March 17, 2026
The Wide-Bandgap Developer Forum 2026 brings together experts and engineers for a full day dedicated to the latest advances in silicon carbide (SiC) and gallium nitride (GaN) technologies. This established annual event continues to grow in popularity, offering both returning participants and first-time attendees a technically in-depth program focused entirely on wide-bandgap (WBG) innovation.
Throughout the day, specialists share practical insights across a broad range of applications, highlighting design strategies, development challenges, and real-world implementation of WBG power semiconductors. The forum addresses engineers working in research and development, design and pre-development, application engineering, as well as product designers and technical researchers.
Participants gain exposure to the full spectrum of WBG solutions, including discrete devices, power modules, and highly integrated solutions. The portfolio covers GaN technologies from 40 V to 700 V and SiC solutions from 400 V to 3.3 kV, enabling maximum flexibility for next-generation power conversion systems.
The Wide-Bandgap Developer Forum is a free, full-day virtual event starting at 9:00 am CET. Attendees can customize their individual program according to their interests. All sessions are recorded and made available on demand after the event.