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onsemi announced an extension of its long-standing strategic engagement with FORVIA HELLA, with the adoption of onsemi’s PowerTrench® T10 MOSFET technology across FORVIA HELLA’s advanced automotive platforms. The new long-term agreement deepens the companies’ collaboration and positions them to deliver innovative solutions through the next decade of automotive transformation.
PowerTrench® T10 MOSFET technology combines ultra-low conduction and switching losses to raise efficiency and power density in compact footprints while maintaining high reliability. The shielded gate power trench architecture reduces output capacitance and improves key figures of merit via lower drain-to-source resistance and gate charge—enablers for more efficient, cost-effective designs across a wide range of automotive applications. T10 power MOSFETs are manufactured at onsemi’s state-of-the-art facility in East Fishkill, NY.
“onsemi’s next-generation MOSFETs are a key enabler for our advanced automotive platforms. This collaboration allows us to offer our customers future-proof solutions with greater efficiency and reliability, supporting electrification and delivering innovative, cost-effective solutions that meet the demands of modern automotive systems,” said Sven Hoenecke, Executive Vice President, Purchasing, FORVIA HELLA.
“This extension underscores the strength of our 25-year collaboration with FORVIA HELLA and highlights the trust they place in onsemi to deliver next-generation power solutions. The integration of the T10 power MOSFETs will help enable the future of electrified and software-defined vehicles, where efficiency, performance, and scalability are critical,” said Simon Keeton, Group President, Power Solutions Group, onsemi.
As vehicle electrification accelerates and demand grows for higher-performing, compact and cost-effective power systems, the collaboration underscores the central role of power semiconductors in next-generation automotive architectures. By combining onsemi’s intelligent power portfolio with FORVIA HELLA’s systems expertise, the companies are addressing the rising electrical demands of automated driving, safety and electrification.
Original – onsemi
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FORVIA HELLA, an international automotive supplier, has selected the new CoolSiC™ Automotive MOSFET 1200 V from Infineon Technologies AG for its next generation 800 V DCDC charging solution. Designed for on-board charger and DCDC applications in 800 V automotive architectures, Infineon’s CoolSiC MOSFET comes in a Q-DPAK package. The device uses top-side cooling (TSC) technology, which enables excellent thermal performance, easier assembly and lower system costs.
“We are excited to continue our partnership with FORVIA HELLA, leveraging our high-efficiency SiC products based on TSC packages,” said Robert Hermann, Vice President of Automotive High-Voltage Chips and Discretes at Infineon. “We are continuously working to take e-mobility to the next level by providing state-of-the-art SiC solutions that meet the automotive industry’s stringent requirements for performance, quality, and system cost.”
“Our customers are at the center of our efforts. That is why we have chosen Infineon’s CoolSiC Automotive MOSFET 1200 V for our next generation of DCDC converters”, said Guido Schütte, Member of the Electronics Executive Board at FORVIA HELLA. “Together with Infineon, we will continue to offer sustainable and innovative products and comprehensive services that exceed our customers’ expectations and drive the development of advanced mobility.”
Infineon’s new CoolSiC Automotive MOSFET 1200 V in the Q-DPAK package is based on Gen1p technology and offers a drive voltage in the range of V GS(off)= 0 V and V GS(on)= 20 V. The 0 V turn-off enables unipolar gate control, which simplifies design by reducing the number of components in the PCB.
With a creepage distance of 4.8 mm, the package achieves an operating voltage of over 900 V without the need for additional insulation coating. Compared to backside cooling, the TSC technology ensures optimized PCB assembly, reducing parasitic effects and resulting in significantly lower leakage inductances. As a result, customers benefit from lower package parasitics and lower switching losses. Heat dissipation is further improved by diffusion soldering the chip with .XT technology.
Original – Infineon Technologies
