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ROHM and Schaeffler have started mass production of a new high-voltage inverter brick equipped with ROHM’s SiC (silicon carbide) MOSFET bare chips as part of their strategic partnership. The inverter brick is intended for a major Chinese car manufacturer.
The Schaeffler inverter subassembly is the essential power device building block (brick) to control the electric drive via logic signals. This is where the high-frequency current pulses are produced that set the vehicle’s electric motor in motion. The performance characteristics of the inverter brick now being produced are impressive: Schaeffler increased the output of the brick by increasing the maximum possible battery voltage to much more than the usual 800 V – and with RMS currents of up to 650 A, which turn the sub-module into a compact power pack.
“Through our strategic approach of incorporating scalability and modularity into our e-mobility solutions – from individual components to a highly integrated electric axle – we developed the readily integrated inverter brick. Based on our generic platform development, it took us just one year to bring this optimal product for the popular X-in-1 architectures to volume production readiness,” says Thomas Stierle, CEO of the E-Mobility Division at Schaeffler.
As a core component of an inverter, a brick has to meet strict requirements. The characteristics of the sub-module are indicative of the factors behind the current sales success and start of volume production: ROHM’s silicon carbide (SiC) power semiconductors enable the frame-mounted sub-module with high power density to be compact, efficient, and readily integrated into various inverters through its modular and scalable design. The sub-module incorporates the power module for pulse width modulation (PWM) of the current pulses, the DC link capacitor, a DC link and a cooler. Moreover, the brick has a DC boost function, thanks to which a vehicle with 800 V architecture can also be charged at a 400 V charging station at a charging speed of 800 V.
“We are glad about the launch of volume production for Schaeffler’s inverter brick with our 4th generation SiC MOSFET,” says Dr. Kazuhide Ino, Member of the Board and Managing Executive Officer at ROHM. “With our SiC technology we are making a substantial contribution to increasing the efficiency and performance of electric cars. Working with Schaeffler as our partner, we are thus fostering innovation and sustainability in the automotive industry,” Dr. Ino adds.
The strategic partnership of Schaeffler (originally initiated under Vitesco Technologies) with ROHM has existed since 2020 and serves to secure capacity for energy-efficient SiC power semiconductors.
Original – ROHM
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onsemi announced an expanded collaboration with leading motion technology company Schaeffler through a new design win that leverages onsemi’s next-generation EliteSiC product line of silicon carbide MOSFETs. The onsemi solution will power the Schaeffler traction inverter for a leading global automaker’s cutting-edge plug-in hybrid electric vehicle (PHEV) platform.
onsemi’s EliteSiC technology offers significantly lower conduction losses and superior short-circuit robustness, enabling a compact, thermally efficient inverter design that enhances overall system performance. This silicon carbide-based solution offers the lowest on-state resistance to provide highest peak power compared to other SiC solutions in its class. These benefits allow Schaeffler to deliver an innovative traction inverter system that achieves measurable benefits to the end customer, including:
- Longer driving range, enabled by higher energy conversion efficiency
- Enhanced reliability, for consistent operation with lower maintenance
- Optimized form factor, allowing greater flexibility in vehicle design
“The traction inverter is at the heart of every electrified drivetrain, and onsemi’s EliteSiC solution plays a vital role in achieving the efficiency and performance targets that our customer demands,” said Christopher Breitsameter, Head of Business Division Controls at Schaeffler.
As automakers increasingly prioritize energy efficiency and performance, the industry is turning to more advanced hybrid architectures even in cost-sensitive EV platforms, a market traditionally dominated by insulated-gate bipolar transistors (IGBTs). onsemi’s role as an industry leader in silicon carbide positions it at the forefront of this transition, enabling Schaeffler to deliver an EV system that meets stringent performance and packaging requirements.
“As the exclusive silicon carbide supplier for this program, onsemi continues to strengthen its position as a trusted innovation partner for leading global automotive players,” said Simon Keeton, Group President, Power Solutions Group, onsemi. “Our industry-leading silicon carbide semiconductor technology delivers unmatched efficiency, thermal performance, and power density—key enablers for next-generation electric powertrain systems not only for battery electric vehicles, but also for plug-in hybrid platforms.”
This new milestone builds on the existing long-term collaboration between onsemi and Schaeffler (formerly Vitesco Technologies), extending the companies’ multi-year collaboration and reinforcing their shared commitment to delivering high-efficiency electric mobility solutions.
Original – onsemi
