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Toshiba Electronic Devices & Storage Corporation has developed a 6500 V-rated trench-type second-generation Injection Enhanced Gate Transistor (IEGT) chip featuring enhanced turn-off capability and short-circuit robustness. The company has also commercialized a new 6500 V press-pack IEGT (PPI) incorporating the technology for use in high-voltage applications, including HVDC transmission systems, STATCOM installations, and industrial motor drives.
The new device increases the voltage rating from the conventional 4500 V class to 6500 V, enabling a reduction in the number of power semiconductor devices connected in series for a given output voltage. According to Toshiba, this contributes to simpler system architectures and more compact power conversion equipment.
The development comes as the deployment of renewable energy continues to expand worldwide, increasing the need for efficient long-distance power transmission and advanced grid stabilization technologies. Since power generation sites and energy consumption centers are often geographically separated, high-voltage direct current (HVDC) transmission systems are becoming increasingly important. At the same time, the adoption of static synchronous compensators (STATCOMs) is growing to support grid stability.
In these high-voltage power conversion systems, multiple semiconductor devices are typically connected in series. Increasing the voltage rating of individual devices reduces the number of required components, helping lower system complexity and equipment size.
Toshiba has previously mass-produced 4500 V-class press-pack IEGTs. However, achieving reliable operation at 6500 V requires maintaining sufficient turn-off capability and short-circuit performance under significantly higher voltage conditions. This challenge is closely linked to the precise control of carrier transport within the semiconductor structure. In addition, variations in breakdown voltage observed during bias testing represented another technical hurdle.
To address these challenges, Toshiba developed a new 6500 V IEGT chip featuring a shorted dummy cell structure in the cell region, eliminating floating regions that can cause unstable potential distribution. The company also optimized the mesa width within the current conduction region and introduced an N-barrier layer beneath the P-base layer responsible for carrier transport control.
These structural enhancements improve carrier distribution and current flow throughout the device, resulting in more uniform current distribution during turn-off operation. Toshiba stated that this enables stable operation with sufficient turn-off capability and short-circuit performance under high-voltage conditions. The company also confirmed an improved trade-off between conduction losses and switching losses.
In the termination region, Toshiba adopted a structure incorporating guard rings and a semi-insulating layer to distribute the electric field more effectively. This design enables breakdown voltages exceeding 6500 V. Additionally, optimization of the interface process between the semi-insulating layer and silicon suppresses breakdown voltage variations observed under bias stress conditions, contributing to more stable device characteristics.
The newly developed chip has undergone turn-off and short-circuit testing at a voltage of 4500 V, confirming its suitability for high-voltage power applications.
Based on this technology, Toshiba has commercialized the ST2000JXH35A, a 6500 V / 2000 A press-pack IEGT. In HVDC transmission systems, the use of 6500 V devices can reduce the number of series-connected semiconductor devices by approximately 33% compared with 4500 V solutions, contributing to lower system size and weight.
Toshiba stated that it will continue developing press-pack IEGT technologies for high-voltage power conversion applications while expanding its product portfolio to support the advancement of power transmission and energy infrastructure systems.
The technology was presented at PCIM Europe 2026, held in Nuremberg, Germany, from June 9 to 11, 2026.
Original – Toshiba
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Wolfspeed, Inc. has announced the appointment of Daniel (Dan) Whalen as Vice President of Investor Relations, effective June 15, 2026.
In his new role, Whalen will lead Wolfspeed’s investor relations strategy and oversee engagement with the investment community as the company continues to execute its long-term strategic and operational objectives.
According to Wolfspeed, Whalen brings extensive experience in investor relations, the semiconductor industry, and capital markets, including both buy-side and sell-side equity research. He will be responsible for strengthening the company’s relationships with investors and analysts, enhancing financial communications, and supporting the communication of Wolfspeed’s long-term value creation strategy.
Commenting on the appointment, Gregor van Issum, Chief Financial Officer of Wolfspeed, said that Whalen’s combination of investor relations leadership, semiconductor industry knowledge, and capital markets expertise makes him well positioned to support the company’s engagement with the financial community. He added that Whalen’s understanding of how investors evaluate performance, strategy, and long-term value creation will help strengthen Wolfspeed’s dialogue with shareholders and analysts.
Whalen joins Wolfspeed from Qorvo, Inc., where he most recently served as Director of Investor Relations. Prior to that, he led investor relations activities at BrightView Holdings, where he was responsible for earnings communications and engagement with institutional investors and the analyst community.
Earlier in his career, Whalen spent more than 25 years in equity research across both buy-side and sell-side organizations. During that time, he covered a wide range of industries, including specialty materials, metals, and related sectors, providing him with extensive experience in evaluating companies operating in technology and industrial markets.
He holds a Bachelor of Arts degree in Economics from Bucknell University.
Wolfspeed stated that the appointment reflects its continued commitment to disciplined execution, transparent communication with investors, and the creation of long-term shareholder value.
Original – Wolfspeed
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Siltronic AG has successfully completed a capital increase through an accelerated bookbuilding process with the exclusion of subscription rights. The transaction was carried out as an international private placement targeting institutional investors and was significantly oversubscribed.
The company announced that anchor shareholder HAL Trust participated in the offering with a substantial order. The newly issued shares were placed at a price of €91 per share, generating gross proceeds of approximately €273 million.
According to Siltronic, the proceeds from the capital increase will support the company’s long-term growth strategy, strengthen its balance sheet, and provide additional flexibility for general corporate purposes.
The company operates in semiconductor markets that continue to benefit from long-term growth drivers, including artificial intelligence, digitalization, and electromobility. These trends are expected to support ongoing demand for silicon wafers, particularly in the 300 mm segment.
Siltronic stated that its strategic focus remains centered on Leading Edge and Power wafer technologies, positioning the company to address growth opportunities across a broad range of semiconductor applications and end markets. The company also highlighted its technology leadership, research and development capabilities, and long-standing customer relationships as key strengths supporting future growth.
As part of its expansion strategy, Siltronic continues to advance its 300 mm product portfolio while maintaining its position in advanced 300 mm wafer technologies. The ongoing ramp-up of the company’s new 300 mm manufacturing facility in Singapore is expected to further enhance its competitive position and support profitable growth over the medium term.
The capital increase is also intended to strengthen the company’s financial profile and increase strategic flexibility. Siltronic stated that the additional capital will enhance its ability to pursue market opportunities, including those arising from the growing adoption of artificial intelligence technologies, while supporting future profitable expansion.
Commenting on the transaction, Dr. Michael Heckmeier, Chief Executive Officer of Siltronic AG, said the strong participation from both existing and new institutional investors reflects confidence in the company’s strategic direction and long-term growth prospects. He added that the successful capital raise strengthens Siltronic’s financial foundation and supports the execution of its strategic priorities while maintaining resilience through market cycles.
Deutsche Bank, UBS, and J.P. Morgan acted as Joint Global Coordinators and Joint Bookrunners for the transaction.
Original – Siltronic
