EcoSiC™ Tag Archive

  • ROHM Unveils 5th-Generation SiC MOSFETs for EVs, AI Data Centers, and Industrial Power

    ROHM Unveils 5th-Generation SiC MOSFETs for EVs, AI Data Centers, and Industrial Power

    2 Min Read

    ROHM Co., Ltd. has developed its 5th-generation EcoSiC™ MOSFETs, targeting improved efficiency and performance in high-power applications such as electric vehicles, AI data centers, and industrial power systems.

    The new generation delivers a significant performance improvement over previous devices, with approximately 30% lower ON-resistance at high temperatures (175°C) compared to 4th-generation SiC MOSFETs under similar conditions. This reduction directly translates into lower conduction losses, enabling higher efficiency, increased power density, and more compact system designs—particularly critical for traction inverters and high-performance power supplies.

    The technology is positioned to address two major market drivers. In automotive, it supports longer EV driving range and faster charging through more efficient inverters and onboard chargers. In parallel, the rapid expansion of AI infrastructure and data centers is increasing power density requirements, making efficient power conversion a key bottleneck for system scalability.

    ROHM has a long-standing position in SiC, having started mass production as early as 2010. Its 4th-generation devices have already seen broad adoption across automotive and industrial markets. The 5th-generation platform builds on this foundation with structural and process optimizations that enhance high-temperature performance—an increasingly important factor as power systems operate under more demanding conditions.

    Commercially, ROHM began offering bare die versions in 2025 and completed development in March 2026. Sampling of discrete devices and modules based on the new generation is scheduled to begin in July 2026, with further expansion planned across voltage classes and packaging options.

    From a market perspective, this launch reinforces the transition of silicon carbide into a mainstream power semiconductor technology. As electrification and AI-driven power demand accelerate, improvements in efficiency and thermal performance at the device level are becoming critical enablers for next-generation systems. ROHM’s latest generation strengthens its competitive positioning in the increasingly crowded SiC landscape, where performance gains at high temperature and high power are key differentiators.

    Original – ROHM

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  • ROHM Begins Online Sales of New SiC Power Modules

    ROHM Begins Online Sales of New SiC Power Modules

    2 Min Read

    ROHM announced the start of online sales for new silicon carbide molded modules, including the TRCDRIVE pack™, HSDIP20 and DOT-247 series. The new modules are designed to promote wider adoption of high-efficiency SiC-based power conversion technologies as global demand for energy-efficient power systems continues to grow.

    The products are available for online purchase through distributors such as DigiKey and Farnell.

    The TRCDRIVE pack™ is a 2-in-1 SiC molded module designed for traction inverters in electric vehicles with power levels up to 300 kW. It integrates ROHM’s fourth-generation SiC MOSFETs with low on-resistance, enabling approximately 1.5× higher power density compared with conventional SiC molded modules. The module also features a terminal layout that allows the gate driver board to be connected from the top, simplifying assembly and reducing installation time. Example applications include xEV traction inverters.

    The HSDIP20 module is available in 4-in-1 and 6-in-1 configurations and targets applications such as xEV onboard chargers, EV charging stations, server power supplies and AC servo systems. The lineup includes six models rated at 750 V and seven models rated at 1200 V. The modules integrate the essential power conversion circuits into a compact package, reducing design complexity and enabling smaller power conversion systems.

    The DOT-247 module is a 2-in-1 SiC module designed primarily for industrial applications such as photovoltaic inverters and uninterruptible power supply systems. It retains the versatility of the widely used TO-247 package while delivering higher power density. The module supports both half-bridge and common-source circuit configurations and helps reduce component count and PCB area in power conversion circuits.

    Applications for the new SiC modules include electric vehicle systems such as onboard chargers, DC-DC converters and electric compressors, as well as industrial equipment including EV charging stations, V2X systems, PV inverters, power conditioners and AI data center power systems.

    Original – ROHM

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