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Danfoss has acquired the remaining shares in Semikron Danfoss, increasing its ownership from 62% to 100% and turning the former joint venture into a fully owned subsidiary.
The move supports Danfoss’ electrification strategy under its LEAP 2030 plan, which prioritizes investment in high-value growth areas such as advanced power electronics and industrial-scale electrification technologies.
With full ownership, Danfoss gains greater strategic control over Semikron Danfoss and aims to accelerate investments in technology leadership, advanced power modules, and large-scale power electronics systems. The company expects the transition from a joint venture structure to full ownership to strengthen its ability to serve key markets including industrial drives, renewable energy systems, data centers, energy storage, off-highway equipment, construction machinery, and commercial vehicles.
Danfoss stated that the ownership change will not affect day-to-day operations. Semikron Danfoss will continue operating with the same teams and leadership structure while maintaining its focus on delivering power semiconductor modules and power electronics solutions to global customers.
Semikron and Danfoss originally merged their power module businesses in March 2022 to create Semikron Danfoss, combining expertise in power semiconductors and industrial power electronics. Since the merger, Danfoss has continued investing in the company’s technology and manufacturing capabilities.
As part of the strategic realignment, Danfoss also announced plans to divest the Semikron Danfoss business focused on power modules for electric passenger cars. The company considers this segment non-core and intends to concentrate on industrial electrification markets and broader energy transition applications.
Original – Danfoss
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Micro Commercial Components (MCC) has expanded its power semiconductor portfolio with the Gen5 silicon carbide Schottky diode series, a family of high-current 650 V SiC Schottky barrier diodes designed for low conduction losses, fast switching, and reliable operation under demanding electrical and thermal conditions.
Built on merged PiN Schottky (MPS) technology and packaged in the industry-standard D2-PAK format, the devices support compact high-power system designs while enabling efficient heat dissipation. The diodes are optimized for high-efficiency power conversion systems and combine a low forward voltage drop of approximately 1.3 V, near-zero reverse recovery behavior, and a maximum junction temperature of 175 °C.
These characteristics help reduce switching losses, increase power density, and simplify thermal management in applications such as power factor correction stages, industrial power supplies, renewable energy inverters, and high-current rectification circuits.
The series includes the SICB2065XG5M device and the automotive-qualified SICB2065XG5MQ variant, which complies with AEC-Q101 standards. With high current capability of up to 86 A, high-speed switching performance, and a positive temperature coefficient that helps prevent thermal runaway, the devices are designed to support efficient and stable operation even under high load and elevated temperature conditions.
According to MCC, the Gen5 SiC Schottky diode family enables designers to achieve higher efficiency and reliability targets while reducing electromagnetic interference and supporting compact system architectures in high-power applications.
Original – Micro Commercial Components
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Infineon Technologies AG announced that Chicony Power has selected its CoolGaN Transistors G5 to power multiple laptop adapters developed for a leading notebook manufacturer.
The design highlights how gallium nitride power semiconductors are enabling more compact and energy-efficient charging solutions. By using GaN technology, the new adapters can achieve smaller form factors while improving efficiency and sustainability for mainstream computing devices.
At the core of the adapter design are Infineon’s CoolGaN Transistors G5, optimized for fast switching and low conduction losses across a wide range of operating conditions. The devices are based on Infineon’s hybrid-drain gate injection transistor architecture, designed to deliver robust high-voltage gate operation, improved dynamic on-resistance performance, and higher saturation current to support reliable operation.
Compared with the previous generation, the G5 transistors deliver up to 30% improved performance in key figures of merit such as RDS(on) multiplied by gate charge. These improvements support higher efficiency and greater power density in compact adapter designs.
The adapter platform developed by Chicony Power incorporates high-frequency power architectures with optimized power factor correction and DC/DC conversion stages that leverage the fast switching capability of GaN devices. The design also includes EMI-optimized layouts and filtering to reduce electrical noise while maintaining strong compliance margins. Thermal optimization allows sustained power delivery in the 100 W to 300 W range while maintaining compact mechanical designs.
Infineon stated that it continues to expand its GaN portfolio, announcing more than 40 GaN products over the past year. The company is also progressing with scalable GaN manufacturing on 300-millimeter wafers, with initial samples already shipped to customers. According to Infineon, 300 mm GaN production will enable higher manufacturing capacity and faster delivery of GaN products as demand for high-efficiency power electronics grows.
Original – Infineon Technologies
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Wolfspeed announced the commercial availability of the industry’s first 10 kV silicon carbide power MOSFET, a development aimed at advancing high-voltage power conversion for grid infrastructure, industrial electrification, and AI data center applications.
The new device introduces silicon carbide capability at the 10 kV level, enabling new system architectures for high-voltage power electronics. According to the company, the technology supports improvements in system efficiency, reliability, and design flexibility for applications such as solid-state transformers, wind power systems, and medium-voltage uninterruptible power supplies.
The device also demonstrates high durability. Intrinsic time-dependent dielectric breakdown lifetime analysis indicates a projected operating lifetime of approximately 158,000 years at a continuous 20 V gate bias voltage. Wolfspeed stated that the technology also addresses bipolar degradation challenges that have historically affected 10 kV SiC MOSFETs, enabling reliable body diode operation required in many high-power systems.
The availability of 10 kV silicon carbide devices allows designers to simplify system architectures and reduce component counts. According to Wolfspeed, systems using the technology can reduce overall system cost by about 30% by enabling simpler inverter topologies and fewer power conversion stages. Power density improvements exceeding 300% are possible through higher switching frequencies, increasing from about 600 Hz to 10,000 Hz, which allows smaller magnetics and simplified gate drive and control circuits. The technology can also reduce system-level thermal requirements by up to 50% due to conversion efficiencies approaching 99%.
The fast switching capability of the device, with rise times below 10 nanoseconds, also enables solid-state switching solutions to replace conventional mechanical spark-gap switches in pulsed-power systems. These solid-state devices eliminate arcing, improve timing precision, and reduce maintenance requirements. Potential applications include geothermal power systems, semiconductor plasma etching, pulsed power for AI data centers, and sustainable fertilizer production.
The device, designated CPM3-10000-0300A, is currently available as a bare die for customer sampling and qualification. Wolfspeed stated that the commercialization of the 10 kV SiC MOSFET builds on nearly three decades of development in crystal growth, epitaxy, and high-voltage device manufacturing and enables customers to move prototype designs at this voltage level into production.
Original – Wolfspeed
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Magnachip Semiconductor Corporation reported financial results for the fourth quarter and full year 2025, highlighting continued progress in its strategic shift toward power semiconductors.
For the fourth quarter, consolidated revenue from continuing operations, which includes the Power Analog Solutions and Power IC businesses, reached $40.6 million, near the midpoint of the company’s guidance range of $38.5 million to $42.5 million. Consolidated gross profit margin from continuing operations was 9.3%, slightly above the midpoint of the projected 8.0% to 10.0% range.
Product revenue in the communications segment increased 24% sequentially and grew 68% compared with the same quarter a year earlier.
During the fourth quarter, Magnachip launched 24 new-generation products. Across the full year 2025, the company introduced 55 new-generation products, a significant increase compared with four launches in 2024.
The company also signed a strategic agreement with Hyundai Mobis to expand its industrial business through jointly developed IGBT technology.
Magnachip implemented several cost-reduction initiatives during the year, including operating expense optimization and a workforce reduction program. These measures are expected to generate more than $2 million in annualized savings starting in the fourth quarter of 2025.
In addition, the company invested $21.4 million in upgrading its Gumi fabrication facility during 2025, with $17.0 million of the investment financed through equipment loans.
According to CEO Camillo Martino, Magnachip has taken structural steps to simplify its business, reduce costs, and sharpen its focus on power semiconductor markets. The company aims to strengthen its competitiveness, improve margins over time, and position itself for a more consistent recovery despite challenging near-term market conditions.
Original – Magnachip Semiconductor
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Dynex Semiconductor will present new research from its R&D team at the International Conference on Integrated Power Electronics Systems (CIPS) 2026 in Dresden, Germany, highlighting advances in power module reliability, packaging technology, and predictive health monitoring for high-power electronic systems.
Two Dynex researchers will present technical papers addressing challenges that are increasingly important for next-generation applications in renewable energy, transportation, and industrial power systems.
Research presented by Dynex focuses on improving power module reliability through innovative interconnection technologies. The study investigates alternatives to conventional aluminium wire bond interconnections, which are widely used in power modules but can suffer from thermo-mechanical fatigue during repeated power cycling.
The work explores clip-based die-top interconnections made from copper and copper-molybdenum-copper materials with a low coefficient of thermal expansion. These materials help reduce thermal stress and improve current distribution across the semiconductor device.
Testing results showed significant improvements in reliability. The copper-molybdenum-copper clip approach achieved up to 10.9× longer power cycling lifetime compared with traditional wire bonding using SAC305 solder, and up to 15.4× improvement when combined with high-temperature lead-free die-attach solder.
Researchers also addressed a common challenge in power module packaging: improving die-top interconnection reliability can increase stress in the die-attach layer beneath the device. By combining the copper-molybdenum-copper clip interconnection with high-temperature lead-free solder for die attachment, the team was able to manage both reliability mechanisms effectively.
Detailed failure analysis using scanning acoustic microscopy, scanning electron microscopy, and optical microscopy confirmed stable electrical performance with minimal degradation of device characteristics during testing. The work represents more than four years of research and development and has resulted in a patent filing.
Dynex also presented developments in predictive health monitoring for power electronics. Using an online failure precursor data acquisition system, the proposed prognostic model can support predictive maintenance strategies, early failure warnings, remaining useful lifetime prediction, and monitoring of IGBT health degradation.
According to Dynex, these technologies represent an important step toward more resilient and reliable power electronic systems supporting renewable energy and other advanced electrification applications.
Original – Dynex Semiconductor
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Infineon Technologies AG and United Microelectronics Corporation have signed a memorandum of understanding to strengthen collaboration on reducing emissions across their supply chains and advancing sustainability practices within the semiconductor industry.
Both companies have established measurable emissions reduction targets that were validated by the Science Based Targets Initiative in 2025 and align with the goal of limiting global warming to 1.5°C above pre-industrial levels. Through the agreement, Infineon and UMC plan to encourage their suppliers to adopt carbon reduction targets consistent with the SBTi framework.
The partnership will involve active engagement with shared suppliers to help them develop and implement decarbonization strategies. Planned activities include workshops focused on knowledge sharing, tools for emissions measurement, and the development of best practices for sustainability.
Infineon has committed to reducing its absolute scope 1 and scope 2 greenhouse gas emissions by 72.5% by 2030 compared with a 2019 baseline. These scopes cover emissions generated directly by the company’s operations. In addition, Infineon has set a scope 3 target addressing emissions across its supply chain, aiming for 72.5% of its suppliers, measured by emissions from purchased goods and services, capital goods, and upstream transportation and distribution, to establish science-based targets by 2029.
UMC was the first semiconductor foundry to obtain SBTi validation in 2022 and strengthened its commitments in 2025 to align with the initiative’s most ambitious standards. The company aims to reduce scope 1 and scope 2 emissions by 42% and scope 3 emissions by 25 percent by 2030 compared with a 2020 baseline, with a long-term goal of achieving net-zero greenhouse gas emissions by 2050.
Both companies emphasized that collaboration is critical because scope 3 emissions typically represent the largest share of total emissions within the semiconductor industry’s complex multi-tier supply chain. UMC has already engaged more than 400 suppliers through its Supply Chain Greenhouse Gas Inventory Initiative since 2022, while Infineon has worked with more than 100 suppliers since 2023 through its supplier engagement program to support the adoption of science-based targets.
Through the new partnership, Infineon and UMC plan to combine their experience and industry influence to accelerate sustainable practices and emissions reductions among their shared suppliers.
Original – Infineon Technologies
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Micro Commercial Components (MCC) has introduced the SICWT40120G6M, a 1200 V silicon carbide Schottky diode designed to address switching losses, thermal stress, and reliability challenges in high-voltage, high-frequency power conversion systems.
Traditional rectifier solutions can increase power dissipation, require larger cooling solutions, and limit achievable power density, particularly in high-current and high-temperature environments. The new device is intended to improve efficiency and reliability in these demanding operating conditions.
The SICWT40120G6M is built on merged PiN Schottky (MPS) technology, enabling zero reverse recovery behavior along with low forward voltage and very low leakage current. These characteristics significantly reduce switching and conduction losses in high-frequency power conversion applications.
The diode supports high continuous and surge current capability and operates across a wide junction temperature range from −55°C to +175°C. A positive temperature coefficient helps maintain stable operation and reduces the risk of thermal runaway in high-power systems.
The device is packaged in a TO-247AD package designed for strong thermal performance, supporting efficient heat dissipation and enabling more compact and reliable system designs.
According to MCC, the new SiC diode targets applications including industrial power conversion, transportation systems, and EV charging infrastructure, where high efficiency, thermal robustness, and compact design are critical requirements.
Original – Micro Commercial Components
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Navitas Semiconductor and École Polytechnique Fédérale de Lausanne announced the exhibition of a 250 kW solid-state transformer (SST) solution at APEC 2026 in San Antonio, Texas.
The SST platform was developed by EPFL’s Power Electronics Laboratory and is designed to support the grid architecture required by next-generation data centers. The system replaces bulky low-frequency transformers while improving end-to-end efficiency. The design uses a single-stage, modularized bridge rectifier SST topology to convert 3.3 kV AC to 800 V DC at 250 kW power, enabling improved performance and modularity for modern data center infrastructure.
The demonstrator is built using Navitas GeneSiC ultra-high voltage 3300 V and high-voltage 1200 V silicon carbide trench-assisted planar MOSFETs and modules. The project is part of the Power Electronics Laboratory’s HeatingBits initiative, which aims to deploy and evaluate advanced power technologies inside EPFL’s operational data center.
According to Navitas, the collaboration demonstrates how medium-voltage power conversion can address the energy and thermal challenges associated with AI data centers. By combining high-voltage silicon carbide devices with a single-stage solid-state transformer architecture and advanced real-time control, the system enables scalable 800 V DC power distribution designed to improve efficiency from the grid to server racks while also supporting potential heat reuse.
EPFL researchers highlighted that the SST platform provides a galvanically isolated, scalable, and efficient interface between the medium-voltage AC grid and an 800 V DC data center architecture. The system also serves as a real-world experimental platform for advanced distributed control methods.
The Applied Power Electronics Conference (APEC) takes place from March 22 to 26 in San Antonio, Texas, where representatives from both Navitas and EPFL’s Power Electronics Laboratory will present the demonstrator at the Navitas booth.
Original – Navitas Semiconductor
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Renesas Electronics Corporation announced new leadership appointments aimed at accelerating growth in two key markets, India and China.
Effective March 1, 2026, Malini Narayanamoorthi assumed the role of Vice President and President of Renesas Electronics India. She previously served as India Country Manager and Vice President of MID Engineering within the Analog & Mixed Signal Product Group. Over the past several years, Narayanamoorthi has played a key role in expanding Renesas’ presence in India by strengthening customer relationships, advancing engineering programs, and improving collaboration across global teams. In her new position, she will focus on accelerating the company’s growth in India by leveraging the country’s rapidly growing technology ecosystem and strong engineering talent base.
Renesas also appointed Yvonne Liu as Vice President and President of Renesas Electronics China, also effective March 1, 2026. Liu brings 26 years of semiconductor industry experience across automotive, consumer, industrial, IoT, and cybersecurity markets. Prior to joining Renesas, she held senior leadership roles at NXP Semiconductors, most recently serving as Vice President and General Manager of Greater China Automotive. In her new role, Liu will oversee Renesas’ operations and strategic execution in China while strengthening engagement with customers and ecosystem partners.
Both executives will report directly to Hidetoshi Shibata, CEO of Renesas. The company said the appointments reinforce its commitment to strengthening operations and driving growth in two of Asia’s most important and rapidly expanding semiconductor markets.
Original – Renesas Electronics
