March 17, 2026 – March 18, 2026
Gate drivers and control circuits form the critical interface between signal-level control and the power stage within modern power electronic systems. They ensure the safe and reliable operation of power semiconductor switches and play a decisive role in overall system performance, efficiency, and robustness.
This tutorial provides a comprehensive overview of the development of gate driving circuits for optimal operation of power electronics. It addresses the fundamental semiconductor characteristics of MOSFETs and IGBTs, the influence of gate voltage on switching behavior, the design of power supplies for galvanically isolated circuitry, the impact of parasitic elements, and the implementation of protection functions.
Starting with silicon MOSFETs, the switching behavior is explained in detail and subsequently extended to Silicon Carbide (SiC) MOSFETs and IGBTs. Since the underlying physical mechanisms are fundamentally similar across voltage and power classes, the tutorial does not differentiate between high- and low-power devices. Particular attention is given to the new challenges introduced by wide-bandgap semiconductors, including robust operation at very high switching speeds and frequencies in order to fully realize system-level performance gains.
The focus of the tutorial is on power modules, while discrete devices are covered briefly for comparison. The objective is to provide practical and application-oriented knowledge to ensure safe and reliable driving and control of IGBTs and MOSFETs in advanced power electronic systems.
All presentations and discussions will be conducted in English.