onsemi has introduced GaNEXUS™, a new gallium nitride (GaN) power portfolio designed to deliver higher efficiency, increased power density, and improved thermal performance across a broad range of applications, including AI data centers, industrial automation, robotics, and energy infrastructure.

The initial GaNEXUS portfolio includes GaN FETs spanning voltage ranges from 40 V to 650 V, as well as 650 V GaNEXUS Smart devices that integrate protection features to simplify system design and improve reliability. These products are currently available for sampling.

The launch expands onsemi’s intelligent power portfolio and complements the company’s existing silicon and EliteSiC technologies. By offering multiple semiconductor technologies within a unified portfolio, onsemi aims to provide customers with greater flexibility in optimizing efficiency, thermal performance, system size, and total cost across a wide range of power conversion architectures.

The new portfolio targets applications with growing power requirements, including AI data center power delivery, 48 V power systems, robotics, industrial automation equipment, and energy infrastructure. As AI infrastructure, electrification, and industrial automation continue to accelerate, designers face increasing challenges related to energy consumption, cooling requirements, and system footprint. According to onsemi, AI data centers alone are expected to account for up to 9% of U.S. electricity generation by 2030, while power and cooling can represent up to 40% of total data center operating expenses.

GaNEXUS technology addresses these challenges through faster switching speeds, lower switching losses, higher power density, and improved thermal performance compared with conventional silicon-based solutions. These characteristics enable reductions in the size of magnetic components and cooling systems while improving overall efficiency and responsiveness and lowering system costs in applications ranging from AI data center power delivery and electric vehicle charging to robotics and industrial power systems.

Antoine Jalabert, Vice President of the GaN Division at onsemi, stated that the GaNEXUS portfolio is enabling new approaches to power system design by providing engineers with greater flexibility to address constraints that have traditionally limited conventional power architectures.

When combined with onsemi’s Treo platform for integrated sensing, control, protection, and power management, GaNEXUS devices can be deployed as part of complete system-level power solutions. This approach is intended to simplify design complexity, accelerate development and qualification cycles, reduce thermal and cooling requirements, and optimize performance throughout the power delivery chain.

In low- and medium-voltage applications, including AI server 48 V intermediate bus converters (IBCs), battery backup units (BBUs), and motor drives, GaNEXUS technology enables approximately 30% to 60% smaller magnetic components, 1.5x to 2x higher power density, and efficiency improvements ranging from 0.5% to 2%, depending on system topology. Additional benefits include reduced switching losses, enhanced thermal performance, and improved control stability.

For higher-voltage applications such as AI power shelves, high-voltage DC-DC conversion, power factor correction (PFC), and LLC power stages, GaNEXUS enables up to 60% reductions in magnetic component size in high-frequency AC-DC and resonant converter stages. The technology can also provide 1.5x to 2x higher power density and efficiency gains of approximately 0.5% to 1%, contributing to lower thermal stress and reduced operating costs in high-power systems. The integrated protection capabilities of GaNEXUS Smart devices further simplify power stage design and support faster qualification processes.

The GaNEXUS portfolio is offered in thermally enhanced package options with industry-standard footprints to support design flexibility and dual sourcing strategies. Available package formats include TOLL Bottom Cooling, TOLT Top Cooling, and dual-cooled 3.3 mm × 3.3 mm and 5 mm × 6 mm packages.

Original – onsemi