Navitas Semiconductor and Magnachip Semiconductor have announced a strategic partnership to accelerate the adoption of silicon carbide (SiC) technologies in high-voltage (HV) and ultra-high-voltage (UHV) power applications. Under the agreement, Magnachip will license Navitas’ GeneSiC™ Trench-Assisted Planar (TAP) technology to expand its power semiconductor portfolio into the SiC market.
The licensing agreement covers GeneSiC technologies with voltage ratings of 1200 V, 2300 V, 3300 V, and higher, enabling Magnachip to develop SiC devices for next-generation high-power conversion systems.
As part of the collaboration, Magnachip will also gain access to Navitas’ established SiC supply chain and materials ecosystem to support faster product development and market entry. The companies plan to transfer, qualify, and internalize the licensed technology at Magnachip’s manufacturing facility in South Korea while maintaining compatibility with Navitas’ existing technology platform.
The partnership targets a broad range of high-power applications, including:
- Energy transmission and grid infrastructure
- Battery energy storage systems (BESS)
- Industrial electrification
- Automotive power systems
- High-voltage power conversion
- Ultra-high-voltage power electronics
The companies stated that the agreement extends beyond the current SiC licensing arrangement, with additional areas of collaboration expected to be announced in the future.
For Navitas, the partnership expands the reach of its GeneSiC technology into the high-voltage power semiconductor market through licensing and technology collaboration. For Magnachip, the agreement provides a pathway into the rapidly growing SiC market, complementing its existing MOSFET and power semiconductor portfolio while enabling the development of higher-voltage, higher-efficiency power conversion solutions.
Original – Magnachip Semiconductor