SemiQ Inc. will present its latest silicon carbide (SiC) power module developments at PCIM Europe 2026, including an expanded QSiC™ Dual3 MOSFET module family featuring new high-thermal-performance configurations with aluminum nitride (AlN) substrates and pre-applied thermal interface material (TIM).
The company will showcase its latest technologies at Alfatec’s booth (Hall 4A, Booth 110) during the exhibition, which takes place from June 9 to 11, 2026, at Messe Nürnberg in Nuremberg, Germany.
Designed to address the increasing power density and thermal management requirements of AI data centers, high-power industrial systems, solar photovoltaic installations, and electric vehicle applications, the expanded portfolio combines flexible module designs with high-efficiency silicon carbide technology.
Among the featured products will be SemiQ’s latest QSiC™ Gen3 SiC modules, which deliver a 30% reduction in both specific on-resistance (RONsp) and turn-off energy losses (EOFF) compared with previous generations. According to the company, these improvements help reduce cooling requirements and switching losses in applications such as EV charging infrastructure, energy storage systems, and industrial motor drives.
A key highlight of the exhibit will be the expanded QSiC Dual3 module family. These 1200 V half-bridge MOSFET modules are designed to support the development of high-efficiency, high-power-density power converters. The latest additions to the family incorporate aluminum nitride substrates and pre-applied thermal interface material to enhance thermal performance.
SemiQ will also display its S3 module family, which includes a 608 A half-bridge module featuring an ultra-low RDS(on) of 2.4 mΩ and a junction-to-case thermal resistance (RθJC) of only 0.07°C/W.
The company’s SOT-227 module lineup will also be featured, offering five module options with RDS(on) values of 7.4 mΩ, 14.5 mΩ, and 34 mΩ. These modules are targeted at applications including server power supplies, battery charging systems, and photovoltaic inverters.
In addition, visitors will be able to explore SemiQ’s B2T1 six-pack module family, which offers RDS(on) values ranging from 19.5 mΩ to 82 mΩ. These modules are designed to minimize parasitic effects in motor drive systems and advanced AC-DC converter applications.
The company will also present its B3 full-bridge modules, which provide current ratings of up to 120 A and RDS(on) values as low as 8.6 mΩ. These products are intended to maximize power density in high-voltage DC-DC conversion systems.
“These SiC technologies directly address the challenges faced by those implementing AI infrastructure,” said Dr. Timothy Han, President of SemiQ. “By improving efficiency and addressing the escalating power demands of datacenters across key application areas, we are expanding the potential for AI to scale sustainably.”
SemiQ’s PCIM 2026 exhibit will focus on demonstrating how its latest silicon carbide module technologies support higher efficiency, improved thermal management, and increased power density across a range of demanding applications, including AI infrastructure, renewable energy systems, industrial automation, and electric mobility.
Visitors can view the company’s latest products and speak with technical representatives at Booth 110 in Hall 4A throughout the exhibition.
Original – SemiQ