SemiQ Inc. has expanded its QSiC™ Dual3 family of silicon carbide (SiC) half-bridge MOSFET modules with the introduction of high-thermal-performance variants featuring aluminum nitride (AlN) substrates and pre-applied thermal interface material (TIM), alongside new 1700 V products. The expanded portfolio is designed to address the increasing power and thermal requirements of applications including AI data center power systems, energy storage infrastructure, solid-state transformers (SSTs), AC-DC converters, and industrial motor drives used in cooling and chiller systems.
The QSiC Dual3 family is designed to support the development of power converters with high conversion efficiency and power density. To further enhance performance, selected modules are available with an optional parallel Schottky barrier diode (SBD), which helps reduce switching losses and improve efficiency, particularly in high-temperature operating environments.
Several devices within the family offer RDS(on) values as low as 1 mΩ while supporting power levels up to 1150 A at 1200 V in a 62 mm × 152 mm package. The portfolio is intended to provide designers with a scalable platform for high-power applications requiring both efficiency and compact system design.
SemiQ developed the QSiC Dual3 series as a replacement option for conventional IGBT modules, enabling system upgrades with minimal redesign. To support reliability requirements, all MOSFET die used in the modules undergo wafer-level gate oxide burn-in testing at voltages exceeding 1450 V. The modules also feature low junction-to-case thermal resistance, enabling simplified thermal management and the use of smaller, lighter heatsinks at the system level.
According to SemiQ, the growing demand for continuous operation in data centers is increasing the importance of efficient power conversion. The company noted that the QSiC Dual3 platform is being deployed in both active front-end power systems and liquid chiller compressor drives, offering reductions in system size and weight compared with traditional silicon IGBT-based solutions while leveraging the efficiency benefits of SiC technology.
The newly introduced high-thermal-performance variants are also being designed into main AC-DC power converters and solid-state transformer architectures. These systems are intended to support direct conversion from medium-voltage AC distribution levels, including 13.8 kV and 35 kV, to high-voltage 800 V DC systems used in modern data center power architectures.
The latest additions to the portfolio are identified by the “-NT” suffix and incorporate AlN substrates together with pre-applied TIM. SemiQ has also expanded the family with new 1700 V devices, including the GCMX1P7C170S4B1(-NT) and GCMS1P7C170S4B1(-NT), which are expected to become available in the coming months.
The expanded lineup includes both standard and Schottky barrier diode-equipped configurations across multiple resistance ratings. New 1200 V modules are available with RDS(on) values of 1 mΩ, 1.4 mΩ, and 2 mΩ, while the new 1700 V variants feature an RDS(on) of 1.7 mΩ. All devices are offered in the S4B1 half-bridge package with AlN substrate and thermal interface material options.
Original – SemiQ