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Infineon Technologies AG is expanding its CoolSiC™ JFET portfolio to address increasing demand from AI data centers and the growing adoption of solid-state power protection systems. The expanded portfolio includes new devices, package options, and configurations designed to support high-performance power distribution and protection applications.
The company announced that its first 750 V and 1200 V CoolSiC JFET devices in Q-DPAK packages, originally introduced last year, are now entering mass production. At PCIM Europe 2026, Infineon will also showcase additional package options and normally-off variants, further broadening its discrete power semiconductor offering for applications such as solid-state circuit breakers (SSCBs), battery disconnect switches, and power distribution systems used in AI data centers. Target applications include power supply units (PSUs), power backup units (PBUs), and intermediate bus converter (IBC) hot-swap and eFuse designs.
In these applications, power semiconductors spend most of their operating life in the on-state, while fault conditions occur only briefly and infrequently. As a result, conduction losses, linear mode robustness, and avalanche capability become critical performance parameters.
To address these requirements, Infineon is introducing a 1200 V CoolSiC JFET in the widely used TO-247-4 package. Offering on-resistance values starting at 5.0 mΩ, the device enables direct replacement in existing SiC MOSFET designs utilizing standard through-hole packages without requiring PCB redesign.
The company is also expanding the portfolio with normally-off CoolSiC JFET solutions that combine a CoolSiC JFET and an OptiMOS™ low-voltage silicon MOSFET within a single package.
The Dual Drive configuration provides independent access to both the SiC JFET and silicon MOSFET gates, allowing designers greater flexibility and control at the PCB level. The configuration also supports overdrive operation at VGS = 2 V, reducing RDS(on) by approximately 10%. The 750 V Dual Drive version is available in both TOLL and Q-DPAK packages, while the 1200 V variant is offered in Q-DPAK.
Infineon is also introducing a Cascode configuration, where the SiC JFET gate is internally connected and only the MOSFET gate is externally accessible. This design allows operation with standard gate drivers without requiring specialized gate-drive circuitry. The Cascode solution is targeted at applications where both switching and conduction losses are important design considerations. The 750 V Cascode version is available in a TOLL package.
The production-ready CoolSiC JFET devices in Q-DPAK packages offer RDS(on) values as low as 1.6 mΩ for the 750 V version and 2.3 mΩ for the 1200 V version, positioning them among the lowest-resistance SiC devices currently available in these voltage classes.
All devices are based on Infineon’s .XT interconnection technology utilizing diffusion soldering, which enhances thermal performance and improves robustness under pulsed and cyclic operating conditions. The devices are qualified under real-world operating environments to support reliable operation during overload and fault events.
According to Infineon, solid-state protection solutions based on CoolSiC JFET technology can achieve switching speeds that are orders of magnitude faster than traditional electromechanical protection systems. This capability helps reduce equipment damage, minimize downtime, and extend system operating life.
In AI data center environments, rapid fault isolation supports the protection of high-value computing and memory assets while enabling higher power density and improved uptime. For industrial applications, including solid-state circuit breakers, relays, and battery management systems, the devices provide long-term conduction reliability together with fast fault response capabilities.
With the addition of Q-DPAK, TO-247-4, and TOLL package options, as well as normally-on, Dual Drive, and Cascode configurations, Infineon now offers a comprehensive CoolSiC JFET discrete portfolio covering a broad range of on-resistance levels, gate-drive approaches, and assembly requirements.
The CoolSiC JFET 750 V and 1200 V devices in Q-DPAK packages are scheduled to enter mass production in 2026. Engineering samples of the additional TO-247-4, Dual Drive, and Cascode variants are currently available, with mass production also planned for 2026.
Infineon will showcase its expanded CoolSiC JFET discrete portfolio at PCIM Europe 2026 in Nuremberg, Germany, at Hall 7, Booth 470.
Original – Infineon Technologies
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Infineon Technologies has announced its support for NVIDIA’s 800 VDC power architecture, introduced at Computex 2025, marking a major step toward creating more efficient, scalable, and serviceable AI data centers. As the power demands of artificial intelligence infrastructure continue to grow exponentially, the move from traditional 54 V systems to centralized 800 VDC architectures is becoming essential to improve energy efficiency, reduce losses, and increase overall system reliability.
Adam White, Division President of Power & Sensor Systems at Infineon Technologies, emphasized the company’s role in shaping this transformation. “There is no AI without power,” he stated. “We are working with NVIDIA on intelligent power systems that not only meet the demands of future AI data centers but also minimize system downtimes. By driving the shift to high-density, reliable, and safe 800 VDC architectures, we are redefining how power is delivered to AI infrastructure and maximizing the value of every watt.”
Infineon’s collaboration with NVIDIA focuses on ensuring both safety and serviceability in 800 VDC-powered systems. One key innovation is the integration of hot-swap controller functionality, which enables server boards to be safely replaced or maintained while the rest of the rack continues operating. This solution, based on Infineon’s CoolSiC™ JFET technology, allows controlled pre-charging and discharging of server boards, preventing electrical hazards and eliminating costly downtime.
As AI data center power requirements rise — with rack power expected to reach 500 kilowatts and potentially 1 megawatt by the end of the decade — Infineon is developing next-generation power conversion systems that combine its Intermediate Bus Converter (IBC) and high-frequency gallium nitride (GaN) switching technologies. These solutions support efficient two- and three-stage power conversion from the grid to the server core, achieving up to 98 percent efficiency per conversion stage.
The company’s holistic approach extends beyond power conversion to include protection and control components that enhance reliability and sustainability. By leveraging silicon carbide (SiC), GaN, and silicon technologies, Infineon provides a complete portfolio of semiconductor solutions to enable safe and efficient megawatt-scale AI server racks.
Infineon’s experts will further discuss power conversion solutions for future server boards operating directly from high-voltage DC at the OCP Global Summit 2025 and explore advancements in AI data center power systems at OktoberTech Silicon Valley 2025.
With these developments, Infineon continues to position itself at the forefront of the semiconductor industry’s drive toward powering the AI revolution with smarter, more sustainable, and higher-performance energy systems.
Original – Infineon Technologies
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To enable the next generation of solid-state power distribution systems, Infineon Technologies AG is expanding its silicon carbide (SiC) portfolio with the new CoolSiC™ JFET product family. The new devices deliver minimized conduction losses, solid turn-off capability, and high robustness, making them ideal for advanced solid-state protection and distribution.
With robust short-circuit capability, thermal stability in linear mode, and precise overvoltage control, CoolSiC JFETs enable reliable and efficient system performance in a wide range of industrial and automotive applications, including solid-state circuit breakers (SSCBs), AI data center hot-swaps, eFuses, motor soft starters, industrial safety relays, and automotive battery disconnect switches.
“With CoolSiC JFET, we are addressing the growing demand for smarter, faster, and more robust power distribution systems,” says Dr. Peter Wawer, Division President Green Industrial Power at Infineon Technologies. “This application-driven power semiconductor technology is specifically designed to provide our customers with the tools they need to solve the complex challenges in this rapidly evolving space. We are proud to introduce devices that achieve best-in-class R DS(ON), setting a new standard for SiC performance and reaffirming Infineon’s leadership in the field of wide-bandgap technology.”
The first generation of CoolSiC JFETs features ultra-low R DS(ON) starting at 1.5 mΩ (750 V BDss) and 2.3 mΩ (1200 V BDss), significantly reducing conduction losses. The bulk-channel optimized SiC JFET offers high robustness under short-circuit and avalanche failure conditions. Housed in a Q-DPAK top-side cooled package, the devices support easy paralleling and scalable current handling, enabling compact, high-power systems with flexible layout and integration options. Their predictable switching behavior under thermal stress, overload and fault conditions provides maximum long-term reliability in continuous operation.
To meet the thermal and mechanical challenges of harsh application environments, CoolSiC JFETs leverage Infineon’s advanced .XT interconnection technology with diffusion soldering. This significantly improves transient thermal impedance and robustness under pulsed and cyclic loads typical of industrial power systems. Tested and qualified under real-world operating conditions of solid-state power switches and based on the industry-standard Q-DPAK package, the devices enable quick and seamless design integration in both industrial and automotive applications.
Engineering samples of the new CoolSiC JFET family will be available later in 2025, with volume production starting in 2026. The product portfolio will be further expanded with a variety of packages and modules. The product family has been successfully demonstrated at the Infineon booth at PCIM Europe 2025 in Nuremberg. More information is available at www.infineon.com/jfet.
Original – Infineon Technologies
