EPC Space has introduced three radiation-hardened eGaN power transistors targeting the growing power requirements of next-generation space computing platforms, including AI processors, GPUs and high-performance system-on-chip architectures.
The new EPC7050PCSH, EPC7066PCSH and EPC7065PCSH combine high current capability with very low on-resistance in compact plastic PQFN surface-mount packages featuring backside thermal pads. All three devices are rated for 101 A continuous current, while covering voltage classes of 15 V, 25 V and 40 V.
The 15 V EPC7050PCSH provides typical RDS(on) of 0.28 mΩ, while the 25 V EPC7066PCSH offers 0.37 mΩ. The 40 V EPC7065PCSH has typical RDS(on) of 0.5 mΩ. The devices also feature zero reverse-recovery charge, supporting lower switching losses and higher-frequency operation compared with conventional silicon power devices.
Radiation performance is a central feature of the new family. EPC Space specifies total ionizing dose immunity above 1 Mrad, single-event-effect tolerance to LET(Si) of 85 MeV·cm²/mg and neutron tolerance exceeding 4 × 10¹⁵ n/cm². This combination is intended to provide the radiation robustness required for demanding orbital computing and power-conversion systems.
The devices are optimized for synchronous rectification on the secondary side of intermediate bus converters producing 5 V to 12 V outputs. EPC Space highlights their low RDS(on) × QG figure of merit as an enabler for higher switching frequencies, increased conversion efficiency and greater power density.
The transistors also target voltage regulator modules, intermediate voltage regulators and point-of-load buck converters supplying processor core voltages around 0.8 V. EPC Space specifically identifies space computing platforms based on devices such as Versal SoCs and NVIDIA GPUs as potential applications.
Original – EPC Space