-
STMicroelectronics has introduced MasterGaN6, marking the start of the second generation of its MasterGaN half-bridge family. The new power system-in-package combines an updated BCD driver with a high-performance GaN power transistor featuring 140 mΩ RDS(on), targeting compact, high-efficiency power conversion designs.
Building on the integration approach of the MasterGaN family, MasterGaN6 adds dedicated pins for fault indication and standby functionality to support smarter system management and improved power savings. The devices also integrate LDOs and a bootstrap diode, helping reduce external components while maintaining optimal gate-drive conditions.
ST said the updated driver is engineered for fast timing, enabling high-frequency operation through low minimum on-time and short propagation delays, which can help designers reduce circuit footprint. An ultra-fast wake-up time is also intended to improve burst-mode operation and support higher efficiency at light loads.
MasterGaN6 integrates protections including cross-conduction prevention, thermal shutdown and under-voltage lockout, supporting simplified layouts, smaller PCB designs and a lower bill of materials. The device is rated to handle up to 10 A and is aimed at consumer and industrial applications such as chargers, adapters, lighting power supplies and DC-to-AC solar micro-inverters. Its half-bridge configuration is positioned for multiple topologies, including active-clamp flyback (ACF), resonant LLC, inverse buck converters and power factor correction (PFC) circuits.
To support evaluation and design-in, ST has released the EVLMG6 evaluation board and added a MasterGaN6 model to the eDesignSuite PCB Thermal Simulator.
Original – STMicroelectronics
-
Micro Commercial Components (MCC) has introduced its Gen4 SiC Schottky Diode Series, a new family of high-voltage silicon carbide (SiC) Schottky Barrier Diodes aimed at improving efficiency and thermal performance in demanding power conversion designs. The series includes devices rated at 650 V and 1200 V peak repetitive reverse voltage (VRRM), supporting high-voltage rectification needs across industrial, automotive and energy infrastructure applications.
The new diodes are offered in DPAK, D2-PAK and TO-220AC packages, giving designers multiple options to balance footprint, mechanical integration and heat dissipation. MCC positions the lineup for systems where higher power density and robust thermal management are critical.
Built on Gen4 SiC technology, the devices deliver negligible reverse recovery charge (Qrr) and a low forward voltage drop, typically ≤ 1.65 V at rated current. As majority-carrier devices, SiC Schottky diodes avoid minority-carrier storage effects found in conventional silicon rectifiers, which helps reduce switching losses and supports higher-frequency operation.
MCC said the Gen4 SiC Schottky Diode Series is intended to enable higher switching efficiency, lower thermal losses and improved power density in high-voltage power stages.
Key features and benefits include negligible Qrr for reduced switching losses, low forward voltage drop to minimize conduction losses, fast switching capability for higher-frequency designs, and a positive temperature coefficient of forward voltage to support thermal stability. Package options include DPAK for compact layouts with PCB-based heat spreading, D2-PAK for higher-power thermal performance, and TO-220AC for through-hole mounting with low thermal resistance.
Original – Micro Commercial Components
-
SemiQ Inc will debut its latest SiC module developments at the 2026 Applied Power Electronics Conference (APEC). The company will present the portfolio at Booth #1451 during the event, running March 22–26.
SemiQ said the modules are designed to deliver compact, high-efficiency solutions for active front ends (AFE) and for high-performance compressor units used in advanced data center cooling systems. The lineup targets rising power and thermal demands driven by AI-focused data centers, as well as high-power industrial and EV applications.
Visitors to the booth will be able to see SemiQ’s QSiC™ Gen3 SiC modules, which the company says deliver up to 30% reductions in specific on-resistance (RONsp) and turn-off energy losses (EOFF) versus prior generations. SemiQ positions these improvements as a way to cut switching losses, simplify cooling and raise overall system efficiency in applications such as EV charging stations, energy storage systems and industrial motor drives.
Additional module families featured at APEC 2026 include:
- S3 modules, including a 608 A half-bridge with 2.4 mΩ RDS(on) and RθJC of 0.07°C/W
- SOT-227 modules, with five variants offering RDS(on) values of 7.4, 14.5 and 34 mΩ for server power supplies, battery chargers and PV inverters
- B2T1 six-pack modules spanning 19.5 to 82 mΩ RDS(on), designed to minimize parasitics in motor drives and advanced AC-DC converters
- B3 full-bridge modules delivering up to 120 A with RDS(on) as low as 8.6 mΩ, targeting high power density in high-voltage DC-DC systems
“These SiC technologies directly address the challenges faced by those implementing AI infrastructure,” said Dr. Timothy Han, President at SemiQ. “By improving efficiency, and addressing the escalating power demands of datacenters across key application areas, we are expanding the potential for AI to scale sustainably.”
Original – SemiQ
-
Navitas Semiconductor announced the launch of its 5th-generation GeneSiC technology platform, built around a new high-voltage silicon carbide Trench-Assisted Planar (TAP) MOSFET architecture. The company said the platform will underpin an industry-leading 1200 V MOSFET family and complements its 4th-generation GeneSiC ultra-high-voltage portfolio at 2300 V and 3300 V, targeting applications such as AI data centers, grid and energy infrastructure, and industrial electrification.
According to Navitas, the 5th-generation platform uses its most compact TAP architecture to combine planar-gate ruggedness with improved performance enabled by a trench structure in the source region. The design focus is to raise efficiency while supporting long-term reliability in high-voltage power conversion.
Navitas said the new 1200 V technology delivers a 35% improvement in the RDS,ON × QGD figure of merit versus the prior-generation 1200 V platform, reducing switching losses and enabling cooler operation and higher switching frequencies. High-speed switching performance is further supported by an approximately 25% improvement in the QGD/QGS ratio. Combined with a stable high threshold voltage specification (VGS,TH ≥ 3 V), the company positions the platform as more immune to parasitic turn-on in high-noise environments.
The 5th-generation technology also targets dynamic performance through an optimized RDS(ON) × EOSS characteristic and adds “Soft Body-Diode” technology intended to improve commutation behavior and reduce electromagnetic interference (EMI) in fast-switching power stages.
For reliability, Navitas said this generation is qualified to an “AEC-Plus” grade for long-term stability in demanding infrastructure applications. The company highlighted extended stress testing for static high-temperature, high-voltage conditions, dynamic reliability tests intended to reflect fast-switching mission profiles, and a focus on threshold voltage stability over prolonged switching stress. Navitas also cited extreme gate oxide reliability, with an extrapolated gate-oxide failure time exceeding 1 million years at operating VGS of 18 V and 175°C, and enhanced cosmic ray robustness aimed at lowering FIT rates for high-uptime environments. Navitas noted that “AEC-Plus” indicates parts exceeding AEC-Q101 and JEDEC standards for reliability testing based on Navitas test results.
“Our customers are redefining the boundaries of power conversion in AI data centers and energy infrastructure, and Navitas is marching along with them in every step of the way,” said Paul Wheeler, VP & GM of Navitas’ SiC Business Unit. “Significant technological improvements in our 5th generation GeneSiC technology underscore Navitas’ commitment to delivering industry-leading performance and reliability in silicon carbide MOSFETs.”
Navitas said a white paper on Trench-Assisted Planar technology is available from the company, and that additional 5th-generation GeneSiC product announcements are expected in the coming months.
Original – Navitas Semiconductor
-
The power electronics market is shifting rapidly as Gallium Nitride (GaN) gains wider adoption, and Infineon Technologies has released the 2026 edition of its annual GaN Insights report, outlining the state of GaN technology, emerging applications and the company’s latest product direction.
“GaN has become a market reality that has gained traction across various industries,” said Johannes Schoiswohl, Head of GaN Systems Business Line at Infineon. He added that Infineon’s product-to-system approach, manufacturing expertise and broad portfolio are intended to help customers navigate GaN adoption and capture its full potential.
Infineon points to strong market expansion expectations through 2030, driven by higher production volumes and broader penetration into new end markets. The company also expects 2026 to bring a wider set of design opportunities, including expanded use of GaN bidirectional switches (BDS) beyond solar inverters and EV on-board chargers. Infineon highlighted its high-voltage bidirectional GaN switch architecture based on a common-drain design with a double-gate structure using Gate Injection Transistor (GIT) technology, aimed at reducing die size versus conventional back-to-back approaches. In example system comparisons, Infineon notes that CoolGaN™ BDS operation up to 1 MHz can enable higher power output and lower system costs in solar microinverters.
The report also emphasizes GaN’s expansion into AI data centers, robotics, electric vehicles, renewable energy, and newer areas such as digital health and quantum computing. In data center power, Infineon describes GaN-enabled topologies as a path to higher efficiency and power density, supporting more compact architectures and lower losses. In robotics, the company highlights the potential for smaller motor drives with improved fine motion control.
Infineon positions its Integrated Device Manufacturing (IDM) strategy and 300-mm GaN manufacturing as key differentiators, alongside a portfolio spanning 40 V to 700 V across discrete and integrated solutions. The company cites recent platform examples including CoolGaN™ Transistor 650 V G5 devices, CoolGaN™ Transistor MV G5 parts with a monolithically integrated Schottky diode, and CoolGaN™ Automotive 100 V products aligned with AEC-Q101 requirements for the shift from 12 V to 48 V vehicle architectures.
Original – Infineon Technologies
-
Efficient Power Conversion (EPC) announced a broad licensing agreement with Renesas Electronics Corporation aimed at accelerating adoption of GaN in high-efficiency power systems.
Under the agreement, Renesas will gain access to EPC’s low-voltage eGaN technology and EPC’s established supply-chain ecosystem. The companies plan to collaborate over the next year to stand up internal wafer fabrication capability for these products. Renesas will also second-source several EPC GaN devices that are already in mass production, a move intended to improve supply-chain resilience and long-term availability for customers.
The partnership is framed around the rising demand for higher efficiency, higher power density, and lower carbon footprints in power conversion, where silicon is increasingly constrained by physical limits. GaN transistors, by contrast, enable faster switching, higher efficiency, and smaller form factors—benefits that are driving architecture shifts from consumer applications to AI data center power.
“Together, EPC and Renesas are forming a global alliance to deliver state-of-the-art power efficiency – cutting costs in AI data centers and enhancing autonomous systems,” said Alex Lidow, CEO of EPC.
Renesas recently expanded its GaN position through the acquisition of Transphorm, strengthening its high-voltage GaN portfolio for applications such as AC-DC power supplies, EV chargers, solar inverters, and industrial motor drives. By adding EPC’s low-voltage eGaN expertise, Renesas aims to broaden its portfolio across low- to high-voltage segments, supporting high-volume opportunities such as AI power architectures from 48 V down to 12 V and 1 V, as well as client computing and battery-powered designs.
“Expanding our business into low-voltage GaN allows us to serve the fastest-growing power segments,” said Rohan Samsi, VP, GaN Business Division at Renesas. “This agreement with EPC complements our established high-voltage 650 V+ portfolio and enables us to capitalize on high-volume markets such as AI power architectures from 48 V down to 12 V and 1 V, as well as client computing and battery-operated applications.”
Original – Efficient Power Conversion
-
Infineon Technologies announced that its CoolSiC™ MOSFETs have been adopted in Toyota’s new bZ4X model. The silicon carbide devices are integrated in the vehicle’s on-board charger (OBC) and DC/DC converter, leveraging SiC’s low-loss performance, high thermal capability and high-voltage strength to help extend driving range and reduce charging time.
“We are very proud that Toyota, one of the world’s largest automakers, has chosen Infineon’s CoolSiC technology. Silicon carbide enhances the range, efficiency and performance of electric vehicles and is therefore a very important part of the future of mobility,” said Peter Schaefer, Executive Vice President and Chief Sales Officer Automotive at Infineon. He added that Infineon’s focus on innovation and zero-defect quality supports rising demand for power electronics in electromobility.
Infineon noted that CoolSiC MOSFETs use a trench gate structure that reduces normalized on-resistance and chip size, lowering both conduction and switching losses to improve overall efficiency in automotive power systems. Optimized parasitic capacitance and gate threshold voltage also enable unipolar gate drive, which can simplify drive circuitry in the electric drivetrain while supporting high-density, high-reliability OBC and DC/DC converter designs.
Original – Infineon Technologies
-
Navitas Semiconductor introduced a 10 kW DC-DC reference platform designed to accelerate the shift toward high-voltage DC (HVDC) power architectures in AI data centers. The company said the platform reaches up to 98.5% peak efficiency at 1 MHz switching frequency, enabling higher power density for large-scale data center expansion.
The all-GaN design uses advanced 650 V and 100 V GaNFast FETs in a three-level half-bridge topology with synchronous rectification. In a full-brick form factor (61 × 116 × 11 mm), Navitas reports 98.5% peak efficiency and 98.1% full-load efficiency, delivering 2.1 kW/in³ power density.
Navitas positions the platform as production-oriented and compatible with both 800 V–to–50 V and ±400 V–to–50 V architectures at 10 kW. It integrates auxiliary power and control functions to simplify adoption and support compact, high-power-density module designs for next-generation HVDC AI data centers.
“The design platform enables the transition to HVDC data center power infrastructure, supporting the future power requirements of AI workloads that will demand between 100- and even 1,000-times more compute per query,” said Chris Allexandre, President and CEO of Navitas Semiconductor. “Navitas continues to redefine what’s possible in AI data center power, with the 10 kW DC-DC solution giving breakthrough efficiency, power density, and scalability to allow faster and cooler operation while making them more sustainable.”
The 10 kW DC-DC platform is currently being evaluated with key data center customers through collaborative development and is scheduled to debut publicly at APEC in San Antonio, Texas, March 22–26, at the Navitas booth (#2027).
Original – Navitas Semiconductor
-
RIR Power Electronics Limited introduced a new family of Silicon Carbide (SiC) Merged-PiN Schottky (MPS) diodes, advancing power device performance for electric vehicles, industrial power systems, and energy infrastructure. By combining Schottky and PiN structures in a single monolithic device, the SiC MPS architecture addresses long-standing trade-offs between efficiency, high-voltage blocking, and ruggedness, delivering real-world reliability at high power and temperature.
Positioned for the next phase of global electrification across transportation, renewables, data centers, and industrial infrastructure, the devices leverage SiC’s inherent advantages—higher operating voltages, faster switching, and superior thermal behavior—to boost power density while reducing system losses.
Key advantages
- High surge current capability for inrush, short-circuit, and grid-disturbance events
- Low leakage at elevated temperatures for stable, predictable operation
- Improved avalanche and blocking robustness for DC-link and grid-tied systems
- Near-zero reverse recovery for ultra-fast, low-loss switching
- Higher system reliability with reduced need for snubbers, over-design, and derating
Target applications
- EVs and HEVs (traction, OBC, DC-DC)
- Data centers and AI power infrastructure
- Renewable energy and grid systems
- Industrial drives and motion control
- Aerospace and defense platforms
- Green hydrogen and electrolysis systems
“With our new 1200 V SiC MPS diodes, RIR is making high-performance Silicon Carbide more accessible, reliable, and deployment-ready,” said Dr. Harshad Mehta, Non-Executive Chairman, RIR Power Electronics Ltd. “Backed by decades of high-power semiconductor expertise, we are enabling designers worldwide to harness the full potential of SiC—confidently and efficiently—across the most demanding applications, including EVs, data centers, renewables, industrial systems, aerospace, and green hydrogen.”
Original – RIR Power Electronics
-
Efficient Power Conversion (EPC) has begun volume production of the EPC2366, the first transistor in its seventh-generation eGaN® platform. Engineered to set a new performance bar, the device delivers up to 3× improvement over equivalent silicon MOSFETs, combining a typical RDS(on) of 0.84 mΩ with an optimized RDS(on) × QG figure of merit of 12.6 mΩ·nC to simultaneously cut conduction and switching losses and improve thermal behavior.
Targeted at high-efficiency, high-density systems, EPC2366 is suited for synchronous rectification, high-density DC-DC conversion, AI server power supplies, and advanced motor drives. It supports 40 V drain-to-source operation and 48 V transients, with continuous drain current up to 88 A and pulsed current to 360 A. Thermal performance is aided by a compact 3.3 × 2.6 mm PQFN package featuring a junction-to-case thermal resistance of 0.6 °C/W.
“We have developed a seventh-generation GaN platform that creates a new state-of-the-art in power transistor performance. The 40 V, EPC2366 is the first of this family to enter mass production. However, EPC is sampling seventh-generation 25 V and 15 V transistors now and expects more mass production transitions in the first half of 2026,” said Alex Lidow, CEO and co-founder of EPC.
To speed evaluation, EPC offers the EPC90167 half-bridge board integrating two EPC2366 devices in a low-parasitic layout. It supports standard PWM drive signals and flexible input modes, providing a practical reference platform for real-world assessments in fast, high-current power stages.
Original – Efficient Power Conversion
