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Infineon Technologies AG introduced the EiceDRIVER™ Power 2EP1xxR family of full-bridge transformer drivers for IGBT, SiC and GaN gate driver power supplies. With the 2EP1xxR family, Infineon extends its portfolio of power devices to provide designers with a solution for isolated gate driver supply.
By using the devices, asymmetrical output voltages can be implemented to supply isolated gate drivers in a cost-effective and space-saving manner. This makes the 2EP1xxR particularly suitable for industrial or consumer applications requiring isolated gate drivers, including solar applications, electric vehicle charging, energy storage systems, welding, uninterruptible power supplies and drive applications.
The 2EP1xxR family comes in a compact TSSOP8 pin package with power integration and optimizations to generate an asymmetric output voltage. The family is optimized for asymmetric gate driver supply through its unique duty-cycle adjustment capability. The devices support a wide input voltage range up to 20 V. They also offer integrated temperature, short-circuit and undervoltage lockout (UVLO) protection to prevent unwanted system faults.
The 2EP1xxR family is available in the following four product variants: 2EP100R and 2EP101R are optimized for low component count designs for IGBT and SiC MOSFET gate driver power supplies. 2EP110R allows fine adjustment of the duty-cycle to match the output voltage ratio to the application requirements of SiC and GaN power switches. 2EP130R is optimized for highly flexible designs to meet different application requirements.
The device offers 5-stage overcurrent protection, 41 selectable switching frequencies or synchronization with external PWM for transformer matching, and 41 selectable duty-cycle options to adjust the output voltage.
Original – Infineon Technologies
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In battery-powered applications such as motor drives and switched-mode power supplies (SMPS), the power supply architecture often requires that a module can be disconnected from the main supply rail when a fault occurs in that module. To achieve this functionality, it is common to use high-side disconnect switches (e.g. MOSFETs) to prevent a load short circuit from affecting the battery.
Infineon Technologies AG introduced the EiceDRIVER™ 1EDL8011, a high-side gate driver designed to protect battery-powered applications such as cordless power tools, robotics, e-bikes, and vacuum cleaners in the event of a fault.
The device provides fast turn-on and turn-off of high-side N-channel MOSFETs with its high gate current capabilities. It consists of an integrated charge pump with an external capacitor to provide strong start-up. The internal charge pump provides the MOSFET gate voltage when the operating input voltage is low. The gate driver IC manages inrush current and provides fault protection. Undervoltage Lockout (UVLO) protection at input voltage prevents the device from operating under hazardous conditions. The driver is available in a DSO-8 package, making it ideal for space-constrained designs. It includes overcurrent protection (OCP), adjustable current setting threshold, time delay and a safe start-up mechanism with flexible blanking during MOSFET turn-on transitions.
The 1EDL8011 has a wide operating voltage range of 8 V to 125 V and a high gate sinking current of up to 1 A, allowing for efficient switching. Additionally, the product has an extremely low off-mode quiescent current of 1 µA, helping to minimize power consumption in sleep mode. The device also includes a V DS sense feature that is used to trigger an overcurrent shutdown by monitoring the drain-to-source voltage of the disconnect MOSFET.
Infineon will be showcasing a demo featuring the 1EDL8011 at its global technology forum OktoberTech™ 2024 in Silicon Valley on 17 October. The 1EDL8011 is available now. Further information can be found at www.infineon.com/1edl8011.
Original – Infineon Technologies
