Semiconductor Power Devices: Volume 1: Physics, Technology and Design of Power Devices

Semiconductor Power Devices: Physics, Technology, and Design is the first volume of the fully updated two-part reference that has long been considered one of the most authoritative works in power semiconductor engineering. Published by Springer, this edition reflects the dramatic evolution of the industry toward wide-bandgap materials, higher power densities, and reliability-driven design.

This volume focuses on the physical and technological foundations that underpin modern power devices. It guides the reader from semiconductor material properties and pn-junction physics through the operating principles of diodes, thyristors, MOSFETs, and IGBTs, building a deep understanding of how structure determines performance. Rather than treating components as abstract circuit elements, the book connects device physics directly to switching behavior, losses, breakdown phenomena, and thermal effects — offering insight that is essential for both device developers and system-level engineers.

Significant updates distinguish this edition from earlier versions. It includes expanded and dedicated treatment of SiC and GaN technologies, addressing their material-specific design requirements and performance characteristics. Cooling concepts, advanced packaging approaches, and reliability considerations are integrated into the discussion, reflecting the reality that device performance today is inseparable from thermal management and module architecture. A newly added chapter on cosmic ray-induced failures highlights the growing importance of robustness in high-voltage and automotive applications.

The authority of the book stems from its authorship. Josef Lutz, known for inventing the Controlled Axial Lifetime (CAL) diode, brings decades of academic and industrial insight. Heinrich Schlangenotto contributes deep expertise in device physics and dynamic behavior, including pioneering work on fast recovery diodes. Uwe Scheuermann adds more than 30 years of practical module and packaging experience from Semikron, while Rik De Doncker of RWTH Aachen University brings system-level perspective from high-power converter innovation.

The result is a rigorous yet application-aware reference that serves advanced students, practicing engineers, and researchers alike. For anyone working with silicon, SiC, or GaN power devices — particularly in automotive, renewable energy, industrial drives, or high-voltage conversion — this volume offers the depth needed to truly understand how modern power semiconductors are designed, optimized, and made reliable.