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iDEAL Semiconductor has announced that its proprietary SuperQ™ technology has successfully achieved AEC-Q101 automotive qualification, marking the company’s entry into high-reliability and automotive-grade power semiconductor markets.
The company’s first automotive-qualified product, the iS20M028S1CQ, is a 200 V MOSFET featuring a low 25 mΩ RDS(on) and a maximum junction temperature rating of 175°C. The device is now entering mass production.
SuperQ technology represents a major innovation in silicon MOSFET performance, delivering significantly higher efficiency, lower switching losses, and improved conduction characteristics while retaining the proven robustness and reliability of silicon. This qualification confirms SuperQ’s ability to meet the demanding standards required for automotive applications, including electric vehicle powertrains, on-board chargers, and advanced driver-assistance systems (ADAS).
The iS20M028S1CQ extends iDEAL’s 200 V product family and is housed in a compact PDFN 5×6 mm package. The device offers up to 1.7 times better performance compared to competing solutions, combining high efficiency and low resistance with compatibility for high-volume, cost-efficient manufacturing.
“This is an important milestone that builds on the ruggedness and robustness of SuperQ, opening new markets for iDEAL,” said Mark Granahan, CEO and Founder of iDEAL Semiconductor. “Automotive qualification validates our technology’s potential to drive efficiency in electrified transportation and beyond, empowering customers with more sustainable, more reliable power solutions.”
With this achievement, iDEAL strengthens its position in the power semiconductor industry, bringing advanced silicon-based innovation to applications that demand high efficiency, reliability, and performance under extreme conditions.
Original – iDEAL Semiconductor
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iDEAL Semiconductor confirms that its ultra-efficient SuperQ™ silicon power devices are now in production at Polar Semiconductor, a leading foundry specializing in high-voltage, power, and sensor technologies.
SuperQ represents the first major innovation in silicon MOSFET architecture in over 25 years. Leveraging a patented asymmetrical RESURF structure, it significantly reduces conduction and switching losses – with up to 2.7x lower resistance compared to legacy silicon and cutting switching losses by up to 2.1x versus competing devices.
Polar Semiconductor operates a high-volume 200mm manufacturing facility in Minnesota and is the only majority U.S.-owned foundry with deep expertise in high-voltage and power semiconductors. With a 50-year heritage in automotive production, Polar is IATF 16949 certified and committed to zero-defect manufacturing. iDEAL’s first products – 150 V and 200 V MOSFETs announced in July – are already in production at Polar, with 300 V and 400 V devices to follow.
Polar is further expanding to double its manufacturing capacity and invest in next-generation technologies to support strategic customers like iDEAL. This enhances Polar’s global competitiveness and reflects the growing demand for domestic manufacturing of advanced power and sensor technologies.
“Polar is among the world’s top-tier power semiconductor foundries,” said Mark Granahan, CEO and co-founder of iDEAL Semiconductor. “Their advanced manufacturing capabilities, focus on high-voltage processes, partnership mindset, and investment in future capacity make them an ideal choice to support our SuperQ roadmap.”
“Polar continues to invest in cutting-edge technologies, and we’re excited to collaborate with iDEAL to bring these SuperQ-based devices to market,” said Surya Iyer, President and COO of Polar Semiconductor. “Together, we’re enabling the next leap in power efficiency and performance while ensuring a secure and scalable manufacturing platform.”
SuperQ delivers ultra-low conduction and switching losses while maintaining the ruggedness and manufacturability of silicon – including proven reliability at 175°C junction temperatures. The platform is purpose-built for high-performance applications across industrial automation, automotive electrification, AI datacenters, renewable energy, telecom infrastructure, and consumer power systems.
Original – iDEAL Semiconductor
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iDEAL Semiconductor has announced the first of its 200 V family of SuperQ™-based MOSFETs has entered mass production, with four additional 200 V devices now sampling.
SuperQ is the first major advance in silicon MOSFET technology in more than 25 years, breaking through long-standing limits in switching and conduction. It delivers a step-change in performance and efficiency while preserving the core advantages of silicon: ruggedness, high-volume manufacturability, and proven reliability at 175 °C.
The first 200 V device to reach mass production, the iS20M028S1P, is a 25 mΩ MOSFET in a TO-220 package. iDEAL’s lowest-resistance 200 V devices, now sampling in TOLL and D²PAK-7L, achieve a maximum RDS(on) of just 5.5 mΩ. This sets a new performance benchmark, delivering resistance that is 1.2x lower than the current market leader and 1.7x lower than the next-best competitor.
“By expanding SuperQ into 200 V, iDEAL is proving that silicon innovation is far from over,” said Mark Granahan, CEO and Founder of iDEAL Semiconductor. “These results show that we can deliver the lowest resistance and superior switching behavior while maintaining the manufacturability, reliability, and cost advantages of silicon. It’s a major milestone for our company and for customers looking to push efficiency forward.”
Target applications for the 200 V SuperQ family include motor drives, LED lighting, battery protection, AI servers, isolated DC/DC power modules, USB-PD adapters, and solar. With devices now in production and industry-leading samples available, iDEAL is accelerating engagement with customers across high-growth power markets.
Original – iDEAL Semiconductor
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iDEAL Semiconductor announced it will partner with Power and RF specialist, Richardson Electronics.
Under the agreement, iDEAL will gain access to Richardson Electronics’ design teams and sales specialists to expand the reach of its ultra-efficient, high-performance power MOSFETs, which are based on the company’s novel, patented, state-of-the-art SuperQ technology.
SuperQ is the first significant advance in silicon technology this century. It delivers up to 5.7x lower resistance and up to 2.1x lower switching loss than leading competitors. This enables power engineers to meet the demands of modern power systems while keeping the reliability, cost-effectiveness, and supply chain robustness of silicon.
The agreement follows iDEAL’s launch of its first SuperQ-based products, a series of 150 V MOSFETS, and the sampling of a family of 200 V MOSFETs. These offer leading figures of merit (FOM) including the industry’s lowest resistance, switching charge (QSW) and output capacitance energy (EOSS) and are available immediately.
iDEAL’s initial devices target hard-switching, motor-control and synchronous-rectification applications including AI servers, USB power delivery, motor drives and AC/DC and DC/DC conversion.
Mark Granahan, CEO and co-founder of iDEAL Semiconductor said: “Innovation in silicon power semiconductors has slowed, with much of the industry shifting focus to alternative materials. SuperQ proves there’s still room to push silicon far beyond what was thought possible. We’re thrilled to partner with Richardson Electronics – their deep expertise in power electronics makes them an ideal collaborator to bring SuperQ’s disruptive benefits to more customers worldwide.”
Greg Peloquin, Executive Vice President of Power & Microwave Technologies of Richardson Electronics said: “The SuperQ structure marks a significant breakthrough in the power sector, and we’re delighted to be representing iDEAL. As a specialist in power, Richardson’s team is uniquely positioned to help power engineers meet the ever-more-stringent demands being placed on them, and SuperQ will be a key component in solving their challenges.”
Original – iDEAL Semiconductor
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iDEAL Semiconductor announced the signing of a global distribution agreement with Mouser Electronics. The agreement is for iDEAL’s power devices, which are based on the company’s novel, patented, state-of-the-art SuperQ technology.
SuperQ delivers significant efficiency and performance gains versus legacy Superjunction architectures, enabling power engineers to meet the demands of modern power systems while keeping the reliability, cost-effectiveness, and supply chain robustness of silicon.
The agreement follows news of the first SuperQ-based products entering mass production, with 150 V MOSFETS available immediately. These offer leading RDS(on) and figures of merit (FOM) including the industry’s lowest switching charge (QSW) and output capacitance energy (EOSS).
iDEAL’s initial devices target hard-switching, motor-control and synchronous-rectification applications including AI servers, USB power delivery, motor drives and AC/DC and DC/DC conversion.
Mark Granahan, CEO and co-founder of iDEAL Semiconductor said: “Innovation in silicon power semiconductors has stalled for more than a decade, with much of the industry betting on alternative materials. SuperQ upends that trend – delivering unprecedented performance gains from a familiar, scalable, and cost-effective platform. This is the future of silicon, not the end.”
Kristin Schuetter, Senior Vice President of Products at Mouser Electronics said: “SuperQ represents a huge leap forward in what’s possible with silicon power devices. Mouser has an exceptional track record within this sector and this breakthrough will be extremely valuable to our power engineering customer base.”
Original – iDEAL Semiconductor
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iDEAL Semiconductor’s SuperQ™ technology has entered full production, with the first products being 150 V MOSFETs. A family of 200 V MOSFETs is sampling.
SuperQ is the first significant advance in silicon MOSFET design in more than a quarter of a century and delivers unmatched performance and efficiency in silicon power devices. The architecture breaks through silicon’s fundamental switching and conduction barriers. It almost doubles the n-conduction region (up to 95%) and reduces switching losses by up to 2.1x versus competing devices.
The structure also improves resistance and power losses while maintaining the benefits of silicon, including its ruggedness, high-volume manufacturability, and proven reliability at 175°C junction rating.
The first product in iDEAL’s 150 V MOSFET series, iS15M7R1S1C, is a 6.4 mΩ MOSFET. It is available immediately in a 5 x 6 mm PDFN package. The SMT package includes exposed leads to simplify assembly and improve board level reliability.
The 200 V family includes the iS20M6R1S1T, a 6.1 mΩ MOSFET in a 11.5 x 9.7 mm TOLL package. This has an RDSon of 6.1 mΩ, which is 10% lower than the current industry leader and 36% lower than the next best competitor. The company is also sampling 200 V MOSFETs in TOLL, TO-220, D2PAK-7L and PDFN packages.
300 V and 400 V MOSFET platforms are coming soon—voltage classes underserved by today’s silicon technologies. iDEAL’s upcoming devices are designed to deliver dramatically lower resistance than existing solutions, opening new possibilities for efficiency and performance.
“For the past quarter-century, the industry has relied on Reduced Surface Field (RESURF) technologies like Superjunction, but these architectures’ performance has plateaued. To achieve the necessary gains in power delivery and efficiency, a new architecture is required and that is SuperQ,” said Mark Granahan, CEO and co-founder of iDEAL Semiconductor.
“The demand for higher performing power solutions has never been greater. SuperQ will enable emerging critical applications ranging from industrial automation, AI data center and the world’s electrification trends. Today iDEAL is announcing new levels of cost times performance for the designer’s toolbox at 150V – 400V that simply didn’t exist.”
This innovation is designed for MOSFETs, IGBTs, diodes, power ICs, and even future semiconductor materials, positioning SuperQ as a foundational technology for the next era of power electronics.
iDEAL’s silicon power devices are invented, engineered and fabricated in the United States. They are available in a wide range of industry-standard, drop-in compatible packages, including TO-220, ITO-220, TO-247, D2PAK-3L, D2PAK-7L, DPAK, TOLL, TOLT, and PDFN 5×6. The products are designed for a broad voltage and application spectrum.
Original – iDEAL Semiconductor
