November 20, 2025 – November 21, 2025
This two-day online tutorial focuses on Gallium Nitride (GaN) as an emerging and high-performance wide bandgap semiconductor for power electronics. GaN technology has matured significantly, with commercial devices now widely available for 40 V to 650 V applications in low and medium power ranges. The tutorial introduces the fundamentals of GaN device physics, explores packaging, driver technologies, protection strategies, reliability, and real-world application examples. Designed for engineers across the value chain, this program blends foundational knowledge with advanced design considerations.
Technical Chairs:
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Dr. Jan Sonsky
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Dr. Radoslava Mitova, Schneider Electric
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Thomas Ferianz, Infineon Technologies Austria
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Dr. Teng Long, University of Cambridge
Main Topics Covered:
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GaN material properties and device physics
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Epitaxial growth and substrate challenges
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High-frequency switching behavior and benefits
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Packaging considerations for GaN dies
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Gate driver solutions and protection schemes
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Reliability testing and design for robustness
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Trends and future directions in GaN adoption
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Applications across consumer, industrial, and telecom power systems
Why Attend:
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Understand the key performance benefits of GaN over Si and SiC
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Learn practical design guidelines to exploit GaN’s advantages in efficiency and power density
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Gain insight into packaging, protection, and system-level integration challenges
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Explore high-frequency operation, EMI implications, and thermal performance
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Get up to speed on the current and future landscape of GaN in power electronics
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Suitable for design engineers, application specialists, and researchers entering or advancing in the GaN space