EasyPACK™ Tag Archive

  • Infineon Technologies Introduces EasyPACK C SiC Modules to Boost Efficiency and Lifetime in Demanding Industrial Power

    Infineon Technologies Introduces EasyPACK™ C SiC Modules to Boost Efficiency and Lifetime in Demanding Industrial Power

    2 Min Read

    Infineon Technologies announced EasyPACK™ C, the next generation of its EasyPACK power module family, targeting high-stress industrial applications including fast DC and megawatt EV charging, energy storage systems, and uninterruptible power supplies. The first devices in the new package integrate CoolSiC MOSFETs 1200 V G2 with Infineon’s .XT interconnection technology to deliver higher efficiency, stronger power-cycling performance, and longer service life under fluctuating load profiles.

    According to Infineon, designs based on CoolSiC MOSFET G2 in EasyPACK C can achieve more than 30 percent higher power density and up to 20 times longer lifetime compared with prior-generation CoolSiC devices. The second-generation MOSFETs also provide an approximate 25 percent reduction in RDS(on), helping to cut conduction losses and improve thermal headroom at elevated operating currents.

    The new housing concept supports higher power density and greater layout flexibility, and it is engineered with a roadmap toward future, higher-voltage classes. The inclusion of .XT interconnection is intended to further extend device lifetime by reducing thermal resistance and improving reliability under rigorous cycling.

    EasyPACK C has been engineered for harsh thermal conditions. The modules withstand overload switching up to a junction temperature Tvj(over) of 200°C and support continuous operation up to Tvj(op) of 175°C, aided by a new plastic material and silicone gel system. An updated PressFIT pin design doubles current capacity per pin, lowers PCB-level temperatures, and streamlines assembly. Electrical isolation is rated at 3 kV AC for one minute.

    The portfolio launches with multiple topologies, including three-level and H-bridge configurations, and is available with or without integrated thermal interface material to align with different cooling strategies and manufacturing flows.

    Initial modules featuring CoolSiC MOSFET G2 in EasyPACK C are available now, with further additions planned to serve a broader range of industrial power architectures.

    Original – Infineon Technologies

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  • Infineon Technologies Unveils EasyPACK™ CoolGaN™ 650V Power Module to Meet Surging Demand from AI Data Centers, EV Charging, and Renewable Energy Systems

    Infineon Technologies Unveils EasyPACK™ CoolGaN™ 650V Power Module to Meet Surging Demand from AI Data Centers, EV Charging, and Renewable Energy Systems

    4 Min Read

    With the rapid growth of AI data centers, the increasing adoption of electric vehicles, and the ongoing trends in global digitalization and reindustrialization, global electricity demand is expected to surge. To address this challenge, Infineon Technologies AG is introducing the EasyPACK™ CoolGaN™ Transistor 650 V module, adding to its growing GaN power portfolio.

    Based on the Easy Power Module platform, the module has been specifically developed for high-power applications such as data centers, renewable energy systems, and DC electric vehicle charging stations. It is designed to meet the growing demand for higher performance while providing maximum ease of use, helping customers accelerate their design processes, and shorten time-to-market.

    “The CoolGaN-based EasyPACK power modules combine Infineon’s expertise in power semiconductors and power modules,” says Roland Ott, Senior Vice President and Head of the Green Energy Modules and Systems Business Unit at Infineon. “This combination offers customers a solution that meets the increasing demand for high-performance and energy-efficient technologies in applications such as data centers, renewable energy, and EV charging.”

    The EasyPACK CoolGaN module integrates 650 V CoolGaN power semiconductors with low parasitic inductances, achieved through compact die packing – enabling fast and efficient switching. Delivering up to 70 kW per phase with just a single module, the design supports compact and scalable high-power systems. Furthermore, by combining Infineon’s .XT interconnect technology with CoolGaN options, the module enhances both performance and reliability.

    The .XT technology is implemented on a high-performance substrate, significantly reducing thermal resistance, which in turn translates to higher system efficiency and lower cooling demands. This results in increased power density and excellent cycling robustness, even under demanding operating conditions. With support for a broad range of topologies and customization options, the EasyPACK CoolGaN module addresses diverse requirements in industrial and energy applications.

    Infineon has sold well over 70 million EasyPACK modules with various chipsets for a wide range of industrial and automotive applications. With the introduction of the CoolGaN power semiconductors in this package, Infineon is now expanding the application range of GaN as its use creates more demand into very high kilowatt applications.

    The EasyPACK series leverages Infineon’s PressFIT contact technology, which ensures highly reliable and durable electrical connections between the module and the PCB. By utilizing a cold-welding process, PressFIT delivers gas-tight, solder-free joints that guarantee long-term mechanical stability and electrical conductivity, even under demanding thermal and mechanical conditions. This advanced design reduces manufacturing time and eliminates potential solder-related defects, offering a robust solution for high-reliability applications. Additionally, with its compact design, EasyPACK modules occupy up to 30 percent less PCB surface area than other conventional discrete layouts, resulting in a very cost-effective solution.

    The newest 650 V CoolGaN generation provides increased performance and figures of merit. Infineon’s benchmark data shows that CoolGaN Transistor 650 V G5 products provide up to 50 percent lower energy stored in the output capacitance (E oss), up to 60 percent improved drain-source charge (Q oss) and up to 60 percent lower gate charge (Q g). Combined, these features result in increased efficiencies in both hard- and soft-switching applications.

    This leads to a significant reduction in power loss compared to traditional silicon technology, ranging from 20 to 60 percent depending on the specific use case. The CoolGaN Transistor 650 V G5 product family offers a wide range of R DS(on) package combinations. Ten R DS(on) classes are available in various SMD packages, such as ThinPAK 5×6, DFN 8×8, TOLL and TOLT. All products are manufactured on high-performance 8-inch production lines in Villach (Austria) and Kulim (Malaysia). Target applications range from consumer and industrial switched-mode power supply (SMPS) such as USB-C adapters and chargers, lighting, TV, data center, and telecom rectifiers to renewable energy and motor drives in home appliances.

    Infineon will showcase the EasyPACK modules with CoolGaN at PCIM 2025 in Nuremberg at the Infineon booth in Hall 7, Booth 470. Further information is available here.

    Original – Infineon Technologies

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