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ROHM Co., Ltd. has developed its 5th-generation EcoSiC™ MOSFETs, targeting improved efficiency and performance in high-power applications such as electric vehicles, AI data centers, and industrial power systems.
The new generation delivers a significant performance improvement over previous devices, with approximately 30% lower ON-resistance at high temperatures (175°C) compared to 4th-generation SiC MOSFETs under similar conditions. This reduction directly translates into lower conduction losses, enabling higher efficiency, increased power density, and more compact system designs—particularly critical for traction inverters and high-performance power supplies.
The technology is positioned to address two major market drivers. In automotive, it supports longer EV driving range and faster charging through more efficient inverters and onboard chargers. In parallel, the rapid expansion of AI infrastructure and data centers is increasing power density requirements, making efficient power conversion a key bottleneck for system scalability.
ROHM has a long-standing position in SiC, having started mass production as early as 2010. Its 4th-generation devices have already seen broad adoption across automotive and industrial markets. The 5th-generation platform builds on this foundation with structural and process optimizations that enhance high-temperature performance—an increasingly important factor as power systems operate under more demanding conditions.
Commercially, ROHM began offering bare die versions in 2025 and completed development in March 2026. Sampling of discrete devices and modules based on the new generation is scheduled to begin in July 2026, with further expansion planned across voltage classes and packaging options.
From a market perspective, this launch reinforces the transition of silicon carbide into a mainstream power semiconductor technology. As electrification and AI-driven power demand accelerate, improvements in efficiency and thermal performance at the device level are becoming critical enablers for next-generation systems. ROHM’s latest generation strengthens its competitive positioning in the increasingly crowded SiC landscape, where performance gains at high temperature and high power are key differentiators.
Original – ROHM
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Robert Bosch GmbH has unveiled its third-generation silicon carbide (SiC) MOSFET technology, delivering significant improvements in efficiency, thermal performance, and robustness for electric vehicle (EV) power electronics.
Built on Bosch’s established dual-channel trench architecture, the Gen 3 devices introduce four key structural enhancements that collectively improve performance while maintaining manufacturability. These advancements result in a 20% reduction in specific on-resistance, approximately 10% improvement in short-circuit withstand capability, and a 40% thinner die, enabling better heat dissipation and higher power density.
From a system perspective, these improvements translate into more efficient traction inverters, reduced energy losses, and more compact module designs. The optimized capacitance characteristics also reduce switching losses by around 10%, further enhancing overall inverter efficiency.
A key innovation is the introduction of an additional p-type shielding region beneath the trench, improving electric field control and long-term gate oxide reliability. Additionally, a refined two-zone JFET structure enhances the trade-off between conduction performance and short-circuit robustness—one of the critical challenges in SiC device design.
The reduction in die thickness to approximately 100 µm improves thermal conductivity and lowers material usage, supporting both performance gains and cost efficiency. Combined with Bosch’s transition to 200 mm SiC wafer manufacturing, this enables higher output per wafer and improved scalability.
Strategically, Bosch is positioning Gen 3 SiC MOSFETs to move beyond premium EV segments into mass-market applications. While SiC adoption has historically been concentrated in high-end vehicles due to cost, these efficiency gains and manufacturing improvements help lower system costs, accelerating broader adoption across the automotive market.
From a market perspective, this development reinforces the ongoing shift toward SiC in automotive power electronics, particularly in traction inverters. As EV volumes scale globally, innovations that improve cost-performance balance—such as Bosch’s Gen 3 platform—are critical to expanding SiC penetration across all vehicle segments.
Original – Bosch
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onsemi has secured a major design win with Sineng Electric, supplying its latest-generation hybrid power integrated modules (PIMs) for next-generation renewable energy platforms, including 430 kW liquid-cooled energy storage systems (ESS) and 320 kW utility-scale solar string inverters.
The hybrid PIM integrates onsemi’s FS7 insulated-gate bipolar transistor (IGBT) technology with EliteSiC silicon carbide diodes in a high-density F5BP package. This combination delivers measurable performance gains, including up to 0.1% higher efficiency, 10% lower switching losses, and up to 8% lower power dissipation compared to previous generations.
At the system level, these improvements translate into significant benefits for Sineng’s platforms. In solar inverter applications, benchmarking showed a 0.07% efficiency increase and a reduction of 225 W in power losses for a 320 kW system. For energy storage systems, the modules enable up to 0.75% improvement in round-trip efficiency, a 5% reduction in auxiliary power consumption, and higher overall power density.
The advanced module design also reduces thermal resistance and stray inductance through optimized packaging and direct bonded copper (DBC) substrates, enabling cooler operation and improved long-term reliability under high-load conditions.
From a market perspective, this design win highlights the continued relevance of hybrid IGBT + SiC module architectures in utility-scale applications, where cost-performance optimization remains critical. While full-SiC solutions are gaining traction, hybrid modules offer a balanced approach—delivering efficiency gains without significantly increasing system cost.
Strategically, this collaboration strengthens onsemi’s position in the fast-growing renewable energy and grid infrastructure markets, where demand is being driven by large-scale solar deployment, energy storage expansion, and the increasing power requirements of AI-driven data centers.
Original – onsemi
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Taiwan Semiconductor has expanded its silicon carbide portfolio with new automotive-grade 1200 V SiC Schottky diodes in 1 A and 2 A variants, targeting compact, high-efficiency power conversion applications.
The newly introduced devices are offered in SOD-128 packages, positioning them among the smallest high-voltage SiC diodes available in the market. This enables significant board space reduction while maintaining high performance in low-current, high-voltage applications.
The diodes deliver low forward voltage (maximum 1.5 V), very low leakage current, and fast switching characteristics, minimizing both conduction and switching losses. With a maximum junction temperature of 175°C and AEC-Q qualification, they are designed for high-reliability environments, including automotive and industrial systems.
Key application areas include auxiliary power supplies, gate driver bias circuits, snubber networks, PFC stages in low-power designs, and high-frequency flyback converters. Their compact form factor is particularly advantageous in space-constrained designs such as EV subsystems and distributed power architectures.
From a market perspective, this launch reflects a growing trend toward miniaturized wide-bandgap components addressing niche but critical functions in power systems. While much of the SiC market focuses on high-current devices, Taiwan Semiconductor is targeting the underserved low-current, high-voltage segment—supporting increasing system complexity in automotive electrification, AI power delivery, and industrial electronics.
By combining automotive qualification with ultra-compact packaging, the company strengthens its position in differentiated SiC niches where size, efficiency, and reliability are key design drivers.
Original – Taiwan Semiconductor
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Micro Commercial Components has introduced its SICW Series Gen4 silicon carbide Schottky barrier rectifiers, targeting improved efficiency, thermal performance, and reliability in high-voltage power conversion applications.
Built on MCC’s Gen4 Junction Barrier Schottky (JBS) SiC technology, the SICW Series delivers zero reverse recovery behavior combined with a low forward voltage drop between 1.45 V and 1.6 V. This significantly reduces both switching and conduction losses, making the devices well-suited for high-frequency power systems.
The product family covers voltage ratings from 650 V to 1200 V and current ranges from 10 A to 40 A, supporting a wide range of industrial, transportation, and energy applications. A positive temperature coefficient of forward voltage enables stable current sharing in parallel configurations, while a maximum junction temperature of 175°C enhances robustness under demanding thermal conditions.
From a packaging perspective, the devices are offered in TO-247AB and TO-247AD formats with large heat-dissipation tabs, enabling efficient thermal management and simplified system integration.
From a market standpoint, this release aligns with ongoing industry trends toward higher switching frequencies and increased power density, particularly in industrial drives, EV infrastructure, and renewable energy systems. By improving efficiency and reducing cooling requirements, MCC’s Gen4 SiC rectifiers support system-level cost optimization and compact design—key factors as electrification and AI-driven power demand continue to scale.
Original – Micro Commercial Components
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Infineon Technologies AG and DG Matrix have announced a strategic collaboration to enhance power conversion efficiency for AI data centers and industrial electrification through advanced solid-state transformer (SST) technology.
As part of the partnership, DG Matrix will integrate Infineon’s latest-generation silicon carbide (SiC) devices into its Interport™ multi-port SST platform. This integration is expected to improve efficiency, power density, and reliability while strengthening DG Matrix’s semiconductor supply chain as it scales deployments globally.
Solid-state transformers represent a key shift from traditional copper- and iron-based systems, enabling significantly smaller and lighter designs—up to 14 times smaller and 40 times lighter—while offering faster deployment and enhanced control of voltage, power quality, and energy flow. These systems are increasingly critical for connecting medium-voltage grids directly to low-voltage applications such as AI data centers, EV charging infrastructure, renewable energy systems, and industrial microgrids.
From a market perspective, this collaboration highlights the growing importance of SiC in next-generation grid infrastructure. Infineon estimates the semiconductor market for SSTs could reach up to $1 billion within the next five years, driven by rising electricity demand from AI and electrification trends.
The partnership also reflects a broader industry shift toward system-level innovation, where advanced semiconductor technologies like SiC are enabling new power architectures. DG Matrix’s multi-port SST design, combined with Infineon’s SiC roadmap, positions both companies to capitalize on emerging high-voltage, high-efficiency infrastructure requirements.
Looking ahead, the two companies plan continued alignment on future SiC developments as DG Matrix expands toward higher-voltage platforms and larger-scale deployments, supporting the transition to more efficient and resilient global power systems.
Original – Infineon Technologies
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ROHM Co., Ltd. announced new three-phase inverter reference designs alongside its participation at APEC 2026, reinforcing its strategy to accelerate adoption of SiC and GaN power technologies across automotive, industrial, and AI infrastructure applications.
ROHM released three reference designs—REF68005, REF68006, and REF68004—supporting three-phase inverter circuits based on its EcoSiC™ molded modules, including HSDIP20, DOT-247, and TRCDRIVE pack™. These designs target power levels up to 300 kW and are intended to reduce engineering effort in evaluation, gate driving, and thermal design, which are key barriers to broader SiC adoption. By providing ready-to-use design data, ROHM enables faster system development and easier integration of SiC modules into high-power applications such as traction inverters and industrial drives.
Complementing this, ROHM is showcasing its latest power solutions at APEC 2026 in San Antonio, highlighting advancements in both SiC and GaN technologies. The company is focusing on key growth segments including AI data centers, electric vehicles, and industrial power systems.
For AI infrastructure, ROHM is demonstrating EcoSiC™ modules in HSDIP20 and DOT-247 packages for server power supplies, as well as 650V EcoGaN™ HEMTs integrated into power solutions for high-efficiency data center applications. A joint demonstration with Tamura Corporation features gate driver modules optimized for ROHM’s SiC devices, targeting UPS systems, PV inverters, and energy storage.
In automotive applications, ROHM is emphasizing its TRCDRIVE pack™ for traction inverters, along with compact SiC modules for onboard chargers and auxiliary systems, addressing increasing demand for higher efficiency and power density in electrified powertrains.
The company is also presenting system-level demonstrations, including a three-phase BLDC motor drive platform and LogiCoA™ hybrid analog-digital power solutions, illustrating its broader push toward integrated system solutions beyond discrete devices.
From a market perspective, the combination of reference designs and live system demonstrations highlights a key industry trend: moving from component-level innovation to system-level enablement. By lowering design complexity and accelerating time-to-market, ROHM is positioning itself to capture growth in high-power applications driven by electrification and AI infrastructure.
Original – ROHM
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Microchip Technology announced its new BZPACK mSiC® power modules, designed to meet stringent high humidity, high voltage, high temperature reverse bias (HV-H3TRB) standards for demanding power conversion environments.
The BZPACK modules are available in multiple configurations, including half-bridge, full-bridge, three-phase and PIM/CIB topologies, providing flexibility for designers to optimize system performance, cost and architecture across industrial and renewable energy applications.
The modules are tested to exceed the 1,000-hour HV-H3TRB standard, ensuring robust long-term reliability in harsh environments. With a Comparative Tracking Index of 600 V, stable RDS(on) across temperature ranges and substrate options such as aluminum oxide and aluminum nitride, the devices offer strong insulation, effective thermal management and durability.
To simplify manufacturing and integration, the BZPACK modules feature a compact, baseplate-less design with press-fit, solderless terminals and optional pre-applied thermal interface material. These features help reduce assembly complexity, improve manufacturing consistency and enable easier multi-sourcing through industry-standard footprints. The modules are also pin-compatible to support design flexibility.
The portfolio is supported by Microchip’s MB and MC families of mSiC MOSFETs, which are available for industrial and automotive applications, including AEC-Q101 qualified options. These devices support standard gate-source voltages of 15 V or higher and are offered in common industry packages such as TO-247-4.
The MC family additionally integrates a gate resistor, improving switching control and stability in multi-die module configurations while maintaining low switching energy. The modules are designed to reduce the risk of field failures associated with moisture-induced leakage or breakdown, supporting reliable operation in high-stress environments.
Original – Microchip Technology
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ROHM announced the start of online sales for new silicon carbide molded modules, including the TRCDRIVE pack™, HSDIP20 and DOT-247 series. The new modules are designed to promote wider adoption of high-efficiency SiC-based power conversion technologies as global demand for energy-efficient power systems continues to grow.
The products are available for online purchase through distributors such as DigiKey and Farnell.
The TRCDRIVE pack™ is a 2-in-1 SiC molded module designed for traction inverters in electric vehicles with power levels up to 300 kW. It integrates ROHM’s fourth-generation SiC MOSFETs with low on-resistance, enabling approximately 1.5× higher power density compared with conventional SiC molded modules. The module also features a terminal layout that allows the gate driver board to be connected from the top, simplifying assembly and reducing installation time. Example applications include xEV traction inverters.
The HSDIP20 module is available in 4-in-1 and 6-in-1 configurations and targets applications such as xEV onboard chargers, EV charging stations, server power supplies and AC servo systems. The lineup includes six models rated at 750 V and seven models rated at 1200 V. The modules integrate the essential power conversion circuits into a compact package, reducing design complexity and enabling smaller power conversion systems.
The DOT-247 module is a 2-in-1 SiC module designed primarily for industrial applications such as photovoltaic inverters and uninterruptible power supply systems. It retains the versatility of the widely used TO-247 package while delivering higher power density. The module supports both half-bridge and common-source circuit configurations and helps reduce component count and PCB area in power conversion circuits.
Applications for the new SiC modules include electric vehicle systems such as onboard chargers, DC-DC converters and electric compressors, as well as industrial equipment including EV charging stations, V2X systems, PV inverters, power conditioners and AI data center power systems.
Original – ROHM
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Navitas Semiconductor announced two new package options for its 5th generation GeneSiC silicon carbide MOSFET platform, introducing a top-side cooled QDPAK package and a low-profile TO-247-4L package with asymmetrical leads. The new devices target applications requiring high power density and improved thermal performance, including AI data centers and energy infrastructure systems.
The devices are based on the company’s fifth-generation trench-assisted planar silicon carbide MOSFET technology. This architecture delivers a 35% improvement in the RDS(on) multiplied by gate-drain charge figure of merit and approximately a 25% improvement in the gate-drain to gate-source charge ratio. Combined with a stable gate threshold voltage greater than 3 V, the design helps prevent parasitic turn-on and enables predictable switching behavior in high-power systems.
The new QDPAK package features a top-side cooling structure designed to address thermal limitations of traditional PCB-based cooling approaches. Heat is transferred directly through the top of the package to a heatsink, improving thermal efficiency and enabling smaller system footprints. The package also reduces parasitic inductance, supporting cleaner switching at high frequencies. It provides a compact footprint of approximately 15 mm by 21 mm with a height of 2.3 mm and includes design features that extend creepage distance while supporting applications up to 1000 VRMS.
Navitas also introduced a low-profile TO-247-4L through-hole package designed for systems where vertical space is constrained. By reducing the height of the package on the PCB, the design enables higher power density compared with conventional TO-247-4 packages. The device also incorporates asymmetrical leads, including thinner leads for the gate and Kelvin-source connections, to improve manufacturing tolerances during PCB assembly.
The new packaging options are intended for applications such as AI data center power supplies and high-performance power conversion systems where compact form factors and efficient thermal management are essential.
The initial products include four 1200 V SiC MOSFETs with on-resistance values of 6.5 mΩ and 12 mΩ, offered in both QDPAK and TO-247-4L packages. Samples are available for customer evaluation.
Original – Navitas Semiconductor
