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Infineon Technologies has announced its support for NVIDIA’s 800 VDC power architecture, introduced at Computex 2025, marking a major step toward creating more efficient, scalable, and serviceable AI data centers. As the power demands of artificial intelligence infrastructure continue to grow exponentially, the move from traditional 54 V systems to centralized 800 VDC architectures is becoming essential to improve energy efficiency, reduce losses, and increase overall system reliability.
Adam White, Division President of Power & Sensor Systems at Infineon Technologies, emphasized the company’s role in shaping this transformation. “There is no AI without power,” he stated. “We are working with NVIDIA on intelligent power systems that not only meet the demands of future AI data centers but also minimize system downtimes. By driving the shift to high-density, reliable, and safe 800 VDC architectures, we are redefining how power is delivered to AI infrastructure and maximizing the value of every watt.”
Infineon’s collaboration with NVIDIA focuses on ensuring both safety and serviceability in 800 VDC-powered systems. One key innovation is the integration of hot-swap controller functionality, which enables server boards to be safely replaced or maintained while the rest of the rack continues operating. This solution, based on Infineon’s CoolSiC™ JFET technology, allows controlled pre-charging and discharging of server boards, preventing electrical hazards and eliminating costly downtime.
As AI data center power requirements rise — with rack power expected to reach 500 kilowatts and potentially 1 megawatt by the end of the decade — Infineon is developing next-generation power conversion systems that combine its Intermediate Bus Converter (IBC) and high-frequency gallium nitride (GaN) switching technologies. These solutions support efficient two- and three-stage power conversion from the grid to the server core, achieving up to 98 percent efficiency per conversion stage.
The company’s holistic approach extends beyond power conversion to include protection and control components that enhance reliability and sustainability. By leveraging silicon carbide (SiC), GaN, and silicon technologies, Infineon provides a complete portfolio of semiconductor solutions to enable safe and efficient megawatt-scale AI server racks.
Infineon’s experts will further discuss power conversion solutions for future server boards operating directly from high-voltage DC at the OCP Global Summit 2025 and explore advancements in AI data center power systems at OktoberTech Silicon Valley 2025.
With these developments, Infineon continues to position itself at the forefront of the semiconductor industry’s drive toward powering the AI revolution with smarter, more sustainable, and higher-performance energy systems.
Original – Infineon Technologies
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To enable the next generation of solid-state power distribution systems, Infineon Technologies AG is expanding its silicon carbide (SiC) portfolio with the new CoolSiC™ JFET product family. The new devices deliver minimized conduction losses, solid turn-off capability, and high robustness, making them ideal for advanced solid-state protection and distribution.
With robust short-circuit capability, thermal stability in linear mode, and precise overvoltage control, CoolSiC JFETs enable reliable and efficient system performance in a wide range of industrial and automotive applications, including solid-state circuit breakers (SSCBs), AI data center hot-swaps, eFuses, motor soft starters, industrial safety relays, and automotive battery disconnect switches.
“With CoolSiC JFET, we are addressing the growing demand for smarter, faster, and more robust power distribution systems,” says Dr. Peter Wawer, Division President Green Industrial Power at Infineon Technologies. “This application-driven power semiconductor technology is specifically designed to provide our customers with the tools they need to solve the complex challenges in this rapidly evolving space. We are proud to introduce devices that achieve best-in-class R DS(ON), setting a new standard for SiC performance and reaffirming Infineon’s leadership in the field of wide-bandgap technology.”
The first generation of CoolSiC JFETs features ultra-low R DS(ON) starting at 1.5 mΩ (750 V BDss) and 2.3 mΩ (1200 V BDss), significantly reducing conduction losses. The bulk-channel optimized SiC JFET offers high robustness under short-circuit and avalanche failure conditions. Housed in a Q-DPAK top-side cooled package, the devices support easy paralleling and scalable current handling, enabling compact, high-power systems with flexible layout and integration options. Their predictable switching behavior under thermal stress, overload and fault conditions provides maximum long-term reliability in continuous operation.
To meet the thermal and mechanical challenges of harsh application environments, CoolSiC JFETs leverage Infineon’s advanced .XT interconnection technology with diffusion soldering. This significantly improves transient thermal impedance and robustness under pulsed and cyclic loads typical of industrial power systems. Tested and qualified under real-world operating conditions of solid-state power switches and based on the industry-standard Q-DPAK package, the devices enable quick and seamless design integration in both industrial and automotive applications.
Engineering samples of the new CoolSiC JFET family will be available later in 2025, with volume production starting in 2026. The product portfolio will be further expanded with a variety of packages and modules. The product family has been successfully demonstrated at the Infineon booth at PCIM Europe 2025 in Nuremberg. More information is available at www.infineon.com/jfet.
Original – Infineon Technologies
