Toshiba Electronic Devices & Storage Corporation has introduced the TPM1R408RH, a new 80 V N-channel power MOSFET manufactured using its latest-generation U-MOS11-H process technology. The device is designed for switched-mode power supplies (SMPS) used in AI data centers, communications infrastructure, and other industrial power conversion applications where efficiency, power density, and electromagnetic interference (EMI) performance are increasingly critical.

The rapid expansion of artificial intelligence workloads is significantly increasing power consumption within data centers, while ongoing deployment of advanced communications infrastructure continues to drive demand for more efficient and compact power supplies.

Modern switched-mode power supplies must simultaneously minimize conduction losses, switching losses, thermal dissipation, and electromagnetic interference. Improvements in these areas not only increase energy efficiency but also reduce cooling requirements, simplify thermal management, and enable higher power density.

The TPM1R408RH has been developed specifically to address these evolving design requirements.

The new MOSFET incorporates an optimized device structure that achieves a maximum drain-source on-resistance (RDS(on)) of just 1.4 mΩ.

Compared with Toshiba’s previous-generation 80 V MOSFET, the TPM1R908QM manufactured using the earlier U-MOS X-H process, the new device delivers:

  • Approximately 26% lower on-resistance (RDS(on))
  • Approximately 45% improvement in the figure of merit (RDS(on) × Qg)

The significant reduction in the combined on-resistance and total gate charge (Qg) improves both conduction and switching performance, enabling lower overall power losses and higher conversion efficiency. According to Toshiba, these characteristics represent industry-leading performance levels for devices in this voltage class.

In addition to improving efficiency, the TPM1R408RH has been designed to suppress drain-source voltage spikes generated during switching events.

Reducing these switching transients helps lower electromagnetic interference (EMI), a major consideration in high-frequency switched-mode power supplies used in AI servers and communications equipment.

By minimizing device-generated voltage overshoot, the MOSFET can simplify system-level EMI mitigation, reducing the need for extensive redesign during later development stages and allowing simpler filter and snubber circuit implementations.

The new MOSFET is housed in Toshiba’s SOP Advance(E) package, which provides significant improvements in both electrical and thermal performance compared with the company’s previous SOP Advance(N) package.

The package delivers:

  • Approximately 65% lower package resistance
  • Approximately 15% lower thermal resistance

Lower package resistance reduces conduction losses, while improved thermal performance enhances heat dissipation and supports higher output power within compact power supply designs.

These improvements enable designers to increase power density while maintaining reliable thermal operation.

To assist power supply designers, Toshiba provides a comprehensive set of simulation tools for evaluating the new MOSFET.

Available resources include:

  • G0 SPICE models for rapid functional verification
  • High-accuracy G2 SPICE models capable of reproducing transient switching behavior
  • An online browser-based circuit simulator that enables engineers to evaluate circuit performance without installing software or downloading device models

These tools are intended to accelerate design cycles and simplify optimization of switched-mode power supply architectures.

The TPM1R408RH is intended for a wide range of high-efficiency power conversion applications, including:

  • AI data center power supplies
  • Communications base station power systems
  • Industrial switched-mode power supplies
  • High-density DC power conversion systems
  • Server power infrastructure
  • Telecom power equipment

The introduction of the TPM1R408RH reflects Toshiba’s continued investment in next-generation power MOSFET technologies aimed at improving efficiency, reducing power consumption, and enabling higher power density across industrial power electronics.

As AI infrastructure, telecommunications networks, and industrial automation systems continue to demand increasingly efficient power conversion, advanced MOSFET technologies such as the U-MOS11-H platform are expected to play an important role in supporting the next generation of high-performance switched-mode power supplies.

Original – Toshiba