SiC for power market: from substrate to device, recent results and future progress

SiC has superior efficiency to (Si) IGBT in the high voltage (600-3,300V) space and the high current (several hundred amperes) field that is in the spotlight in relation to EVs. SiC MOSFETS issues to be solved for the SiC market expansion are: substrate size, supply and defect density; device on resistance and trade off with short circuit and bipolar degradation; voltage surge and ringing linked to fast switching. In particular, the issues of reducing SiC MOSFET chip cost ($/amp) should be a top priority.

A review of industry challenges and future development will be presented. We will also focus on how SiC substrates will enable to address those challenges through advanced substrates engineering.

Why attend? Attendees will get an overview of device and semiconductor substrate engineering to get the better system cost of ownership.

Who should attend? Device design engineers, material procurement engineers, power module designers, system designers, cost analysis engineers, advanced purchasing.