enhanced safety mechanisms against extreme short-circuit events. The discharge MOSFET plays a vital role in isolating battery packs under such high-stress conditions.
According to Dr. Phil Rutter, Vice President of Design at iDEAL Semiconductor, “Traditional MOSFETs require trade-offs between achieving low RDS(on) for efficiency and maintaining structural integrity to withstand high short-circuit currents. SuperQ™ eliminates this compromise through a proprietary cell structure that delivers both industry-low on-resistance and unmatched safety margins.”
In internal testing, the SuperQ™ iS15M2R5S1T (150V, 2.5mΩ, TOLL package) demonstrated a short-circuit withstand capability of 800A—1.4 times greater than a comparable 150V, 2.5mΩ device from a leading competitor, which withstood 580A. This performance is achieved through a wider conduction region that maximizes power density and structural resilience under extreme conditions.
The enhanced SCWC of the SuperQ™ platform enables multiple system-level advantages:
- Reduction in component count by up to 50% due to higher current handling capability
- Lower total system cost from simplified layouts and reduced material usage
- Improved efficiency through ultra-low 2.5mΩ RDS(on), decreasing power losses and thermal demands
The SuperQ™ product line is immediately available in voltage ratings up to 200V, supporting battery platforms from 72V to over 144V.
Original – iDEAL Semiconductor
-
iDEAL Semiconductor has announced that its proprietary SuperQ™ technology has successfully achieved AEC-Q101 automotive qualification, marking the company’s entry into high-reliability and automotive-grade power semiconductor markets.
The company’s first automotive-qualified product, the iS20M028S1CQ, is a 200 V MOSFET featuring a low 25 mΩ RDS(on) and a maximum junction temperature rating of 175°C. The device is now entering mass production.
SuperQ technology represents a major innovation in silicon MOSFET performance, delivering significantly higher efficiency, lower switching losses, and improved conduction characteristics while retaining the proven robustness and reliability of silicon. This qualification confirms SuperQ’s ability to meet the demanding standards required for automotive applications, including electric vehicle powertrains, on-board chargers, and advanced driver-assistance systems (ADAS).
The iS20M028S1CQ extends iDEAL’s 200 V product family and is housed in a compact PDFN 5×6 mm package. The device offers up to 1.7 times better performance compared to competing solutions, combining high efficiency and low resistance with compatibility for high-volume, cost-efficient manufacturing.
“This is an important milestone that builds on the ruggedness and robustness of SuperQ, opening new markets for iDEAL,” said Mark Granahan, CEO and Founder of iDEAL Semiconductor. “Automotive qualification validates our technology’s potential to drive efficiency in electrified transportation and beyond, empowering customers with more sustainable, more reliable power solutions.”
With this achievement, iDEAL strengthens its position in the power semiconductor industry, bringing advanced silicon-based innovation to applications that demand high efficiency, reliability, and performance under extreme conditions.
Original – iDEAL Semiconductor
-
iDEAL Semiconductor has announced the first of its 200 V family of SuperQ™-based MOSFETs has entered mass production, with four additional 200 V devices now sampling.
SuperQ is the first major advance in silicon MOSFET technology in more than 25 years, breaking through long-standing limits in switching and conduction. It delivers a step-change in performance and efficiency while preserving the core advantages of silicon: ruggedness, high-volume manufacturability, and proven reliability at 175 °C.
The first 200 V device to reach mass production, the iS20M028S1P, is a 25 mΩ MOSFET in a TO-220 package. iDEAL’s lowest-resistance 200 V devices, now sampling in TOLL and D²PAK-7L, achieve a maximum RDS(on) of just 5.5 mΩ. This sets a new performance benchmark, delivering resistance that is 1.2x lower than the current market leader and 1.7x lower than the next-best competitor.
“By expanding SuperQ into 200 V, iDEAL is proving that silicon innovation is far from over,” said Mark Granahan, CEO and Founder of iDEAL Semiconductor. “These results show that we can deliver the lowest resistance and superior switching behavior while maintaining the manufacturability, reliability, and cost advantages of silicon. It’s a major milestone for our company and for customers looking to push efficiency forward.”
Target applications for the 200 V SuperQ family include motor drives, LED lighting, battery protection, AI servers, isolated DC/DC power modules, USB-PD adapters, and solar. With devices now in production and industry-leading samples available, iDEAL is accelerating engagement with customers across high-growth power markets.
Original – iDEAL Semiconductor
