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Infineon Technologies AG introduced the EiceDRIVER™ 1ED301xMC12I family, a series of high-performance isolated gate driver ICs featuring an opto-emulator input. The devices are pin-compatible with existing opto-emulators and optocouplers and are designed to deliver higher common-mode transient immunity (CMTI), a robust output stage, and more accurate timing than typical opto-based solutions. This allows engineers to migrate to SiC technology while keeping established opto-based control schemes and avoiding a redesign.
The 1ED301xMC12I portfolio includes three variants—1ED3010, 1ED3011 and 1ED3012—covering Si MOSFET, IGBT and SiC MOSFET use cases. Each device provides up to 6.5 A output current, supporting power modules and parallel switch configurations. The ICs are offered in a CTI 600 6-pin DSO package with more than 8 mm creepage and clearance. Insulation is certified to UL 1577 and is pending certification to IEC 60747-17.
For switching precision and robustness, the opto-emulator interface uses a two-pin input designed for high noise immunity. The family specifies CMTI greater than 300 kV/µs, a propagation delay of 40 ns, and timing matching below 10 ns to support consistent high-speed switching behavior. A pure PMOS sourcing stage is included to improve turn-on performance.
The 1ED3010MC12I, 1ED3011MC12I and 1ED3012MC12I are available now through Infineon and its distribution partners. Infineon also offers the EVAL-1ED3012MC12I-SIC evaluation board to simplify testing with Infineon switches.
Original – Infineon Technologies
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Infineon Technologies AG introduced new isolated gate driver ICs for electric vehicles to enhance its EiceDRIVER™ family. The devices are designed for the latest IGBT and SiC technologies. Furthermore, they support Infineon’s new HybridPACK™ Drive G2 Fusion module, the first plug’n’play power module that implements a combination of Infineon’s silicon and silicon carbide (SiC) technologies.
The pre-configured third-generation EiceDRIVER products, 1EDI302xAS (IGBT) and 1EDI303xAS (SiC/ Fusion), are AEC-qualified and ISO 26262-compliant, ideal for traction inverters in cost-effective and high-performant xEV platforms.
The devices 1EDI3025AS, 1EDI3026AS and 1EDI3035AS provide a strong output stage of 20 A and drive high-performance inverters of all power classes up to over 300 kW. The variants 1EDI3028AS and 1EDI3038AS with an output stage of 15 A are ideal for use in entry-level battery electric vehicle (BEV) and plug-in hybrid electric vehicle (PHEV) inverters as well as for the excitation circuit of externally excited synchronous machines (EESM). In addition, the devices are equipped with the new tunable soft-off feature, which provides excellent short-circuit performance to support the latest SiC and IGBT technologies.
Various monitoring functions, such as an integrated self-test for desaturation protection (DESAT) and overcurrent protection (OCP), improve the handling of latent system errors while the new primary and secondary safe-state interface enables versatile system safety concepts. In addition, a continuously sampling 12-bit delta-sigma ADC with integrated current source can read the voltage directly from temperature measurement diodes or an NTC.
The gate drivers also provide reinforced insulation according to VDE 0884-17:2021-10 to enable safe isolation following standardized qualification and production testing procedures. Furthermore, the compact package (PG-DSO-20) and excellent compatibility with the latest power stage technologies help customers to drive system integration and reduce design cycle times.
Original – Infineon Technologies
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Infineon Technologies AG introduced the EiceDRIVER™ Power 2EP1xxR family of full-bridge transformer drivers for IGBT, SiC and GaN gate driver power supplies. With the 2EP1xxR family, Infineon extends its portfolio of power devices to provide designers with a solution for isolated gate driver supply.
By using the devices, asymmetrical output voltages can be implemented to supply isolated gate drivers in a cost-effective and space-saving manner. This makes the 2EP1xxR particularly suitable for industrial or consumer applications requiring isolated gate drivers, including solar applications, electric vehicle charging, energy storage systems, welding, uninterruptible power supplies and drive applications.
The 2EP1xxR family comes in a compact TSSOP8 pin package with power integration and optimizations to generate an asymmetric output voltage. The family is optimized for asymmetric gate driver supply through its unique duty-cycle adjustment capability. The devices support a wide input voltage range up to 20 V. They also offer integrated temperature, short-circuit and undervoltage lockout (UVLO) protection to prevent unwanted system faults.
The 2EP1xxR family is available in the following four product variants: 2EP100R and 2EP101R are optimized for low component count designs for IGBT and SiC MOSFET gate driver power supplies. 2EP110R allows fine adjustment of the duty-cycle to match the output voltage ratio to the application requirements of SiC and GaN power switches. 2EP130R is optimized for highly flexible designs to meet different application requirements.
The device offers 5-stage overcurrent protection, 41 selectable switching frequencies or synchronization with external PWM for transformer matching, and 41 selectable duty-cycle options to adjust the output voltage.
Original – Infineon Technologies
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In battery-powered applications such as motor drives and switched-mode power supplies (SMPS), the power supply architecture often requires that a module can be disconnected from the main supply rail when a fault occurs in that module. To achieve this functionality, it is common to use high-side disconnect switches (e.g. MOSFETs) to prevent a load short circuit from affecting the battery.
Infineon Technologies AG introduced the EiceDRIVER™ 1EDL8011, a high-side gate driver designed to protect battery-powered applications such as cordless power tools, robotics, e-bikes, and vacuum cleaners in the event of a fault.
The device provides fast turn-on and turn-off of high-side N-channel MOSFETs with its high gate current capabilities. It consists of an integrated charge pump with an external capacitor to provide strong start-up. The internal charge pump provides the MOSFET gate voltage when the operating input voltage is low. The gate driver IC manages inrush current and provides fault protection. Undervoltage Lockout (UVLO) protection at input voltage prevents the device from operating under hazardous conditions. The driver is available in a DSO-8 package, making it ideal for space-constrained designs. It includes overcurrent protection (OCP), adjustable current setting threshold, time delay and a safe start-up mechanism with flexible blanking during MOSFET turn-on transitions.
The 1EDL8011 has a wide operating voltage range of 8 V to 125 V and a high gate sinking current of up to 1 A, allowing for efficient switching. Additionally, the product has an extremely low off-mode quiescent current of 1 µA, helping to minimize power consumption in sleep mode. The device also includes a V DS sense feature that is used to trigger an overcurrent shutdown by monitoring the drain-to-source voltage of the disconnect MOSFET.
Infineon will be showcasing a demo featuring the 1EDL8011 at its global technology forum OktoberTech™ 2024 in Silicon Valley on 17 October. The 1EDL8011 is available now. Further information can be found at www.infineon.com/1edl8011.
Original – Infineon Technologies
