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Efficient Power Conversion (EPC) has introduced four new evaluation boards—EPC91128, EPC91129, EPC91130, and EPC91131—designed to accelerate the development of next-generation three-phase brushless DC (BLDC) motor drive systems using gallium nitride (GaN) technology.
The compact, high-performance inverter platforms are built around EPC’s integrated EPC23108, EPC23109, EPC23110, and EPC23111 ePower™ Stage ICs. The boards support input voltages ranging from 10 V to 80 V and output currents up to 29 ARMS, providing developers with a flexible platform for rapid evaluation in applications such as robotics, industrial automation, e-mobility auxiliary systems, and battery-powered equipment.
The evaluation boards integrate key inverter functions including gate drivers, current sensing, voltage sensing, housekeeping power supplies, temperature monitoring, and protection features. This high level of integration enables engineers to quickly prototype high-efficiency motor drive systems while minimizing the need for additional external circuitry. The platforms are optimized to reduce torque ripple and acoustic noise while providing flexible dv/dt control for application-specific tuning.
All four evaluation boards support complementary PWM and single-PWM control schemes, depending on the selected variant. They are also compatible with controller platforms from Microchip, Texas Instruments, STMicroelectronics, and Renesas, allowing developers to integrate them easily into existing motor-control development environments.
A key feature of the EPC91128–EPC91131 platforms is their demonstrated performance in practical motor-drive testing. During validation using a 48 V DC bus and switching frequencies of up to 100 kHz, the EPC91128 and EPC91129 boards successfully drove a 3 kW BLDC motor while delivering 15 ARMS continuous phase current without a heatsink. With a heatsink and natural-convection cooling, continuous current capability increased to 20 ARMS. Under pulsed operating conditions, the boards supported peak currents of up to 29 ARMS, demonstrating the ability of the integrated ePower™ Stage IC architecture to manage demanding dynamic motor loads.
The EPC91130 and EPC91131 variants achieved 10 ARMS continuous operation without a heatsink and 15 ARMS with heatsink assistance. Under pulsed conditions, these boards supported peak currents of up to 18 ARMS. According to EPC, the test results demonstrate that the compact GaN-based inverter platforms can sustain meaningful power levels suitable for industrial-grade motor control evaluation while maintaining thermal performance and switching efficiency at elevated switching frequencies.
Alex Lidow, CEO of EPC, stated that the new inverter platforms are intended to make GaN technology more accessible for high-performance motor-drive applications. He noted that as designers increasingly pursue higher efficiency, faster switching frequencies, and more compact power electronics systems, the new evaluation boards can help accelerate the transition from silicon-based solutions to GaN across robotics, industrial automation, and battery-powered motion systems.
Marco Palma, Vice President of Motor Drive Marketing and System Engineering at EPC, highlighted that the new platforms provide engineers with ready-to-use environments for evaluating the latest ePower™ Stage ICs under real motor-drive operating conditions. He added that the integrated sensing, protection, and control features allow developers to focus on system optimization rather than spending time designing the underlying power stage.
To support product development, EPC provides complete design resources for the new evaluation boards, including schematics, bill of materials (BOM), and Gerber files.
Original – Efficient Power Conversion
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Toshiba Electronics Europe GmbH has announced the introduction of three new 40 V N-channel power MOSFETs for automotive applications. The new devices include the XPMR5904PB, which is available immediately, and the XPMR7404PB and XPMR8504PB, which are scheduled for release shortly. The products utilize Toshiba’s newly developed SOP Advance(EWF) package and are designed for demanding automotive systems such as inverters, semiconductor relays, load switches, and motor drives.
A key feature of the new devices is the adoption of the SOP Advance(EWF) package, which incorporates a post-less internal structure. Instead of using conventional internal posts, the package connects the semiconductor chip to the external leads through a copper clip. This design reduces the resistance of the current path by eliminating internal posts and optimizing current flow within the package.
The devices also employ a source-coupled structure that connects source terminals on the reverse side of the package, increasing the contact area with the PCB land pattern. This approach expands the available chip mounting area while enhancing current-carrying capability.
As a result, the XPMR5904PB achieves a continuous drain current rating of 180 A, representing a 20% increase compared with existing products that use similar SOP Advance(WF) packaging.
Toshiba has also improved key electrical and thermal performance characteristics to meet the requirements of high-current automotive applications. Compared with the company’s existing XPHR7904PS device, the XPMR5904PB delivers approximately 25% lower drain-source on-resistance (RDS(ON)) and approximately 38% lower channel-to-case thermal impedance (Zth(ch-c)). These improvements help reduce power losses and support higher system efficiency.
To enhance manufacturing quality and inspection reliability, the SOP Advance(EWF) package incorporates a wettable flank structure. This surface-mount package design improves visibility of solder joints, allowing automated optical inspection (AOI) systems to more easily verify soldering quality during production. The feature supports automated manufacturing processes while helping manufacturers meet the stringent quality and reliability requirements of the AEC-Q101 automotive qualification standard.
The introduction of the new MOSFETs expands Toshiba’s automotive power semiconductor portfolio and provides additional options for designers developing high-performance automotive power systems. The devices are intended to support applications requiring higher current capability, improved thermal management, and enhanced manufacturing reliability.
Toshiba stated that it will continue expanding its power semiconductor portfolio and developing advanced automotive MOSFET technologies to support a broad range of vehicle applications while contributing to ongoing electrification and carbon reduction initiatives.
Original – Toshiba
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SemiQ Inc. will present its latest silicon carbide (SiC) power module developments at PCIM Europe 2026, including an expanded QSiC™ Dual3 MOSFET module family featuring new high-thermal-performance configurations with aluminum nitride (AlN) substrates and pre-applied thermal interface material (TIM).
The company will showcase its latest technologies at Alfatec’s booth (Hall 4A, Booth 110) during the exhibition, which takes place from June 9 to 11, 2026, at Messe Nürnberg in Nuremberg, Germany.
Designed to address the increasing power density and thermal management requirements of AI data centers, high-power industrial systems, solar photovoltaic installations, and electric vehicle applications, the expanded portfolio combines flexible module designs with high-efficiency silicon carbide technology.
Among the featured products will be SemiQ’s latest QSiC™ Gen3 SiC modules, which deliver a 30% reduction in both specific on-resistance (RONsp) and turn-off energy losses (EOFF) compared with previous generations. According to the company, these improvements help reduce cooling requirements and switching losses in applications such as EV charging infrastructure, energy storage systems, and industrial motor drives.
A key highlight of the exhibit will be the expanded QSiC Dual3 module family. These 1200 V half-bridge MOSFET modules are designed to support the development of high-efficiency, high-power-density power converters. The latest additions to the family incorporate aluminum nitride substrates and pre-applied thermal interface material to enhance thermal performance.
SemiQ will also display its S3 module family, which includes a 608 A half-bridge module featuring an ultra-low RDS(on) of 2.4 mΩ and a junction-to-case thermal resistance (RθJC) of only 0.07°C/W.
The company’s SOT-227 module lineup will also be featured, offering five module options with RDS(on) values of 7.4 mΩ, 14.5 mΩ, and 34 mΩ. These modules are targeted at applications including server power supplies, battery charging systems, and photovoltaic inverters.
In addition, visitors will be able to explore SemiQ’s B2T1 six-pack module family, which offers RDS(on) values ranging from 19.5 mΩ to 82 mΩ. These modules are designed to minimize parasitic effects in motor drive systems and advanced AC-DC converter applications.
The company will also present its B3 full-bridge modules, which provide current ratings of up to 120 A and RDS(on) values as low as 8.6 mΩ. These products are intended to maximize power density in high-voltage DC-DC conversion systems.
“These SiC technologies directly address the challenges faced by those implementing AI infrastructure,” said Dr. Timothy Han, President of SemiQ. “By improving efficiency and addressing the escalating power demands of datacenters across key application areas, we are expanding the potential for AI to scale sustainably.”
SemiQ’s PCIM 2026 exhibit will focus on demonstrating how its latest silicon carbide module technologies support higher efficiency, improved thermal management, and increased power density across a range of demanding applications, including AI infrastructure, renewable energy systems, industrial automation, and electric mobility.
Visitors can view the company’s latest products and speak with technical representatives at Booth 110 in Hall 4A throughout the exhibition.
Original – SemiQ
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PANJIT has announced its participation in electronica Shanghai 2026, where the company will highlight its latest power semiconductor technologies centered on two key focus areas: automotive electronics and AI server applications. The exhibition will serve as a platform for PANJIT to present its vision for high-efficiency and high-reliability power electronics solutions supporting next-generation mobility and advanced computing systems.
In the automotive sector, PANJIT will showcase a comprehensive portfolio that includes 48 V power solutions, automotive-grade protection devices, and advanced silicon carbide (SiC) technologies. These products are designed to support a wide range of vehicle applications, including electronic power steering (EPS), battery management systems (BMS), powertrain systems, and advanced driver assistance systems (ADAS).
For AI server applications, the company will present its latest Wide Safe Operating Area (SOA) high-performance MOSFETs and high-density packaging technologies developed for hot-swap applications. These solutions are designed to help reduce operational losses while enhancing system reliability by mitigating potential failure risks in high-performance computing environments.
To provide visitors with a hands-on view of its technologies, PANJIT will feature a dedicated dynamic testing area at its booth. Through live instrument demonstrations, attendees will be able to observe the thermal performance and heat dissipation capabilities of the company’s power semiconductor products under real operating conditions.
In addition, PANJIT will display a range of advanced packaging technologies, including Full-Cu Clip, Dual-Side Cooling (DSC), and Side-Wettable Flanks (SWF). These packaging solutions are designed to address the increasing requirements for power density, thermal management, and reliability in both automotive and AI infrastructure applications.
According to the company, high reliability, high power density, and advanced packaging technologies will be among the key highlights of its presence at the exhibition. PANJIT’s technical team will be available throughout the event to discuss application requirements and provide insights into the company’s latest developments in power semiconductor technology.
electronica Shanghai 2026 will be held from July 1 to July 3, 2026, at the Shanghai New International Expo Centre (SNIEC). PANJIT will exhibit at Booth N5.810.
Original – PANJIT
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ROHM Co., Ltd. has announced that its 750 V silicon carbide (SiC) MOSFET has been adopted in a battery backup unit (BBU) designed for AI server power supplies. The selection comes as AI server power systems transition toward higher-voltage architectures and high-voltage direct current (HVDC) power distribution to support the growing demands of generative AI applications.
As AI accelerators continue to deliver increasing levels of performance and the adoption of generative AI expands, power consumption within data centers is rising significantly. To reduce transmission losses and improve overall efficiency, the industry is increasingly moving toward HVDC power architectures. Within these systems, BBUs and capacitor units (CUs), which provide power compensation at the server-rack level, are becoming increasingly important for protecting systems and safeguarding large volumes of data during power outages, voltage fluctuations, and other abnormalities.
The adopted device is ROHM’s SCT4013DLL, a 750 V SiC MOSFET used in the power supply section of a ±400 V AI server power architecture. By utilizing the inherent characteristics of SiC technology, the device offers a maximum junction temperature (Tj) of 175°C, enabling stable operation in BBU applications where heat generation increases due to higher operating voltages and greater power density.
ROHM noted that next-generation 800 VDC power architectures typically deliver approximately 560 V to the battery pack inside the BBU. As a result, the company’s 750 V-rated SiC MOSFETs are also suitable for deployment in these emerging power systems.
HVDC power supplies for next-generation AI servers require backup systems capable of handling high voltages and large currents with rapid response times while minimizing power losses during abnormal operating conditions. To address these requirements, SiC power devices that combine high-voltage capability, low-loss operation, and high-temperature tolerance are expected to play a central role in future power control systems.
As demand continues to grow across AI server and data center markets, ROHM plans to further expand the development and supply of power devices based on SiC, gallium nitride (GaN), and silicon technologies. The company also intends to support higher power efficiency through solutions that integrate these power devices with analog ICs and related technologies.
Original – ROHM
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Texas Instruments Incorporated (TI) has announced the appointment of Julie Knecht as its next Chief Financial Officer, effective August 1, 2026. She will succeed Rafael Lizardi, who is retiring after 25 years with the company. Lizardi will continue to support TI in an advisory capacity through August 31, 2026, to assist with the leadership transition.
“I want to thank Rafael for his many years of leadership and dedication to TI,” said Haviv Ilan, Chairman, President and Chief Executive Officer of Texas Instruments. “His focus on disciplined capital allocation, including our investments in 300mm manufacturing capacity, and commitment to return all free cash flow to shareholders have positioned our company for continued long-term growth and value creation.”
Ilan added, “We are pleased to promote Julie to CFO from within our finance team. Rafael and Julie have worked together closely for more than a decade, and they share a commitment to financial and operational excellence. She is a demonstrated leader with a strong track record of financial leadership, strategic planning and business acumen, and I am excited to welcome Julie to our leadership team.”
Reflecting on his tenure, Lizardi said, “I am proud to have served as CFO during a period when our investments in our business and relentless focus on driving free cash flow per share growth drove sustained value for TI’s shareholders. It has been a privilege to be a part of TI’s leadership team and dedicate my career to helping shape TI into the global semiconductor leader it is today.”
Knecht commented on her appointment, stating, “I am honored to be appointed as the company’s next CFO. Having been part of this company for more than 25 years, I appreciate TI’s high-performance culture and long-standing commitment to technology leadership. I look forward to building on our success as we continue to execute our strategy and generate long-term value for our customers, employees and shareholders.”
Texas Instruments also announced that it plans to release its second-quarter 2026 financial results and host a conference call on July 22, 2026, at 3:30 p.m. Central Time.
Knecht joined Texas Instruments in 1999 and has held a range of finance and accounting leadership positions during her tenure. Since 2021, she has served as Chief Accounting Officer and Vice President of Accounting and Tax. Prior to that, she spent more than a decade as Vice President of Accounting. She holds a bachelor’s degree in accounting from Texas A&M University, an MBA from the University of Texas at Austin, and is a licensed Certified Public Accountant.
Original – Texas Instruments
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Vishay Intertechnology, Inc. has introduced the VS-HOT200C080, a new 200 A power module designed to reduce board space requirements and improve efficiency in 48 V traction inverters for light electric vehicles (LEV) and belt-start generator/recuperation systems used in mild-hybrid electric vehicles (MHEV).
For these applications, the Vishay Semiconductors VS-HOT200C080 can reduce board space requirements by up to 15% compared with conventional discrete-component solutions. The integrated module also incorporates MOSFETs featuring an on-resistance of 0.45 mΩ, helping to reduce conduction losses by 32% compared to competing solutions.
The VS-HOT200C080 integrates 80 V MOSFETs in a half-bridge configuration, along with a shunt resistor for current sensing, bypass capacitors to improve switching performance, and an NTC thermistor for temperature monitoring. These components are housed within an insulated 30 mm × 22.8 mm transfer-molded FlatPAK HC0 package that incorporates an electrically isolated exposed direct bonded copper (DBC) substrate.
According to Vishay, the module’s transfer-mold technology supports reliable operation across a wide temperature range from -55°C to +175°C, particularly under power-cycling conditions. The device is designed to meet the demanding reliability requirements of the AQG-324 qualification standard.
The HC0 package incorporates signal pins and power tabs positioned at different heights, enabling designers to separate power and signal PCBs. This arrangement simplifies system design and routing while providing the option to stack the signal and power boards to further reduce overall space requirements.
Samples and production quantities of the VS-HOT200C080 are available immediately, with lead times currently quoted at 13 weeks.
Original – Vishay Intertechnology
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JEDEC Solid State Technology Association has announced the publication of two new documents developed by its JC-70.2 Silicon Carbide Subcommittee: JEP203, Guideline for Short Circuit Evaluation in Power Conversion Transistors, and JEP204, Catalog of Stress Procedures for Silicon Carbide Devices for Power Electronic Conversion. Both documents are available for free download from the JEDEC website.
The newly released publications are intended to support the growing adoption of silicon carbide (SiC) power semiconductors across a range of power electronics applications.
JEP203: Guideline for Short Circuit Evaluation in Power Conversion Transistors provides guidance for assessing the short-circuit capability of power MOSFETs. The document is designed to assist engineers in improving protection design, enhancing testing consistency, and strengthening system robustness in applications such as electric vehicles, industrial motor drives, and energy infrastructure systems.
JEP204: Catalog of Stress Procedures for Silicon Carbide Devices for Power Electronic Conversion serves as a comprehensive reference covering reliability, environmental, and ruggedness stress procedures for SiC power devices. The publication provides qualification engineers and device manufacturers with a common framework for evaluating long-term reliability and performance, supporting greater industry alignment and increased confidence in next-generation power electronics technologies.
“JEP203 and JEP204 are landmark guidelines for SiC power conversion, enabling the industry to confidently adopt silicon carbide in demanding power electronic applications. JEP204, in particular, provides a comprehensive framework of best practices for stressing SiC power devices, offering significant value to both users and suppliers. Together, these documents reflect years of industry collaboration and mark a historic milestone in advancing the reliability, safety, and standardization of SiC technology,” said Dr. Donald Gajewski, Senior Director of Reliability Engineering at Wolfspeed and Chair of the 702_1 Task Group.
Dr. Thomas Aichinger, Senior Principal Engineer for SiC Technology Development at Infineon Technologies and Vice-Chair of the JC-70.2 Subcommittee, added: “As the power electronics industry accelerates its transition to silicon carbide, standardization is the catalyst for confidence and scale. The release of JEP203 and JEP204 delivers exactly that: clear guidelines for short-circuit protection design and a unified stress-test framework for long-term SiC reliability. These new documents give engineers and manufacturers the tools to design safer systems, validate long-term reliability, and align industry practices.”
The publication of JEP203 and JEP204 represents the latest effort by JEDEC to establish common evaluation methodologies and reliability frameworks for silicon carbide technologies used in power electronic conversion applications.
Original – JEDEC
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Navitas Semiconductor announced its participation in NVIDIA’s Partner Ceremony held on May 29, 2026, at the Taipei Nangang Exhibition Center. The event brought together ecosystem partners supporting the NVIDIA AI Factory MGX™ platform, highlighting industry collaboration aimed at advancing next-generation AI data centers based on emerging 800 VDC rack architectures.
As part of the NVIDIA AI Factory MGX™ Ecosystem Showcase at COMPUTEX 2026 in Taipei, taking place from June 2–5, Navitas is demonstrating its 800 V-to-6 V DC-DC power delivery board (PDB). Powered by the company’s GaNFast™ technology, the PDB eliminates the need for a traditional 48 V intermediate bus converter (IBC) stage within compute server trays, enabling greater system efficiency, reliability, and board-space utilization.
The power delivery board incorporates sixteen 650 V, 11 mΩ GaNFast FETs in the company’s latest DFN8×8 dual-cooled package. The design targets 97.5% peak efficiency while operating at a switching frequency of 1 MHz and achieving a power density of 2,100 W/in³. The ultra-low-profile design is approximately 20% thinner than a mobile phone, allowing close integration with GPU boards to enhance transient response and improve power distribution efficiency.
“As AI workloads continue to scale and drive unprecedented demand for compute, power delivery has become one of the most critical challenges in enabling next-generation gigawatt AI factories,” said Chris Allexandre, President and CEO of Navitas. “Through our collaboration with NVIDIA within the MGX™ ecosystem, Navitas is delivering GaN and SiC power technologies that enable megawatt-scale AI server racks with higher power density, a smaller system footprint, and improved thermal performance, helping accelerate the transition to more efficient and scalable AI infrastructure.”
Navitas also highlighted its portfolio of wide-bandgap power technologies designed to support next-generation AI factory infrastructure. The company’s GeneSiC™ silicon carbide (SiC) solutions address power delivery requirements from the electrical grid to AI compute racks, supporting applications such as solid-state transformers (SSTs) with 2300 V and 3300 V SiC power modules, as well as high-power three-phase power supply units based on its fifth-generation 1200 V SiC MOSFET technology.
According to the company, these SiC technologies contribute to improved efficiency, increased power density, and enhanced system reliability in large-scale AI data center deployments.
Navitas’ GaNFast technology is designed to provide the high-frequency, high-efficiency DC-DC power conversion required to support increasing power demands from AI accelerators and GPUs. By leveraging the switching performance of gallium nitride devices, the company’s solutions enable MHz-frequency operation, higher power density, and faster transient response, facilitating more efficient power delivery from the rack level to the processor level.
Through its portfolio of GaN and SiC technologies, Navitas continues to collaborate with NVIDIA within the MGX ecosystem to support open and modular AI infrastructure architectures and contribute to the development of next-generation AI factory platforms.
Original – Navitas Semiconductor
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GlobalFoundries has announced a strategic partnership with the U.S. Department of Energy’s Genesis Mission, an initiative focused on accelerating scientific discovery through artificial intelligence and advanced computing.
Under the agreement, GlobalFoundries will provide Genesis Mission researchers with access to its U.S. manufacturing platform and design enablement resources, creating a pathway from AI-enabled chip design to prototype silicon. The collaboration will be led by GF Labs, the company’s advanced research and development organization.
The partnership is intended to support researchers from National Laboratories, universities, industry organizations and startups by providing access to semiconductor manufacturing capabilities and design tools needed to transform research concepts into functional devices.
According to GlobalFoundries, the initiative aims to connect scientific research, academic institutions and industry through a common framework that supports the development and fabrication of advanced semiconductor technologies.
“American science is generating extraordinary ideas in AI and advanced computing. What’s been missing is the bridge from lab to fab,” said Tom Caulfield, Executive Chairman of GlobalFoundries. “By bringing our U.S. manufacturing platform, our PDKs and our multi-project wafer program to the Genesis Mission, we can give researchers a real path from concept to working silicon — and help the National Labs, universities and industry pull in the same direction.”
As part of the collaboration, Genesis Mission-supported research teams will gain access to GlobalFoundries’ semiconductor technology platforms, including process design kits (PDKs), device models and design enablement resources to support AI-driven semiconductor development.
The partnership also includes access to GlobalFoundries’ multi-project wafer (MPW) program, providing researchers with a route to prototype fabrication and enabling the transition from design concepts to manufactured silicon devices.
In addition, GF Labs will support the conversion of research outcomes into functional prototypes and pre-commercial semiconductor designs.
The agreement also contemplates collaboration on next-generation technologies, including silicon photonics for data center applications and quantum computing technologies intended to support advancements in quantum systems discovery.
Original – GlobalFoundries
