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The District Court of Munich I (Landgericht München I) has issued another ruling in favor of Infineon Technologies in its ongoing patent litigation concerning gallium nitride (GaN) technology against Chinese semiconductor company Innoscience.
The court concluded that certain Innoscience GaN products infringe Infineon’s patented technologies and ordered the company to cease importing, selling, and marketing the infringing products in Germany. In addition to the injunction, the court awarded damages to Infineon.
The latest decision represents another milestone in Infineon’s broader intellectual property enforcement efforts surrounding its gallium nitride technology portfolio.
According to Infineon, the ruling follows several earlier legal decisions in Germany and the United States that have also found infringement of Infineon intellectual property by Innoscience products. These include previous judgments issued by German courts on August 1, 2025, and June 18, 2026.
In the United States, the Full Commission of the U.S. International Trade Commission (ITC) ruled on May 7 that Innoscience had infringed one of Infineon’s patents relating to gallium nitride technology. Additional patent infringement proceedings involving other Infineon patents remain ongoing in U.S. courts.
Gallium nitride has become a key enabling technology for modern power electronics due to its ability to deliver higher switching frequencies, lower switching losses, improved efficiency, and greater power density compared with conventional silicon-based devices.
These performance advantages have driven increasing adoption of GaN semiconductors across numerous applications, including:
- Renewable energy systems
- AI and cloud data center power supplies
- Industrial automation equipment
- Electric vehicles
- Telecommunications infrastructure
- High-efficiency power conversion systems
As the commercial importance of GaN continues to grow, protection of intellectual property has become an increasingly significant competitive factor within the semiconductor industry.
Infineon stated that it continues to strengthen its position as a leading integrated device manufacturer (IDM) in the gallium nitride market through sustained investment in research and development.
The company reports that its intellectual property portfolio now comprises approximately 450 GaN patent families, making it one of the industry’s largest collections of gallium nitride-related patents.
Infineon indicated that it remains committed to protecting its intellectual property rights while continuing to advance semiconductor technologies that support major global trends including decarbonization, digital transformation, renewable energy, artificial intelligence, and electrification.
Original – Infineon Technologies
