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Shin-Etsu Chemical Co., Ltd. has announced a major development milestone for its QST™ substrate—a 300-mm GaN growth substrate—achieved through collaboration with IMEC.
The 300-mm QST™ substrate was adopted in IMEC’s recently launched 300-mm GaN power device development program. In initial evaluations, a 5 µm-thick HEMT (High Electron Mobility Transistor) structure fabricated on Shin-Etsu’s QST™ substrate demonstrated a record-breaking voltage resistance exceeding 800 V. This represents the highest breakdown voltage ever achieved on a 300-mm GaN substrate that complies with SEMI standards and confirms the substrate’s outstanding in-plane uniformity and crystal quality.
The QST™ substrate was developed by QROMIS, Inc., based in California, and licensed to Shin-Etsu Chemical. Shin-Etsu manufactures 150-mm, 200-mm, and 300-mm QST™ substrates, as well as GaN-on-QST™ epitaxial wafers. In September 2024, the company began offering 300-mm QST™ sample substrates in collaboration with QROMIS, strengthening its commitment to advancing large-diameter GaN manufacturing.
This partnership has enabled Shin-Etsu to supply QST™ substrates for IMEC’s CMOS-based 300-mm GaN fab. The joint program aims to develop both 650 V-rated and future 1200 V+ GaN power devices targeted for high-performance applications, including AI data centers, automotive systems, and industrial power electronics.
The QST™ substrate’s thermal expansion coefficient is closely matched to GaN, which facilitates stable crystal growth and reduces challenges such as wafer warpage that typically hinder high-yield GaN growth on silicon at larger diameters. By solving these limitations, the QST™ platform allows for the cost-effective production of thick-film GaN devices on 300-mm wafers—a key factor in scaling next-generation power semiconductors.
Manufacturing was carried out using Aixtron’s Hyperion MOCVD equipment, which enabled the precise deposition of the HEMT structure during testing. The results confirmed superior yield potential and mechanical integrity at the 300-mm scale, marking a crucial step toward practical large-scale manufacturing of GaN power devices.
Shin-Etsu is currently preparing for mass production of 300-mm QST™ substrates and has already enhanced its facilities for 150-mm and 200-mm variants. The QST™ substrate lineup, ranging from 150 mm to 300 mm, is being evaluated by domestic and international partners for applications in power conversion, RF, and LED markets, particularly in light of growing demand for high-efficiency systems in data centers and electric vehicles.
With its scalable GaN technology, Shin-Etsu aims to accelerate the adoption of GaN devices and support the shift toward more sustainable and energy-efficient technologies across the global electronics industry.
Original – Shin-Etsu Chemical
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Imec, the Belgian research and innovation hub specializing in nanoelectronics and digital technologies, has announced the launch of a new 300mm gallium nitride (GaN) open innovation program for power electronics. AIXTRON, GlobalFoundries, KLA Corporation, Synopsys, and Veeco have joined as the first partners in this initiative, which aims to accelerate the development of both low- and high-voltage GaN power devices.
The program, part of imec’s Industrial Affiliation Program (IIAP) on GaN power electronics, focuses on advancing 300mm GaN epitaxial growth and high electron mobility transistor (HEMT) process flows. The use of larger 300mm substrates is expected to lower GaN device manufacturing costs while enabling more advanced, high-performance power electronics such as compact, energy-efficient converters for CPUs and GPUs.
Imec’s new initiative builds on the success of 200mm GaN technology, extending its expertise to larger wafer diameters to support industrial-scale production. The move to 300mm wafers allows GaN technology to access state-of-the-art CMOS-compatible equipment, paving the way for the next generation of low-voltage p-GaN gate HEMTs for power distribution in computing and data applications.
The program’s first phase will establish a baseline lateral p-GaN HEMT platform for low-voltage applications (100 V and beyond), using 300mm Si(111) substrates. Development work currently focuses on key process modules such as p-GaN etching and Ohmic contact formation. Later stages will target high-voltage applications above 650 V, utilizing 300mm QST engineered substrates that offer mechanical strength and bow control suitable for advanced CMOS-compatible processing.
According to Stefaan Decoutere, fellow and program director of GaN power electronics at imec, the transition to 300mm wafers offers advantages beyond cost reduction. It enables the creation of more sophisticated GaN devices, supporting compact and efficient power solutions for applications like automotive on-board chargers, solar inverters, and power systems in telecom and AI data centers.
Imec expects to complete installation of its full 300mm GaN processing capabilities in its cleanroom by the end of 2025. The program’s success relies on strong collaboration between partners across the value chain, combining expertise in epitaxy, process integration, design, and packaging to drive the next wave of GaN power innovation.
Original – Imec
