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Toshiba Electronic Devices & Storage Corporation has introduced the TPM1R408RH, a new 80 V N-channel power MOSFET manufactured using its latest-generation U-MOS11-H process technology. The device is designed for switched-mode power supplies (SMPS) used in AI data centers, communications infrastructure, and other industrial power conversion applications where efficiency, power density, and electromagnetic interference (EMI) performance are increasingly critical.
The rapid expansion of artificial intelligence workloads is significantly increasing power consumption within data centers, while ongoing deployment of advanced communications infrastructure continues to drive demand for more efficient and compact power supplies.
Modern switched-mode power supplies must simultaneously minimize conduction losses, switching losses, thermal dissipation, and electromagnetic interference. Improvements in these areas not only increase energy efficiency but also reduce cooling requirements, simplify thermal management, and enable higher power density.
The TPM1R408RH has been developed specifically to address these evolving design requirements.
The new MOSFET incorporates an optimized device structure that achieves a maximum drain-source on-resistance (RDS(on)) of just 1.4 mΩ.
Compared with Toshiba’s previous-generation 80 V MOSFET, the TPM1R908QM manufactured using the earlier U-MOS X-H process, the new device delivers:
- Approximately 26% lower on-resistance (RDS(on))
- Approximately 45% improvement in the figure of merit (RDS(on) × Qg)
The significant reduction in the combined on-resistance and total gate charge (Qg) improves both conduction and switching performance, enabling lower overall power losses and higher conversion efficiency. According to Toshiba, these characteristics represent industry-leading performance levels for devices in this voltage class.
In addition to improving efficiency, the TPM1R408RH has been designed to suppress drain-source voltage spikes generated during switching events.
Reducing these switching transients helps lower electromagnetic interference (EMI), a major consideration in high-frequency switched-mode power supplies used in AI servers and communications equipment.
By minimizing device-generated voltage overshoot, the MOSFET can simplify system-level EMI mitigation, reducing the need for extensive redesign during later development stages and allowing simpler filter and snubber circuit implementations.
The new MOSFET is housed in Toshiba’s SOP Advance(E) package, which provides significant improvements in both electrical and thermal performance compared with the company’s previous SOP Advance(N) package.
The package delivers:
- Approximately 65% lower package resistance
- Approximately 15% lower thermal resistance
Lower package resistance reduces conduction losses, while improved thermal performance enhances heat dissipation and supports higher output power within compact power supply designs.
These improvements enable designers to increase power density while maintaining reliable thermal operation.
To assist power supply designers, Toshiba provides a comprehensive set of simulation tools for evaluating the new MOSFET.
Available resources include:
- G0 SPICE models for rapid functional verification
- High-accuracy G2 SPICE models capable of reproducing transient switching behavior
- An online browser-based circuit simulator that enables engineers to evaluate circuit performance without installing software or downloading device models
These tools are intended to accelerate design cycles and simplify optimization of switched-mode power supply architectures.
The TPM1R408RH is intended for a wide range of high-efficiency power conversion applications, including:
- AI data center power supplies
- Communications base station power systems
- Industrial switched-mode power supplies
- High-density DC power conversion systems
- Server power infrastructure
- Telecom power equipment
The introduction of the TPM1R408RH reflects Toshiba’s continued investment in next-generation power MOSFET technologies aimed at improving efficiency, reducing power consumption, and enabling higher power density across industrial power electronics.
As AI infrastructure, telecommunications networks, and industrial automation systems continue to demand increasingly efficient power conversion, advanced MOSFET technologies such as the U-MOS11-H platform are expected to play an important role in supporting the next generation of high-performance switched-mode power supplies.
Original – Toshiba
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Magnachip Semiconductor Corporation has appointed Chae Lee as Chief Executive Officer, effective July 1, 2026. Lee is also expected to join the company’s Board of Directors following the commencement of his appointment. He succeeds Camillo Martino, who has served as Interim Chief Executive Officer since August 2025 and will continue in his role as Chairman of the Board of Directors.
The appointment marks a new phase in Magnachip’s leadership as the company continues to expand its focus on power semiconductor technologies and pursue growth opportunities across high-value semiconductor markets.
Lee brings more than three decades of experience in the global semiconductor industry, with expertise spanning power semiconductors, power management integrated circuits (PMICs), sensors, audio amplifiers, and system-level semiconductor solutions. Throughout his career, he has held leadership positions across engineering, applications, sales, marketing, operations, and executive management.
Most recently, Lee served as Chief Executive Officer of Tagore Technology, where he led the company’s development of gallium nitride (GaN) semiconductor technologies for both radio frequency (RF) and power applications.
Prior to joining Tagore Technology, Lee held senior leadership roles at several major semiconductor companies, including Insyte Systems, NXP Semiconductors, and Maxim Integrated Products. During his tenure at Maxim, he played a key role in driving high-margin revenue growth through innovative product development within the company’s mobility business.
According to Chairman Camillo Martino, Lee’s combination of technical expertise, operational leadership, and commercial experience makes him well suited to lead Magnachip through its next stage of growth.
Martino noted that Lee’s background across power integrated circuits and system-level semiconductor solutions closely aligns with Magnachip’s strategy to strengthen its product portfolio, accelerate innovation, and expand its presence in attractive power semiconductor markets.
He also expressed appreciation to the company’s employees for their commitment during the past year and stated that he looks forward to working closely with Lee and the executive leadership team in his continued role as Chairman of the Board.
Commenting on his appointment, Lee described Magnachip as a company with a strong heritage in power semiconductors, experienced engineering talent, valuable manufacturing capabilities, and an expanding pipeline of next-generation products.
He indicated that Magnachip is well positioned to capitalize on long-term growth opportunities across several key markets, including:
- Artificial intelligence (AI)
- Data center infrastructure
- Industrial electronics
- Automotive systems
- Robotics
- Communications equipment
- Computing platforms
- Consumer electronics
Lee also emphasized his commitment to working closely with the Board of Directors and employees to build upon the company’s recent progress while creating long-term value for customers, employees, and shareholders.
Original – Magnachip Semiconductor
