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Nexperia has announced the launch of its 1200 V silicon carbide (SiC) MOSFET portfolio in QDPAK packaging, expanding its wide-bandgap (WBG) product family with a top-side cooled surface-mount solution designed for high-power-density and thermally demanding applications.
The new devices are engineered for high-efficiency, high-voltage power conversion systems, combining the electrical performance of Nexperia’s SiC technology with simplified thermal management and mechanical integration. The result is improved power density, higher output power capability, enhanced efficiency, and better thermal performance in compact system designs.
Available in both industrial-grade and automotive-qualified versions, the portfolio includes RDS(on) options of 17 mΩ, 30 mΩ, 40 mΩ, 60 mΩ, and 80 mΩ. This range provides a scalable QDPAK platform suitable for applications spanning high-power industrial systems to space-constrained designs with demanding thermal and mechanical requirements. The addition of QDPAK complements Nexperia’s existing package portfolio and offers designers greater flexibility in optimizing efficiency, thermal performance, and power density.
The QDPAK package addresses one of the key challenges in high-voltage power conversion systems: effective heat dissipation. By enabling a direct thermal path from the semiconductor die to the heatsink through the top side of the package, the design reduces dependence on the PCB as the primary heat-spreading medium. This allows the thermal management of the semiconductor and PCB to be handled more independently, simplifying overall system design.
According to Nexperia, compared with conventional D2PAK-7 packaging, top-side cooled solutions can deliver up to 3 kW higher output power while operating within comparable thermal limits. They can also provide approximately 40°C additional thermal headroom at the same power level. Building on the company’s existing X.PAK platform, the QDPAK package further extends power handling capability, enabling operation at roughly 3 kW higher power levels at similar case temperatures while offering around 23°C additional thermal headroom under comparable operating conditions.
The devices are well suited for a wide range of applications, including electric vehicle onboard chargers (OBCs), high-voltage DC-DC converters, EV charging infrastructure, photovoltaic inverters, uninterruptible power supplies (UPS), motor drives, and data center power systems. The package enables engineers to optimize both electrical and mechanical aspects of system design while addressing increasingly stringent power density requirements.
Gaetano Pignataro, Head of the SiC & IGBT Product Group at Nexperia, said that as wide-bandgap technologies continue to transform power conversion design, engineers are facing new thermal, mechanical, and efficiency challenges as systems become more compact, denser, and more power intensive. He noted that the company’s 1200 V SiC MOSFETs in QDPAK combine the performance advantages of its SiC technology with the thermal benefits of top-side cooling, providing designers with a practical and scalable solution for next-generation high-power applications.
Nexperia’s 1200 V SiC MOSFETs in QDPAK packaging combine the advantages of top-side cooled surface-mount technology with the electrical characteristics required for efficient high-voltage power conversion. The devices feature excellent RDS(on) temperature stability, supporting predictable conduction losses and reliable operation at elevated junction temperatures. Their low-inductance package design and controlled switching behavior contribute to efficient operation, while the inclusion of a dedicated Kelvin source pin enables faster commutation and improved switching control. This helps designers reduce ringing, manage electromagnetic interference (EMI), and improve overall switching performance in demanding power applications.
Original – Nexperia
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Efficient Power Conversion (EPC) has introduced the EPC91132, a compact three-phase brushless DC (BLDC) motor drive inverter reference design built around the company’s EPC33110 gallium nitride (GaN) three-phase power module. The new platform is designed to support next-generation motion control applications, including humanoid robot joints, robotic hands and wrists, and drone propulsion systems.
The EPC91132 features an ultra-compact design with a diameter of just 23 mm, making it suitable for space-constrained motor drive applications. At the core of the reference design is the EPC33110 GaN module, which leverages EPC’s monolithic GaN integrated circuit technology. The module integrates three half-bridges, gate drivers, bootstrap circuitry, and level shifters within a compact 6 mm × 6.5 mm QFN package.
Powered from a single 5 V supply, the EPC33110 supports operating voltages up to 80 V and offers a typical on-resistance of 11.7 mΩ. The module is compatible with both 3.3 V and 5 V logic inputs, providing flexibility for a variety of control architectures.
As robotic and drone systems continue to demand smaller, lighter, and more efficient power electronics, GaN technology is increasingly being adopted for motor drive applications. The ability to operate at switching frequencies above 100 kHz while minimizing both conduction and switching losses enables improved efficiency, faster dynamic response, higher control bandwidth, and reduced passive component size.
The EPC91132 supports a wide input voltage range from 10 V to 60 V DC and integrates all key functions required for a complete inverter system. These include an onboard microcontroller, regulated power supplies, DC bus voltage sensing, current sensing with integrated overcurrent protection, and a magnetic encoder for rotor position and speed control.
The monolithic architecture of the EPC33110 eliminates the need for discrete gate drivers, significantly reducing component count while simplifying PCB design and accelerating development. The platform can be programmed through a dedicated connector and supports real-time monitoring via an RS-485 communication interface.
To accommodate different application requirements, EPC designed the board with a flexible breakout-ring structure. When the outer ring is removed, the board maintains its 23 mm diameter, allowing direct integration into compact motor systems such as the Vertiq 23-06 drone motor platform.
Performance testing demonstrated that the EPC33110 module can deliver continuous phase currents of up to 11 ARMS in humanoid robotic joint applications operating at 48 V and switching frequencies up to 100 kHz. In drone motor evaluations, the system exhibited strong thermal performance, with only minimal temperature rise observed under airflow generated by the propeller.
According to EPC, the EPC91132 demonstrates how monolithic GaN integration can simplify inverter design while providing the switching speed, power density, efficiency, and thermal performance required by next-generation robotic and aerial mobility systems.
The new reference design is intended to provide engineers with a compact and highly integrated development platform for evaluating GaN-based motor drive architectures in advanced motion-control applications.
Original – Efficient Power Conversion
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Littelfuse, Inc. has named Future Electronics as its 2025 Americas High Volume Distributor of the Year, marking the second consecutive year that the distributor has received the recognition. The award highlights Future Electronics’ continued performance and collaboration with Littelfuse across the Americas region.
The High Volume Distributor of the Year award recognizes distribution partners that achieve outstanding results in areas including revenue growth, demand creation, design-win activity, and engagement across multiple product categories. According to Littelfuse, Future Electronics distinguished itself through its ability to expand its customer base, accelerate adoption of Littelfuse technologies, and successfully execute go-to-market initiatives.
Deepak Nayar, Senior Vice President and General Manager of the Electronics Business Unit at Littelfuse, congratulated the Future Electronics team on receiving the award for a second consecutive year. He noted that the company’s focus on growth, strong customer engagement, and effective execution across multiple product lines has continued to generate significant results, adding that Littelfuse values the partnership and the momentum created through the collaboration.
Future Electronics has continued to strengthen customer engagement while providing engineering and procurement teams with access to Littelfuse’s expanding portfolio of circuit protection, power control, and sensing solutions.
Anthony Alberga, Corporate Vice President at Future Electronics, said the company is honored to receive the recognition for the second year in a row. He noted that the award reflects the strength of the long-standing partnership between the two companies, the trust placed in Future Electronics by Littelfuse, and their shared commitment to delivering innovative, reliable, and industry-leading solutions and programs to customers worldwide. He also emphasized the contributions of the teams at both organizations in supporting customers, driving growth, and executing strategic initiatives.
Littelfuse evaluates recipients of its High Volume Distributor of the Year award using a comprehensive set of performance criteria, including sales growth, expansion of design-win opportunities, product portfolio mix, and the effectiveness of collaborative marketing activities.
The latest recognition reinforces the ongoing relationship between Littelfuse and Future Electronics as both companies continue to work together to support customers and expand market opportunities across the region.
Original – Littelfuse
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SemiQ Inc. has expanded its QSiC™ Dual3 family of silicon carbide (SiC) half-bridge MOSFET modules with the introduction of high-thermal-performance variants featuring aluminum nitride (AlN) substrates and pre-applied thermal interface material (TIM), alongside new 1700 V products. The expanded portfolio is designed to address the increasing power and thermal requirements of applications including AI data center power systems, energy storage infrastructure, solid-state transformers (SSTs), AC-DC converters, and industrial motor drives used in cooling and chiller systems.
The QSiC Dual3 family is designed to support the development of power converters with high conversion efficiency and power density. To further enhance performance, selected modules are available with an optional parallel Schottky barrier diode (SBD), which helps reduce switching losses and improve efficiency, particularly in high-temperature operating environments.
Several devices within the family offer RDS(on) values as low as 1 mΩ while supporting power levels up to 1150 A at 1200 V in a 62 mm × 152 mm package. The portfolio is intended to provide designers with a scalable platform for high-power applications requiring both efficiency and compact system design.
SemiQ developed the QSiC Dual3 series as a replacement option for conventional IGBT modules, enabling system upgrades with minimal redesign. To support reliability requirements, all MOSFET die used in the modules undergo wafer-level gate oxide burn-in testing at voltages exceeding 1450 V. The modules also feature low junction-to-case thermal resistance, enabling simplified thermal management and the use of smaller, lighter heatsinks at the system level.
According to SemiQ, the growing demand for continuous operation in data centers is increasing the importance of efficient power conversion. The company noted that the QSiC Dual3 platform is being deployed in both active front-end power systems and liquid chiller compressor drives, offering reductions in system size and weight compared with traditional silicon IGBT-based solutions while leveraging the efficiency benefits of SiC technology.
The newly introduced high-thermal-performance variants are also being designed into main AC-DC power converters and solid-state transformer architectures. These systems are intended to support direct conversion from medium-voltage AC distribution levels, including 13.8 kV and 35 kV, to high-voltage 800 V DC systems used in modern data center power architectures.
The latest additions to the portfolio are identified by the “-NT” suffix and incorporate AlN substrates together with pre-applied TIM. SemiQ has also expanded the family with new 1700 V devices, including the GCMX1P7C170S4B1(-NT) and GCMS1P7C170S4B1(-NT), which are expected to become available in the coming months.
The expanded lineup includes both standard and Schottky barrier diode-equipped configurations across multiple resistance ratings. New 1200 V modules are available with RDS(on) values of 1 mΩ, 1.4 mΩ, and 2 mΩ, while the new 1700 V variants feature an RDS(on) of 1.7 mΩ. All devices are offered in the S4B1 half-bridge package with AlN substrate and thermal interface material options.
Original – SemiQ
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ROHM Co., Ltd. has developed the new TSC3PAK package for silicon carbide (SiC) MOSFETs, designed to combine the thermal performance of conventional through-hole packages with the manufacturing advantages of surface-mount technology. Measuring 14.00 mm × 18.58 mm × 3.50 mm, the package is intended for power conversion applications in electric vehicles and industrial equipment where efficiency, reliability, and automated assembly are increasingly important.
The TSC3PAK package adopts a top-side heat dissipation structure, placing the heat transfer surface on the top of the package. This design enables automated surface-mount assembly while delivering heat dissipation performance comparable to conventional TO-247-4L through-hole packages. The new package is targeted at applications such as onboard chargers (OBCs) and electric compressors in xEVs, where higher power density and thermal performance are required.
As the adoption of SiC devices expands beyond traction inverters into auxiliary vehicle power systems, manufacturers are increasingly seeking solutions that improve charging performance and vehicle driving range. SiC technology is also gaining traction in industrial applications including photovoltaic inverters and high-performance server power supplies, where energy efficiency is a critical requirement.
Traditionally, SiC power devices have relied on through-hole packages due to their strong thermal performance under high-power operating conditions. However, these packages often require manual assembly processes and can limit efforts to reduce overall system height. Surface-mount SiC devices compatible with automated production lines are therefore becoming increasingly attractive. ROHM developed the TSC3PAK package to address these challenges by providing TO-247-class thermal performance in a surface-mount format.
The package incorporates ROHM’s proprietary groove structure, enabling a creepage distance of 6.66 mm. According to the company, this provides a class-leading creepage specification while maintaining compatibility with widely adopted industry designs. The package supports AC peak voltages of up to 1200 V in Pollution Degree 2 environments, helping simplify insulation design requirements in high-voltage systems while contributing to lower mounting costs and improved system reliability.
Products utilizing the TSC3PAK package are based on ROHM’s fourth-generation SiC MOSFET technology, which combines low ON-resistance with high-speed switching performance. These characteristics help reduce switching losses during power conversion, contributing to improved system efficiency and lower overall power consumption.
Mass production of devices featuring the new package began in June 2026. ROHM also provides simulation models for the entire product lineup through its website to support faster circuit design and evaluation. The company stated that it will continue expanding its SiC MOSFET portfolio to support higher performance, greater miniaturization, and improved reliability across automotive and industrial power electronics applications.
The initial TSC3PAK product lineup includes both consumer and AEC-Q101-qualified automotive devices. The range covers 750 V and 1200 V SiC MOSFETs with typical RDS(on) values ranging from 13 mΩ to 90 mΩ and maximum drain current ratings from 18 A to 102 A.
Target applications include automotive systems such as onboard chargers and electric compressors, as well as industrial equipment including photovoltaic inverters and server power supplies.
Original – ROHM
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GE Aerospace and Wolfspeed have signed a Memorandum of Understanding (MoU) to collaborate on accelerating the adoption of high-voltage silicon carbide (SiC) technologies across industrial, aerospace, and defense applications.
Under the agreement, the two companies plan to work together on the development of standards for high-voltage SiC power modules. The collaboration is intended to support a range of applications, including solid-state transformers, industrial electrification systems, and next-generation aerospace and defense platforms, while also contributing to greater supply chain resilience.
The companies believe that high-voltage SiC power modules can enable more compact, efficient, and reliable systems by reducing the number of series-connected devices required in high-power applications. This simplification can help lower overall system complexity while improving performance across a variety of end markets.
Kris Shepherd, President of Electrical Power at GE Aerospace, noted that both companies have independently contributed to several industry-first innovations and stated that the collaboration aims to support the development of a robust high-power silicon carbide value chain focused on enabling smaller, lighter, and more efficient high-voltage systems.
Robert Feurle, Chief Executive Officer of Wolfspeed, emphasized the growing demand for advanced power technologies driven by artificial intelligence, electrification, and defense applications. He stated that the partnership is focused on supporting domestic sourcing of high-power silicon carbide modules and enabling power systems that improve efficiency while reducing deployment timelines. He also highlighted the readiness of high-voltage silicon carbide technology to address increasing power delivery challenges across multiple industries.
GE Aerospace has recently achieved several milestones in silicon carbide power electronics. The company qualified high-voltage power units for U.S. military ground vehicle applications, moving them into production readiness. In addition, GE Aerospace successfully demonstrated its fourth-generation silicon carbide power MOSFET technology at its Research Center in Niskayuna, New York. The new devices are designed to improve switching speed, efficiency, and durability in high-power applications.
Wolfspeed continues to expand its position in the silicon carbide market through its high-volume 200 mm SiC manufacturing platform. The company recently introduced what it describes as the world’s first commercially available 10 kV silicon carbide MOSFET, a technology that received recognition as a PCIM Top Innovation. The device is intended to provide industrial, artificial intelligence, aerospace, and defense markets with a production-ready solution for high-voltage power conversion applications.
Through the collaboration, GE Aerospace and Wolfspeed aim to support the broader adoption of high-voltage silicon carbide technologies and advance next-generation power systems for critical industrial and defense infrastructure.
Original – Wolfspeed
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Semikron Danfoss and Mitsubishi Electric Corporation have jointly developed a new standard package for power modules featuring integrated 3-level circuit technology. The package has been designed to address the growing demand for high-efficiency power conversion solutions in industrial drive systems and renewable energy applications.
The new package combines key elements of Semikron Danfoss’ established SEMITRANS 20 platform and Mitsubishi Electric’s LV100-type package. By incorporating an optimized terminal layout specifically tailored for 3-level circuits while maintaining compatibility between both platforms, the new design aims to support inverter standardization and provide customers with greater flexibility in supply chain management.
Designed to support both IGBT and silicon carbide (SiC) technologies, the package is suitable for voltage classes up to 3.3 kV, enabling its use across a broad range of high-power applications.
The development comes as industries worldwide continue to pursue higher energy efficiency and carbon reduction targets. Increasing adoption of 3-level inverter topologies has been driven by their ability to improve energy efficiency while enabling more compact system designs. To support this trend, Semikron Danfoss and Mitsubishi Electric collaborated to create a package that integrates a complete 3-level T-type circuit within a single power module.
Based on the proven SEMITRANS 20 and LV100-type platforms, the new package offers a standardized main terminal pinout and aligned functional interfaces, allowing customers to standardize inverter architectures while benefiting from compatibility across suppliers.
The package has been engineered to accommodate both conventional IGBT devices and next-generation SiC semiconductors, providing a scalable platform capable of supporting current and future power conversion requirements.
A key feature of the design is the integration of the complete 3-level T-type circuit into a single module. This approach eliminates the need for more complex multi-module configurations, simplifying inverter design while contributing to improved system efficiency and reduced inverter size.
The terminal arrangement has also been optimized to reduce parasitic inductance within the module and simplify busbar design. In addition, the package incorporates three auxiliary control terminals that streamline gate drive circuit implementation and provide increased design flexibility for high-power 3-level inverter systems.
Moving forward, Semikron Danfoss plans to develop its own product portfolio based on the new standard package, supporting broader inverter standardization efforts and expanding sourcing options for customers in industrial and renewable energy markets.
Original – Semikron Danfoss
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onsemi has introduced the Elite Pairing Studio, an online design environment developed to simplify the process of pairing silicon carbide (SiC) MOSFETs and gate drivers for demanding power electronics applications, including AI data centers, electric vehicles, industrial systems, and electrification infrastructure.
The new cloud-based tool enables engineers to move beyond traditional component-level selection by quickly identifying recommended combinations of onsemi SiC MOSFETs and gate drivers based on specific application requirements. By providing visibility into device-level behavior and pairing trade-offs, the Elite Pairing Studio helps engineers make informed design decisions earlier in the development cycle while reducing the number of design iterations required before system validation.
Serving as the entry point to onsemi’s broader suite of design and simulation tools, the Elite Pairing Studio provides a seamless path from component selection to system-level evaluation of performance, efficiency, thermal behavior, and power losses.
As power electronics systems become increasingly complex, selecting the optimal combination of switching devices and gate drivers has become a critical design challenge. The pairing of these components directly influences system efficiency, switching losses, thermal performance, and reliability. Traditionally, engineers have relied on extensive datasheet comparisons, spreadsheet calculations, simulations, and empirical testing to evaluate suitable device combinations.
The Elite Pairing Studio streamlines this process by guiding engineers through a structured workflow that evaluates multiple gate driver options against a selected SiC MOSFET. The platform analyzes device combinations and recommends well-matched pairings tailored to the user’s requirements, enabling rapid comparison of alternatives and helping engineers refine power architectures earlier in the design process.
By reducing design complexity and minimizing manual evaluation efforts, the tool aims to lower development risk, shorten time-to-market, and improve confidence that final systems will perform as intended under real-world operating conditions.
The cloud-based environment provides users with a private and secure workspace through the onsemi website. Engineers can explore a wide range of gate driver and SiC MOSFET combinations using evaluation methods based on established industry equations and real-world performance calculations. The evaluation methodology is transparent and accessible, allowing users to inspect and understand the underlying analysis.
Through the Elite Pairing Studio, engineers can assess several key performance parameters for each device combination, including:
- Switching timings
- Gate voltage and current waveforms
- Voltage overshoot margins relative to device ratings
- Turn-on and turn-off switching energy losses
These insights allow engineers to evaluate the trade-offs associated with different pairings and gain an early understanding of factors that influence electromagnetic interference (EMI) performance, reliability margins, and overall switching behavior.
Results are presented through an interactive waveform viewer, enabling detailed examination of device performance before advancing designs into full system-level simulations. Additional onsemi technologies are expected to be incorporated into the Elite Pairing Studio in future releases.
The platform also enables engineers to carry pairing insights forward into subsequent design stages. Studio-generated PLECS system-level simulation models can be transferred directly into the onsemi Elite Power Simulator, where designers can further optimize efficiency, thermal performance, and power losses. This integrated workflow helps accelerate development while improving system-level performance for applications such as AI data centers, electric vehicles, industrial systems, and electrification infrastructure.
Original – onsemi
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Infineon Technologies AG and Siemens AG have entered into a partnership aimed at enhancing electrical protection and operational reliability in data centers, manufacturing facilities, and battery energy storage systems. As part of the collaboration, Infineon will supply silicon carbide (SiC) power modules for integration into Siemens’ SENTRON 3QD2 semiconductor circuit breakers.
The cooperation is designed to improve the efficiency, power density, and reliability of Siemens’ advanced protection solutions, addressing the growing demands of increasingly electrified and power-intensive environments.
According to Andreas Weisl, Executive Vice President and Chief Sales Officer of Industrial and Infrastructure at Infineon, the rapid expansion of AI data centers and the increasing electrification of industrial facilities are creating more complex electrical infrastructures. This complexity raises vulnerability to electrical faults and drives demand for more efficient, reliable, and sustainable power distribution systems. He noted that the combination of Infineon’s silicon carbide technology and Siemens’ expertise in power distribution is intended to support safe, fast, and dependable operation in power-critical environments.
Semiconductor circuit breakers, also referred to as solid-state circuit breakers, are designed to protect electrical systems against excessive current events such as short circuits and overloads. Unlike conventional electromechanical circuit breakers, which rely on mechanical components and typically operate on a millisecond timescale, Siemens’ SENTRON 3QD2 employs semiconductor devices and intelligent protection algorithms to interrupt current flow.
This approach enables interruption times in the microsecond range, making the system up to 1,000 times faster than traditional circuit breakers. Such performance is particularly important for direct current (DC) grids and applications where electrical interruptions can result in significant operational disruptions, including AI data centers and industrial manufacturing facilities. Faster fault isolation can help reduce the risk of downtime, data loss, and damage to critical equipment.
Markus Grabmeier, Chief Executive Officer of Electrical Products at Siemens Smart Infrastructure, stated that the company’s direct current portfolio is designed to improve energy efficiency while supporting the development of resilient and future-ready infrastructure. He noted that DC-based applications can reduce energy consumption and material usage, while battery integration can significantly lower peak power demand. According to Grabmeier, these capabilities contribute to industrial decarbonization efforts and support the development of technologies that provide practical value for customers and society.
The partnership addresses the increasing performance requirements of power-critical applications, where speed, precision, and reliability are essential. By integrating Infineon’s 1200 V CoolSiC™ MOSFET module in the 62 mm package into Siemens’ advanced protection systems, the companies aim to support the development of more resilient, efficient, and future-ready power infrastructure.
The collaboration is also intended to support the wider adoption of DC power distribution networks and highly electrified environments, helping industrial and infrastructure operators meet growing demands for performance, efficiency, and system reliability.
Original – Infineon Technologies
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Navitas Semiconductor has introduced its new UHV-TO-247-4-ISO package, designed to establish a new performance benchmark for high-voltage discrete power devices. The package is engineered for use with 1200 V to 3300 V GeneSiC™ silicon carbide (SiC) MOSFETs, combining module-level performance with the compact footprint of a discrete device.
Featuring more than 12 mm of pin-to-pin creepage distance and integrated isolation exceeding 6000 V, the UHV-TO-247-4-ISO package is designed to address the increasing demands of energy infrastructure, grid applications, and AI data center power systems. Compared with conventional non-isolated through-hole packages, the new design eliminates the need for external high-voltage isolation while improving thermal and electromagnetic interference (EMI) performance.
The addition expands Navitas’ packaging portfolio, which includes SiCPAK® power modules, QDPAK, TO-247-LP, and other advanced packaging solutions aimed at enabling more efficient, higher-density, and scalable power conversion systems.
A key feature of the package is its integrated high-voltage isolation capability. By incorporating an aluminum nitride (AlN) substrate, the package provides more than 6000 V of isolation, removing the need for external isolation materials and simplifying overall system design.
The package also incorporates a direct-cooled, reflow-compatible thermal management structure. Its isolated thermal pad can be mounted directly to liquid-cooled or air-cooled heat sinks without requiring external thermal interface materials (TIM). This design reduces thermal resistance between the junction and heat sink by up to 60%, enabling up to 150% greater power dissipation capability. The result is improved power density, enhanced reliability, simplified manufacturing, and lower overall system cost.
Navitas also highlights reduced coupling capacitance and lower radiated EMI as key advantages of the new package. The integrated isolation structure lowers die-to-heatsink stray capacitance compared with conventional ceramic-based isolation solutions, helping reduce common-mode noise and EMI emissions. This allows higher switching frequencies while improving system efficiency, power density, and reducing costs associated with EMI mitigation.
The package is built on a high-performance AlN substrate using active metal brazing (AMB) technology and a robust reflow-compatible heat sink interface. By eliminating external TIM and isolation layers from the thermal stack, the design enhances both power cycling capability and thermal cycling lifetime, supporting long-term operation in demanding applications.
In addition, the UHV-TO-247-4-ISO package maintains compatibility with the industry-standard TO-247-4 footprint and lead geometry, allowing designers to integrate the package into existing systems without requiring redesign while benefiting from improved performance, reliability, and lower total system costs.
Paul Wheeler, Vice President and General Manager of the SiC Business Unit at Navitas, stated that high-power system designers are often challenged by the need to balance thermal performance with robust high-voltage isolation. He noted that the new package addresses both requirements simultaneously, delivering power module-class performance in a discrete form factor and enabling designers to fully leverage GeneSiC TAP SiC MOSFET technology in applications such as immersion-cooled and liquid-cooled power electronics.
The UHV-TO-247-4-ISO package is available across a portfolio of 1200 V, 2300 V, and 3300 V SiC MOSFETs. The technology is intended to support high-voltage grid-connected power conversion systems, power conversion systems (PCS), solid-state transformers (SSTs), battery energy storage systems (BESS), and renewable energy applications.
The initial product lineup includes:
Part Number VDS RDS(on) G5R06MT12UIK 1200 V 6.5 mΩ G5R12MT12UIK 1200 V 12 mΩ G4H11MT23UIK 2300 V 11.5 mΩ G4H23MT23UIK 2300 V 23 mΩ G4H22MT33UIK 3300 V 22.5 mΩ G4H45MT33UIK 3300 V 45 mΩ With the introduction of the UHV-TO-247-4-ISO package, Navitas expands its portfolio of high-voltage SiC power solutions designed to address the growing performance, efficiency, and reliability requirements of next-generation power conversion systems.
Original – Navitas Semiconductor
