-
Infineon Technologies AG has unveiled EasyPACK™ S, a new compact power module and packaging concept developed to address growing demand for higher power density in space-constrained applications. Introduced at PCIM Europe 2026, the new platform is designed for applications such as electric vehicle onboard chargers and power supplies for AI data centers, where compact size, thermal performance, and efficiency are critical requirements.
EasyPACK S features a package height of just 5.6 mm and a footprint of approximately 33 × 36 mm², enabling significant system miniaturization while maintaining reliable thermal performance and reduced electromagnetic interference (EMI). The first modules in the new package family integrate Infineon’s CoolSiC™ MOSFET 1200 V Generation 2 technology, as well as 1200 V IGBT4 and IGBT7 devices.
The new module platform has been qualified according to the latest industrial and automotive standards. By incorporating Infineon’s .XT interconnection technology, EasyPACK S delivers enhanced reliability and extended operational lifetime. An integrated direct bonded copper (DBC) substrate provides stable thermal characteristics and uniform temperature distribution across the module.
Infineon has also implemented a new plastic material and silicone gel, allowing the modules to support continuous operating junction temperatures of up to Tvj(op) = 175°C. In addition, PressFIT pin technology doubles current-carrying capability while simplifying PCB assembly.
The package has been engineered to support automated manufacturing processes through features such as defined gripping areas, alignment holes, and reduced pin-to-pin tolerances. These design elements help streamline production while reducing manufacturing time and cost.
EasyPACK S has been developed as a scalable platform capable of supporting future silicon carbide and gallium nitride power devices while meeting demanding lifetime and reliability requirements. The platform architecture offers flexibility across semiconductor technologies, chip configurations, topologies, and power classes, enabling designers to optimize performance and accelerate product development.
The first EasyPACK S modules incorporating CoolSiC MOSFET G2 and IGBT4 technologies are scheduled to become available in July. The products are being showcased at Infineon’s booth during PCIM Europe 2026 in Nuremberg.
Original – Infineon Technologies
-
Infineon Technologies AG has introduced a new family of silicon carbide (SiC) bidirectional switches (BDS) based on its 750 V CoolSiC™ Generation 2 technology. The new devices integrate two power switches into a single component through a vertically integrated dual-die, common-drain architecture housed in a top-side-cooled Q-DPAK package, simplifying system design and enabling new power conversion topologies.
The 750 V CoolSiC BDS is designed to support modern power systems requiring high efficiency, reliability, and long-term operational robustness. According to Infineon, the devices deliver strong performance across key switching parameters, including optimized RDS(on) × Qrr, low RDS(on) × QOSS, and low gate charge (Qg), helping to reduce both switching and conduction losses while enabling ultra-fast switching operation.
The devices feature a typical gate threshold voltage (VGS(th)) of 4.5 V at 25°C and an ultra-low QGD/QGS ratio that improves immunity against parasitic turn-on. In addition, an extended transient gate-bias tolerance ranging from -11 V to +25 V increases design margin and compatibility with existing gate-driver solutions. Rated for dv/dt performance up to 200 V/ns, the devices support high-frequency switching applications while maintaining durability and reliability. The initial product portfolio will cover on-resistance values ranging from 14 mΩ to 66 mΩ.
Designed for demanding power conversion environments, the 750 V CoolSiC BDS offers a breakdown voltage of 840 V, providing additional margin for systems operating at bus voltages above 500 V. The devices also feature proven avalanche robustness, overload endurance up to 200°C for 100 hours, and a short-circuit withstand capability of 2 µs. These characteristics help protect systems from voltage surges, transient stress, energy pulses, and inrush current events, supporting fault-tolerant operation over the product lifetime.
The new bidirectional switches further expand Infineon’s top-side-cooled product portfolio and support native liquid-cooling implementations in high-power applications. The company notes that the technology enables new levels of energy efficiency through the adoption of advanced power conversion topologies.
In automotive applications, the 750 V CoolSiC BDS is intended for onboard chargers (OBCs), EV charging systems, eFuse implementations, and pre-charge circuits. When combined with Infineon’s CoolSiC H-DPAK half-bridge devices, the solution supports the transition toward single-stage silicon carbide-based onboard charger architectures, enabling compact, high-power-density designs with improved space and cost efficiency.
For industrial applications, the technology is targeted at a range of emerging use cases, including:
• HVDC AI power supplies with native liquid cooling
• Residential solar and energy storage systems
• HVAC systems for hospitals and onsite data centers
• Current source inverter (CSI) drives for eVTOL platforms
• HVDC protection systems for power infrastructure and IT racks
• Fast-charging systems for humanoid robot fleets
Sampling of the 750 V CoolSiC bidirectional switch family has already commenced.
Original – Infineon Technologies
-
Infineon Technologies AG has introduced the H-DPAK, a new addition to its top-side cooling package portfolio that integrates half-bridge devices based on 750 V CoolSiC™ Generation 2 technology. Designed to address evolving requirements in automotive and industrial power conversion systems, the new package combines high-performance silicon carbide technology with a compact, scalable form factor optimized for advanced power architectures.
The H-DPAK integrates a complete unidirectional half-bridge power stage within a single package. It incorporates a split lead-frame design with optimized drain pads that improve heat spreading and support clearance compliance in dense, high-power layouts. The package also maintains the industry-standard 2.3 mm height used by Infineon’s established Q-DPAK and TOLT packages, enabling seamless board-level integration and drop-in compatibility.
The new package is designed for liquid-cooling-ready systems and helps reduce parasitic loop inductance, supporting cleaner high-speed switching operation. By enabling higher switching frequencies, the H-DPAK contributes to reduced passive component size and improved overall system efficiency while leveraging the performance characteristics of CoolSiC technology, including optimized RDS(on) × QOSS and RDS(on) × Qrr performance, as well as robustness under avalanche, overload, and short-circuit conditions.
Infineon positions the H-DPAK half-bridge as a core switching building block that can be adapted to a broad range of power conversion topologies. Its integrated architecture supports more compact designs where board space utilization and total cost of ownership are key considerations. Compared with discrete board-level solutions, the H-DPAK enables higher switching frequencies, improving dynamic performance and allowing more compact magnetic components.
Target applications include:
• Next-generation HVDC AI power supply units utilizing five-level active neutral point clamped (5L ANPC) topologies
• HVDC battery and capacitor backup units
• Solid-state transformers
• Residential solar and energy storage systems
• Humanoid robot charging systems
• Two-stage and single-stage onboard chargers (OBCs)
• DC-DC converters
• Auxiliary power systems for electric vehicles (xEVs)
The integrated 750 V CoolSiC G2 technology features low gate charge (Qg) to reduce gate-drive losses, high dv/dt capability for high-frequency operation, and wide gate-bias tolerance that enhances design margins while supporting compatibility with existing gate-driver architectures. These characteristics make the solution suitable for high-power automotive and industrial applications where switching efficiency and robustness are critical.
With the introduction of the H-DPAK, Infineon further expands its top-side cooled packaging portfolio, providing a solution designed to support native liquid cooling and the increasing performance demands of next-generation power conversion systems.
Samples of the H-DPAK devices are available now.
Original – Infineon Technologies
-
Infineon Technologies AG has expanded its XHP™ 2 power module portfolio with new 2300 V CoolSiC™ MOSFET variants, targeting next-generation high-voltage renewable energy and energy storage systems.
The new silicon carbide modules are designed to support DC-link voltages up to 1500 V, aligning with the industry shift toward higher-voltage architectures aimed at improving efficiency and reducing system complexity. The modules are offered with RDS(on) values ranging from 1 mΩ to 2 mΩ and isolation voltages of either 4 kV or 6 kV, enabling flexibility across various high-power applications.
By leveraging SiC technology, the modules significantly reduce switching and conduction losses compared to conventional silicon solutions. This enables higher inverter efficiency, increased power density, and operation at higher switching frequencies, which can reduce harmonic distortion and shrink overall system size.
The devices are packaged in Infineon’s XHP 2 platform, featuring symmetrical switching characteristics that simplify paralleling in large power converters. The modules also integrate Infineon’s .XT interconnection technology to improve reliability and extend operational lifetime. Optional pre-applied thermal interface material further simplifies assembly and enhances thermal consistency.
Infineon highlighted measurable system-level performance improvements, including power densities reaching 300 kW/L in wind power demonstrations and semiconductor losses below 0.7% of output power in battery storage applications.
From a market perspective, the launch reflects accelerating demand for higher-voltage, high-efficiency power conversion in renewable energy infrastructure, utility-scale battery storage, and grid modernization projects. As system voltages continue rising to improve energy transmission efficiency, 2300 V SiC devices are emerging as a key enabling technology.
Strategically, Infineon is strengthening its position in the rapidly growing high-voltage SiC market, where scalability, efficiency, and reliability are becoming critical differentiators for renewable energy and industrial power systems.
Original – Infineon Technologies
-
Infineon Technologies announced that its CoolSiC™ MOSFETs have been adopted in Toyota’s new bZ4X model. The silicon carbide devices are integrated in the vehicle’s on-board charger (OBC) and DC/DC converter, leveraging SiC’s low-loss performance, high thermal capability and high-voltage strength to help extend driving range and reduce charging time.
“We are very proud that Toyota, one of the world’s largest automakers, has chosen Infineon’s CoolSiC technology. Silicon carbide enhances the range, efficiency and performance of electric vehicles and is therefore a very important part of the future of mobility,” said Peter Schaefer, Executive Vice President and Chief Sales Officer Automotive at Infineon. He added that Infineon’s focus on innovation and zero-defect quality supports rising demand for power electronics in electromobility.
Infineon noted that CoolSiC MOSFETs use a trench gate structure that reduces normalized on-resistance and chip size, lowering both conduction and switching losses to improve overall efficiency in automotive power systems. Optimized parasitic capacitance and gate threshold voltage also enable unipolar gate drive, which can simplify drive circuitry in the electric drivetrain while supporting high-density, high-reliability OBC and DC/DC converter designs.
Original – Infineon Technologies
-
Infineon Technologies AG introduced new package options for its CoolSiC™ MOSFET 750 V G2 technology, engineered to raise system efficiency and power density in automotive and industrial power conversion. The devices are available in Q-DPAK and D2PAK, with a portfolio offering typical RDS(on) values up to 60 mΩ at 25°C.
The extended lineup targets onboard chargers and HV-LV DCDC converters in automotive, as well as server and telecom SMPS and EV charging infrastructure on the industrial side. Ultra-low RDS(on) of 4 mΩ enables applications demanding exceptional static-switching performance, including eFuse, high-voltage battery disconnect switches, solid-state circuit breakers and solid-state relays—supporting more efficient, compact and reliable system designs.
A key differentiator is the top-side cooled Q-DPAK package, delivering optimal thermal performance and robustness for high-power use cases. The technology also achieves excellent RDS(on) × QOSS and best-in-class RDS(on) × Qfr, reducing switching losses in both hard- and soft-switching topologies and delivering superior efficiency in hard-switching conditions.
CoolSiC MOSFETs 750 V G2 combine a high threshold voltage VGS(th),typ of 4.5 V at 25°C with an ultra-low QGD/QGS ratio to reinforce robustness against parasitic turn-on (PTO). The platform supports extended gate-drive capability with static gate voltages down to -7 V and transient voltages down to -11 V, providing wider design margins and strong compatibility with other devices in the market.
Samples are available now: Q-DPAK in 4/7/20/33/40/50 mΩ and D2PAK in 7/25/33/40/50/60 mΩ.
Original – Infineon Technologies
-
Infineon Technologies AG has expanded its CoolSiC™ MOSFETs 400 V G2 portfolio with the top-side-cooled (TSC) TOLT package as well as the TO-247-3 and TO-247-4 packages. In addition, three new products in the TOLL package have been introduced, with rated voltages of 440 V (continuous) and 455 V (transient).
The new CoolSiC MOSFETs deliver improved thermal performance, system efficiency, and power density. They have been specifically designed to meet the requirements of high-power and compute-intensive applications, including AI server power supplies, solar inverters, uninterruptible power supplies, Class D audio amplifiers, motor drives, and solid-state circuit breakers. For these critical systems, the devices provide the required reliability and performance.
Compared to existing Si technologies in the 250 V and 300 V voltage classes, CoolSiC G2 400 V and 440 V MOSFETs achieve up to 50 percent lower conduction losses at an operating temperature of 120 °C, thanks to their flat R(DS(on) as a function of junction temperature (Tj). They also feature significantly improved switching figures of merit, resulting in at least five times lower reverse recovery charge.At the system level, CoolSiC G2 400 V and 440 V MOSFETs in a three-stage flying-capacitor CCM totem-pole PFC achieved up to 0.4 percentage points higher peak PSU efficiency compared to a state-of-the-art interleaved two-level CCM totem-pole PFC. This translates into approximately 15 percent lower system losses at peak efficiency.
Original – Infineon Technologies
-
Infineon Technologies AG is expanding its CoolSiC™ MOSFETs 650 V G2 portfolio with new 75 mΩ variants to meet the demand for more compact and powerful systems. The devices are available in multiple package options, including TOLL, ThinTOLL 8×8, TOLT, D2PAK, TO247-3, and TO247-4. As a result, the product family supports both Top Side Cooling (TSC) and Bottom Side Cooling (BSC) approaches and offers developers a high degree of flexibility.
The devices are ideal for high- and medium-power switching mode power supplies (SMPS) in different applications, including AI servers, renewable energy, electric vehicle and e-mobility chargers, humanoid robot chargers, televisions, and drives.
The CoolSiC MOSFETs 650 V G2 are based on the second-generation (G2) of CoolSiC technology and offer improved figures of merit, higher reliability, and enhanced ease of use compared to the previous generation. The different packages offer various advantages: TOLL and ThinTOLL 8×8 packages provide high thermal cycle stability on the PCB and enable compact system designs.When used in SMPS, they reduce the space requirements on the PCB and lower manufacturing costs at the system level. The list of target applications for TOLL and ThinTOLL 8×8 has been expanded, enabling PCB designers to address cost-reduction challenges. The addition of TOLT strengthens Infineon’s growing TSC product family, which also includes CoolMOS™ 8, CoolSiC, CoolGaN™ and Optimos™. The TSC variants allow up to 95 percent direct heat dissipation and enable designers to use both sides of the PCB, improving space utilization and reducing parasitic effects.
The CoolSiC MOSFETs 650 V G2 75 mΩ are available now and come in TOLL, ThinTOLL 8×8, TOLT, D2PAK, TO247-3, and TO247-4 packages. Further information is available at www.infineon.com/coolsic-650v.
Original – Infineon Technologies
-
Infineon Technologies AG launched its new CoolSiC™ MOSFET 750 V G2 technology, designed to deliver improved system efficiency and increased power density in automotive and industrial power conversion applications. The CoolSiC MOSFETs 750 V G2 technology offers a granular portfolio with typical R DS(on) values up to 60 mΩ at 25°C, making it suitable for a wide range of applications, including on-board chargers (OBCs), DC-DC converters, auxiliaries for electric vehicles (xEVs) as well as industrial applications in EV charging, solar inverter, energy storage systems, telecom and SMPS.
The ultra-low R DS(on) values 4 and 7 mΩ enable outstanding performance in static-switching applications, making the MOSFETs a perfect choice for applications such as eFuse, high-voltage battery disconnect switches, solid-state circuit breakers, and solid-state relays. The best-in-class lowest R DS(on) 4 mΩ is featured in Infineon’s innovative top-side cooled Q-DPAK package, which is designed to provide optimal thermal performance and reliability.
The technology also exhibits excellent R DS(on) x Q OSS and best-in-class R DS(on) x Q fr, contributing to reduced switching loss in both hard-switching and soft-switching topologies with superior efficiency in hard-switching user cases. With reduced gate charge, the technology allows for faster switching and reduces gate drive losses, making them more efficient in high-frequency applications.
Additionally, the CoolSiC MOSFETs 750 V G2 offer a combination of high threshold voltage V GS(th),typ of 4.5 V at 25°C and ultra-low Q GD/Q GS ratio, which reinforce robustness against parasitic turn-on (PTO). Furthermore, the technology allows for extended gate driving capabilities, supporting static gate voltages of up to -7 V and transient gate voltages of up to -11 V. This enhanced voltage tolerance provides engineers with greater design margins and best compatibility with other devices in the market.
The CoolSiC 750 V G2 delivers unparalleled switching performance, great ease-of-use and superior reliability with firm adherence to AEC Q101 standards for automotive-grade parts and JEDEC standard for industrial-grade parts. It enables a more efficient, compact and cost-effective designs to fulfill the ever‑growing market needs and underscores its commitment to reliability and longevity in safety-critical automotive applications.
Infineon’s CoolSiC MOSFET 750 V G2 Q-DPAK 4/7/16/25/60 mΩ samples are available to order. More information is available at www.infineon.com/coolsic-750v
Original – Infineon Technologies
-
Many industrial applications today are transitioning to higher power levels with minimized power losses, which can be achieved through increased DC link voltage. Infineon Technologies AG addresses this challenge by introducing the CoolSiC™ Schottky diode 2000 V G5, the first discrete silicon carbide diode on the market with a breakdown voltage of 2000 V. The product family is suitable for applications with DC link voltages up to 1500 VDC and offers current ratings from 10 to 80 A. This makes it ideal for higher DC link voltage applications such as in solar and EV charging applications.
The product family comes in a TO-247PLUS-4-HCC package, with 14 mm creepage and 5.4 mm clearance distance. This, together with a current rating of up to 80 A, enables a significantly higher power density. It allows developers to achieve higher power levels in their applications with only half the component count of 1200 V solutions. This simplifies the overall design and enables a smooth transition from multi-level topologies to 2-level topologies.
In addition, the CoolSiC Schottky diode 2000V G5 utilizes the .XT interconnection technology that leads to significantly lower thermal resistance and impedance, enabling better heat management. Furthermore, the robustness against humidity has been demonstrated in HV-H3TRB reliability tests. The diodes exhibit neither reverse recovery current nor forward recovery and feature a low forward voltage, ensuring enhanced system performance.
The 2000 V diode family is a perfect match for the CoolSiC MOSFETs 2000 V in the TO-247Plus-4 HCC package that Infineon introduced in spring 2024. The CoolSiC diodes 2000 V portfolio will be extended by offering them in the TO-247-2 package, which will be available in December 2024. A matching gate driver portfolio is also available for the CoolSiC MOSFETs 2000 V.
Original – Infineon Technologies
