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Dynex Semiconductor has announced the development of a new 450 A, 650 V gallium nitride (GaN) half-bridge power module designed to deliver ultra-fast switching performance, high efficiency, and advanced thermal management for next-generation power conversion systems.
As demand grows for higher energy efficiency, increased power density, and more compact power electronics, wide-bandgap semiconductor technologies are becoming increasingly important. While silicon carbide (SiC) devices have driven significant improvements in high-power conversion systems, gallium nitride (GaN) technology offers additional advantages in applications where switching speed and efficiency are critical performance drivers.
The new module is based on Gallium Nitride High Electron Mobility Transistors (HEMTs), which offer several key advantages over conventional silicon IGBTs and silicon carbide MOSFETs.
GaN devices support significantly faster switching speeds, enabling operation at higher frequencies while reducing switching losses. Unlike silicon and SiC devices, GaN HEMTs do not contain an intrinsic body diode, eliminating reverse recovery losses and improving efficiency during high-frequency operation.
Additional benefits include lower gate charge and output capacitance, which reduce gate-drive power requirements and improve overall system efficiency. These characteristics allow designers to shrink passive components such as inductors and capacitors, contributing to higher power density and more compact system architectures.
Dynex’s new power module combines GaN semiconductor technology with an advanced packaging approach designed to minimize electrical parasitics and maximize performance.
Key specifications include:
- 450 A continuous current capability
- 650 V blocking voltage
- Half-bridge inverter configuration
- Planar PCB embedding technology
- Double-sided cooling architecture
- Ultra-low commutation loop inductance below 1 nH
A key differentiator is the use of planar PCB embedding technology, which significantly reduces parasitic inductance within the power loop. Maintaining loop inductance below 1 nH enables exceptionally fast switching while minimizing voltage overshoot, ringing, and electromagnetic interference (EMI).
The embedding process also facilitates precise matching and balancing of parallel GaN devices, helping ensure uniform switching characteristics and improved module reliability under high-current operation.
To support high power density and continuous operation, the module incorporates a double-sided cooling architecture. By providing thermal paths on both sides of the semiconductor devices, the design minimizes junction-to-coolant thermal resistance and improves heat extraction efficiency.
This enhanced thermal management capability enables higher power throughput while maintaining safe operating temperatures, helping improve both system reliability and long-term performance.
The combination of ultra-low electrical parasitics and efficient thermal management allows the module to operate effectively in applications where both switching speed and power density are critical requirements.
The 450 A, 650 V GaN module is intended for a broad range of high-performance power conversion systems, including:
- Electric vehicle power electronics
- Renewable energy inverters
- Battery energy storage systems (BESS)
- AI and data center power supplies
- Fast charging infrastructure
- Industrial power conversion equipment
- High-frequency power electronics platforms
The development highlights the growing role of GaN technology in medium-voltage, high-current power conversion applications. While GaN has traditionally been associated with lower-power and high-frequency systems, advancements in packaging, thermal management, and device integration are enabling its expansion into increasingly demanding industrial and infrastructure applications.
By combining high current capability, low inductance packaging, and double-sided cooling, Dynex’s new 450 A, 650 V GaN module demonstrates how wide-bandgap technologies can support the industry’s push toward higher efficiency, greater power density, and more compact power conversion architectures.
As electrification, renewable energy deployment, AI infrastructure growth, and advanced industrial automation continue to accelerate, GaN-based power modules such as this are expected to play an increasingly important role in enabling the next generation of efficient power electronics systems.
Original – Dynex Semiconductor
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Infineon Technologies AG has announced that BRC Solar GmbH has selected its CoolGaN™ Transistor 100 V devices as the core switching technology for the company’s Power Optimizer platform.
The CoolGaN Transistor 100 V family combines high switching performance and power-handling capability in a compact 3 mm × 5 mm package, enabling panel-level maximum power point tracking (MPPT) with high efficiency and power density for solar energy applications. The design win highlights the increasing adoption of gallium nitride technology in renewable energy systems, where efficiency, compact size, and cost effectiveness are key design considerations.
According to Infineon, the CoolGaN Transistor 100 V family enables advanced panel-level MPPT functionality, helping solar systems maximize energy generation under varying operating conditions. The technology is designed to support high switching frequencies, low switching losses, and reduced electromagnetic interference compared with conventional silicon-based solutions.
Johannes Schoiswohl, Senior Vice President and General Manager of Infineon’s GaN Business Line, stated that the adoption of CoolGaN technology by BRC Solar demonstrates the practical benefits of gallium nitride devices in renewable energy applications. He noted that the technology enables higher efficiency, increased power density, and advanced monitoring capabilities while maintaining a compact system footprint.
In rooftop solar installations, partial shading of a single panel can significantly reduce the output of an entire string when maximum power point tracking is implemented only at the string level. Infineon noted that its CoolGaN technology supports cost-effective panel-level MPPT optimization, allowing individual panels to operate closer to their maximum performance and reducing the impact of shading on overall system output.
The company added that the combination of low switching losses, high-frequency operation, and compact package size makes CoolGaN particularly well suited for power optimizer applications, where efficiency, size constraints, and regulatory compliance requirements must be addressed simultaneously.
Pascal Ruisinger, Chief Financial Officer of BRC Solar GmbH, stated that the company has recognized the potential of gallium nitride technology since its founding and views it as an important enabler for high-performance solar power optimizers. He added that both companies share a common goal of utilizing advanced technologies to support the deployment of efficient and affordable renewable energy solutions.
Infineon highlighted that its CoolGaN portfolio includes both discrete and integrated solutions covering a broad range of voltage and power levels. This flexibility enables designers to optimize performance, efficiency, and cost across a wide variety of renewable energy applications.
The resulting Power Optimizer solutions are intended to provide improved energy yield and system performance for residential and commercial rooftop solar installations.
Additional information about Infineon’s CoolGaN portfolio is available through the company’s official channels, while BRC Solar will also showcase its Power Optimizer M600-E and M605-M solutions at The smarter E Europe 2026 exhibition.
Original – Infineon Technologies
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Renesas Electronics Corporation has announced the promotion of Gaurang Shah to Senior Vice President, effective July 1, 2026. Shah will continue in his current role as General Manager of Embedded Processing, where he leads one of the company’s core product organizations focused on microcontrollers, microprocessors, and embedded computing solutions.
Shah was appointed Vice President and General Manager of Embedded Processing on January 1, 2026, following organizational changes aimed at strengthening integration between Renesas’ embedded processing and connectivity businesses. The restructuring was designed to improve coordination across key technology platforms and support the company’s strategy of delivering more comprehensive, system-level semiconductor solutions.
In his current role, Shah is responsible for overseeing the Embedded Processing Product Group, a critical business unit within Renesas that serves automotive, industrial, infrastructure, consumer, and IoT markets. The organization plays a central role in the development of the company’s microcontroller (MCU), microprocessor (MPU), and embedded processing portfolios, which form the foundation of many of Renesas’ integrated hardware and software platforms.
Shah has also served as a member of Renesas’ Enterprise Leadership Team, contributing to the company’s broader strategic and operational direction.
According to Renesas, the promotion recognizes Shah’s leadership and contributions to advancing the company’s embedded processing business while strengthening its ability to deliver integrated semiconductor solutions to customers worldwide.
The appointment comes as Renesas continues to expand its focus on system-level solutions that combine embedded processing, connectivity, analog, power management, and software capabilities. Embedded processing remains a key growth area for the company, driven by increasing demand for intelligent edge computing, industrial automation, automotive electrification, software-defined systems, and connected devices.
By elevating Shah to Senior Vice President, Renesas reinforces the strategic importance of its embedded processing organization and its role in supporting the company’s long-term growth and technology roadmap.
Original – Renesas Electronics
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AlpSemi has successfully completed a €17 million funding round led by Yotta Capital, with participation from SE Ventures, Navitas Semiconductor, and Cycle Group. The financing will support the industrialization and commercial scale-up of AlpSemi’s next-generation semiconductor power switches designed for solid-state circuit breakers (SSCBs) targeting residential and commercial buildings as well as emerging 800 V DC AI data center power architectures.
The company is developing semiconductor technologies intended to enable a transition from traditional electromechanical protection systems toward fully solid-state, digitally controlled power distribution and protection networks. The funding is expected to accelerate both product commercialization and the expansion of AlpSemi’s semiconductor roadmap.
According to Chief Executive Officer Frédéric Dupont, the financing represents an important milestone in AlpSemi’s ambition to become a major industrial player in power electronics. The company’s strategy focuses on advancing semiconductor technologies required for the large-scale deployment of solid-state circuit breakers, which are expected to play an increasingly important role in future electrical infrastructure.
AlpSemi’s technology strategy spans semiconductor materials, device architectures, and system-level integration, creating a vertically integrated platform designed to address challenges associated with next-generation power protection and power conversion systems.
Chief Technology Officer Fabrice Letertre noted that the company’s approach extends beyond incremental device improvements by leveraging both wide-bandgap and ultra-wide-bandgap semiconductor technologies. These technologies are intended to provide a scalable foundation for future generations of solid-state circuit breaker products across multiple voltage classes and application areas.
SSCBs represent a significant evolution in electrical protection systems by replacing mechanical interruption mechanisms with semiconductor-based switching and digital control. Compared with conventional electromechanical breakers, SSCBs can provide:
- Real-time monitoring, control, and protection
- Faster fault response and system protection
- Improved energy efficiency
- Higher reliability in both AC and DC systems
- Enhanced scalability for modern electrified infrastructures
The technology is increasingly relevant as electricity demand grows due to artificial intelligence workloads, electrification, distributed energy resources, and the adoption of direct current (DC) power architectures.
Investors highlighted the growing demand for advanced power protection technologies driven by electrification, AI infrastructure expansion, and energy efficiency requirements.
Yotta Capital emphasized that AlpSemi’s technology platform addresses critical challenges associated with next-generation electrical infrastructure and aligns with broader investment themes focused on low-carbon industrial technologies.
SE Ventures noted that widespread adoption of SSCBs will be a key enabler of the digitalization of electrical distribution networks and viewed AlpSemi as representative of a new generation of industrial technology companies combining semiconductor innovation with strong market demand.
AlpSemi has already launched its first commercial product, the AS800 semiconductor power switch, designed for solid-state miniature circuit breakers operating in 110 V and 230 V electrical systems.
Key attributes of the AS800 include:
- High power density
- Compact system integration
- Support for distributed energy resources
- Enhanced flexibility for modern electrical networks
The product has been developed through a global supply chain involving multiple international partners and is positioned for large-scale industrial deployment. The newly raised capital will support expanded commercialization activities.
While the AS800 serves residential and commercial applications, AlpSemi’s longer-term roadmap extends into higher-voltage power protection systems, including 800 V DC architectures being developed for next-generation AI data centers.
As AI infrastructure scales, data center operators are increasingly exploring high-voltage DC distribution to improve power conversion efficiency and reduce energy losses. These architectures require advanced protection technologies capable of handling higher voltages, faster fault isolation, and increased power density.
Navitas Semiconductor CEO Chris Allexandre noted that the transition toward 800 V DC power systems will require new approaches to power distribution and protection. He highlighted AlpSemi’s technology platform as being specifically designed to address these emerging requirements, supporting intelligent power distribution systems for energy-intensive AI computing environments. Navitas will support AlpSemi both as an investor and strategic partner.
The funding positions AlpSemi at the intersection of several major industry trends:
- Electrification of buildings and industry
- Digitalization of electrical distribution systems
- AI-driven growth in data center power demand
- Adoption of 800 V DC architectures
- Expansion of distributed energy resources
- Increased focus on energy efficiency and grid modernization
By focusing on semiconductor-enabled solid-state protection technologies, AlpSemi aims to become a key enabler of next-generation electrical infrastructure spanning residential, commercial, industrial, and AI data center markets.
Original – AlpSemi
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Magnachip Semiconductor Corporation has introduced two new 6th-generation 600 V Super Junction (SJ) MOSFETs designed to address the increasing efficiency, power density, and reliability requirements of AI server power supplies and other high-performance power conversion applications.
The new devices feature low on-resistance values of 36 mΩ and 37 mΩ, helping reduce conduction losses and improve overall power conversion efficiency. Both products also integrate a Zener diode between the gate and source terminals, providing enhanced protection against electrostatic discharge (ESD) events and improving long-term device reliability in demanding operating environments.
In addition to improved electrical performance, the new generation incorporates a significantly smaller die size compared with previous Magnachip SJ MOSFET generations, enabling higher integration density and greater design flexibility for power system developers.
One of the newly released devices, the MMTB60R037G6FZVRH, incorporates a Fast Recovery Body Diode (FRD) structure that reduces reverse recovery losses and enhances switching performance during high-frequency operation.
These characteristics are particularly important for AI server power supplies, where maximizing efficiency, reducing thermal dissipation, and increasing power density have become critical design priorities as server rack power levels continue to rise.
Both devices are housed in a TOLL (TO-Leadless) package and are targeted at high-current, high-power applications. The package incorporates a Kelvin Source connection, which minimizes parasitic inductance, improves switching behavior, and enables more stable operation under fast switching conditions.
The launch comes as demand accelerates for more efficient power semiconductors across AI infrastructure, electric vehicle charging systems, telecommunications equipment, and industrial power supplies.
Modern power architectures increasingly require:
- Higher conversion efficiency
- Improved thermal performance
- Greater power density
- Enhanced reliability
- Reduced system footprint
Super Junction MOSFET technology continues to play a critical role in achieving these objectives, particularly in AC-DC front-end stages, power factor correction (PFC) circuits, and high-voltage switching applications.
According to market research firm Omdia, the discrete semiconductor market serving computing and data storage applications is projected to grow from approximately $3.7 billion in 2025 to approximately $5.9 billion by 2030, representing a compound annual growth rate (CAGR) of roughly 9%.
The expansion of AI infrastructure, cloud computing, and high-density server architectures is expected to be a major driver of this growth, increasing demand for advanced power semiconductor solutions capable of delivering higher efficiency and greater power density.
Hyuk Woo, Chief Technology Officer of Magnachip, highlighted the importance of power semiconductor performance in next-generation systems, noting that growing demand across AI infrastructure, EV charging networks, and industrial power applications is creating increasing requirements for efficiency and reliability.
According to the company, the new 6th-generation SJ MOSFET platform combines low on-resistance, enhanced switching performance, and improved robustness to help customers optimize power conversion efficiency while reducing system size and thermal management requirements.
While developed with AI server power systems in mind, the new MOSFETs are also suitable for a broad range of high-efficiency power conversion applications, including:
- AI and cloud server power supplies
- Telecom infrastructure power systems
- Industrial power supplies
- EV charging equipment
- Data center power distribution
- High-power AC-DC converters
- Renewable energy power conversion systems
With the introduction of these devices, Magnachip continues to expand its power semiconductor portfolio to address the growing demand for efficient, reliable, and high-density power solutions across data center, industrial, and electrification markets.
Original – Magnachip Semiconductor
