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Analog Devices, Inc. has agreed to acquire Empower Semiconductor in an all-cash transaction valued at $1.5 billion, expanding ADI’s capabilities in AI-focused power delivery technologies including integrated voltage regulators (IVRs) and silicon capacitors.
The acquisition directly targets one of the most critical bottlenecks in AI infrastructure: delivering high-density, energy-efficient power to increasingly power-hungry AI processors. As hyperscale AI systems scale toward higher compute densities, power delivery efficiency and thermal constraints are becoming major system-level limitations.
Empower’s technology portfolio focuses on ultra-compact, high-speed integrated voltage regulation and silicon capacitor solutions that enable power conversion closer to AI processors. This shortens the power delivery path, reduces losses, improves transient response, and increases overall compute density — key priorities for next-generation AI servers and accelerators.
Strategically, the deal strengthens ADI’s position as a “grid-to-core” power partner for hyperscalers and AI silicon developers. The company is moving beyond discrete power management ICs toward broader system-level power architectures that span from high-voltage infrastructure down to processor-level voltage regulation.
Empower’s FinFast™ technology is already deployed in production silicon capacitor solutions, while its IVR programs are being developed alongside major hyperscalers and AI chip providers. ADI plans to accelerate commercialization using its manufacturing scale, customer relationships, and power management portfolio.
Beyond AI data centers, the combined technology portfolio could also support high-performance computing, networking, telecommunications, aerospace, and other compute-intensive applications where power density and thermal efficiency are becoming limiting factors.
The acquisition is expected to close in the second half of 2026, subject to regulatory approvals and customary closing conditions.
Original – Analog Devices
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Infineon Technologies AG has expanded its CoolGaN™ BDS 40 V G3 family with two new bidirectional switch devices, the IGK048B041S and IGK120B041S, targeting compact consumer electronics such as smartphones, notebooks, and wearables.
The new GaN-based devices integrate the functionality of two back-to-back silicon MOSFETs into a single component, enabling up to 82% PCB footprint reduction while cutting component count in half. This directly addresses increasing pressure on designers to maximize power efficiency within highly space-constrained mobile devices.
Available in ultra-compact wafer-level chip-scale packages, the devices deliver low on-resistance values of 4.2 mΩ and 9 mΩ while maintaining compatibility with standard 5 V gate drivers. Infineon emphasized that the architecture enables designers to reuse existing driver layouts, simplifying adoption and accelerating product development.
From a performance standpoint, the CoolGaN bidirectional switches offer significantly lower gate charge and substantially reduced leakage current compared to competing solutions. Lower gate charge improves switching speed and reduces switching losses, supporting more efficient fast-charging systems and better thermal management.
Unlike traditional silicon MOSFETs that rely on body diodes, the new devices provide true bidirectional voltage and current blocking. This capability is particularly important in USB overvoltage protection, load switching, and power multiplexing applications where reverse current prevention is critical for protecting sensitive electronics.
Original – Infineon Technologies
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Infineon Technologies AG has officially launched Moore4Power (“More than Moore for Disruptive Innovations in Power Electronics”), a major European semiconductor R&D initiative focused on developing next-generation smart, efficient, and sustainable power electronics systems.
The three-year project, funded through the European Chips Joint Undertaking and Horizon Europe programs, brings together 62 partners across 15 countries with a total project budget of €91 million. Participants include semiconductor manufacturers, universities, research institutes, and industrial companies spanning sectors such as automotive, rail, renewable energy, aerospace, and industrial automation.
Rather than relying solely on traditional transistor scaling under Moore’s Law, Moore4Power focuses on “More than Moore” system-level innovation. The initiative centers on heterogeneous integration, combining silicon (Si), silicon carbide (SiC), and gallium nitride (GaN) technologies with sensing, communication, and control functions into highly integrated power systems optimized for efficiency, reliability, and power density.
A key technical focus is modular power chiplet architectures, enabling scalable and cost-effective designs for future high-performance power conversion platforms. The project builds on prior achievements from the PowerizeD initiative completed in 2025, which advanced efficiency and reliability in integrated power systems.
Moore4Power targets several strategic application areas:
- Renewable energy: improving wind turbine power conversion efficiency and harvested energy output.
- E-mobility: enabling near-lossless bidirectional charging with system efficiencies approaching 99%.
- Rail systems: reducing propulsion losses by at least 30%.
- AI and industrial electrification: supporting next-generation high-density power conversion infrastructure.
The project also emphasizes accelerated development methodologies using AI-assisted modeling, digital twins, and automated workflows. According to the consortium, these approaches could reduce the time between first silicon samples and validated datasheet release from several weeks to approximately one week.
Another major innovation is the integration of Digital Product Passports (DPPs) directly into power modules. These wireless-access lifecycle records will track operating conditions, health status, and remaining lifetime, supporting predictive maintenance, longer product lifecycles, and circular economy goals.
Strategically, Moore4Power reflects Europe’s broader push to strengthen semiconductor sovereignty and competitiveness in advanced power electronics. By combining wide-bandgap technologies with advanced packaging and system integration, the initiative aims to position Europe more strongly in critical future markets including electrification, renewable energy, AI infrastructure, and industrial automation.
The project consortium includes major industry participants such as ABB, Airbus, Alstom, IMEC, and multiple Infineon regional entities, alongside universities and research centers across Europe.
Original – Infineon Technologies
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Nexperia has issued a public statement responding to concerns following recent financial disclosures by Wingtech Technology and inquiries from Wingtech shareholders.
Nexperia emphasized that its legal actions initiated in the Netherlands in October 2025 were intended to address what it described as severe governance and management issues under former CEO Zhang Xuezheng, rather than to harm shareholder interests. The company stated that the Dutch Enterprise Chamber intervened by suspending the former CEO, appointing interim leadership, and placing shareholder voting rights under independent administration to stabilize operations and restore governance oversight.
The company also noted that it has continued cooperating with Wingtech’s auditors to support disclosure requirements and has repeatedly sought constructive dialogue with Wingtech leadership regarding operational and governance alignment.
Operationally, Nexperia acknowledged ongoing challenges related to management control over its China-based entities, stating that some operations remain outside the company’s governance and compliance structures. To mitigate potential disruption, the company has implemented alternative supply chain measures and expanded production across other global manufacturing sites to maintain customer deliveries.
According to Nexperia, supply availability has already normalized in many product categories, while capacity expansion efforts continue in other areas. The company expects further stabilization over the course of 2026.
Original – Nexperia
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Analog Devices reported strong fiscal second-quarter 2026 results, exceeding the high end of guidance as demand accelerated across all end markets, particularly Industrial and Communications.
Quarterly revenue reached $3.62 billion, supported by record bookings in industrial, automotive, and communications segments. The company also demonstrated strong profitability and cash generation, with trailing twelve-month operating cash flow of $5.1 billion and free cash flow of $4.6 billion, representing 40% and 36% of revenue respectively.
Profitability remained robust, reflecting what management described as a combination of record demand and disciplined operational execution. ADI also returned $1.3 billion to shareholders during the quarter through dividends and share repurchases, highlighting continued financial strength.
From a market perspective, the strong Industrial and Communications performance is significant for the broader power and analog semiconductor ecosystem. Growth in AI infrastructure, factory automation, connectivity, and electrification continues to drive demand for high-performance analog, signal processing, and power management solutions.
Looking ahead, Analog Devices expects continued momentum in fiscal Q3 2026, forecasting approximately $3.9 billion in revenue with strong operating margins. The outlook suggests ongoing recovery and expansion across core B2B markets, particularly in industrial automation, automotive electrification, and communications infrastructure.
The company also announced a quarterly dividend of $1.10 per share, reinforcing its commitment to shareholder returns alongside continued investment in technology leadership.
Original – Analog Devices
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LATEST NEWSVishay to Showcase Power Semiconductor and Passive Solutions for Electrification at PCIM Europe 2026
May 20, 2026
2 Min ReadVishay Intertechnology will present its latest passive components, semiconductors, and reference designs at PCIM Europe 2026, focusing on technologies that support electrification, energy efficiency, and decarbonization across automotive, industrial, renewable energy, and data center applications.
The company’s exhibit will highlight a broad range of passive solutions, including advanced power resistors, shunts, capacitors, magnetics, and inductors designed to improve power density, thermal performance, and system reliability. These products target applications such as EVs, renewable energy systems, industrial drives, and AI data center power supplies.
On the semiconductor side, Vishay will showcase silicon carbide (SiC) MOSFET-based power modules and reference designs aimed at high-voltage power conversion systems for e-mobility and energy infrastructure. The company will also feature optoelectronic components, sensors, and system-level design solutions intended to accelerate development cycles and optimize system efficiency.
In addition, Vishay plans to demonstrate compact haptic feedback technologies and control software designed for rapid implementation of advanced user interface experiences.
A key highlight at the event will be a presentation on future DC-coupled EV charging architectures, focusing on efficient photovoltaic-to-EV energy transfer without the limitations associated with traditional AC coupling.
From a market perspective, Vishay’s portfolio strategy reflects increasing convergence between passive and active power technologies as system designers pursue higher efficiency and greater integration. The company is positioning itself as a broad solutions provider supporting key growth areas including electrified transportation, renewable energy, industrial automation, and AI-driven infrastructure.
Original – Vishay Intertechnology
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Navitas Semiconductor will present its latest GaNFast™ and GeneSiC™ technologies at PCIM 2026, highlighting solutions for AI data centers, solid-state transformers (SSTs), industrial electrification, and next-generation power infrastructure.
The company’s showcase includes expanded GaN product offerings ranging from ultra-low 0.8 mΩ 100 V devices to 650 V solutions at 11 mΩ, alongside new GaNSafe™, GaNSlim™, and bidirectional GaN IC platforms. On the SiC side, Navitas is featuring 3300 V, 2300 V, and 1200 V Trench-Assisted Planar (TAP) SiC devices, including advanced SiCPAK™ press-fit modules and recently introduced 5th-generation GeneSiC MOSFETs in QDPAK and low-profile TO-247 packages.
A major focus is AI data center power architecture, particularly the transition toward 800 VDC distribution. Navitas will demonstrate a 20 kW 800 V-to-6 V power delivery board targeting 97.5% peak efficiency by eliminating the traditional 48 V intermediate bus converter stage. The company will also showcase a 10 kW 800 V-to-50 V DC-DC platform delivering 98.5% efficiency and 2.1 kW/in³ power density using its latest GaNFast devices.
For grid and energy infrastructure applications, Navitas will present multiple solid-state transformer solutions utilizing ultra-high-voltage SiC technology. These include an EPFL-developed SST cell based on 3300 V and 1200 V SiC devices and a 50 kVA bidirectional SST platform built with SiCPAK modules and Texas Instruments control technology.
In industrial electrification, the company is demonstrating GaNSense™ motor drive ICs with integrated sensing and protection functions, as well as GaNSlim™ power ICs designed to simplify high-efficiency power conversion in performance computing systems.
Original – Navitas Semiconductor
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Efficient Power Conversion has announced a global distribution agreement with Mouser Electronics, expanding worldwide access to EPC’s full portfolio of enhancement-mode GaN (eGaN®) FETs and integrated circuits.
The agreement enables Mouser customers to access EPC’s complete GaN product lineup spanning 15 V to 350 V devices, supporting applications including power converters, motor drives, e-mobility systems, robotics, and drones. EPC stated that its latest generation of GaN products delivers improved performance compared to conventional silicon MOSFETs, earlier GaN generations, and competing solutions.
Strategically, the partnership is designed to broaden EPC’s engagement with engineers and accelerate GaN adoption by improving product accessibility and shortening design cycles. Through Mouser’s global distribution infrastructure, engineers can more easily evaluate and integrate EPC’s latest power technologies into new designs.
Original – Efficient Power Conversion
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CVD Equipment Corporation reported first-quarter 2026 results alongside the completion of a major strategic restructuring centered on the divestiture of its SDC business division.
The company finalized the sale of the SDC unit on April 1, 2026, generating net cash proceeds of approximately $14.8 million after expenses and liabilities. Following the transaction, CVD Equipment now holds roughly $23 million in cash and carries no long-term debt, significantly strengthening its financial position.
With the divestiture completed, the company is now fully focused on its core CVD Equipment business, which develops chemical vapor deposition, physical vapor transport, and thermal processing systems.
Operationally, first-quarter performance remained weak due to reduced system demand. Revenue from continuing operations declined 70.9% year-over-year to $1.8 million, reflecting lower bookings for CVD systems. Gross margin fell to 8.0%, impacted by lower factory utilization and weaker absorption of fixed manufacturing costs. The company reported a net loss from continuing operations of $1.7 million.
Despite softer system demand, orders improved modestly to $1.8 million, primarily driven by spare parts demand. Management cited ongoing headwinds including geopolitical uncertainty, reduced U.S. government funding for universities, and slower adoption rates in certain end markets.
Strategically, the company continues implementing cost-reduction measures, including outsourcing selected fabrication processes and workforce reductions initiated in late 2025. These initiatives are expected to reduce annual operating costs by approximately $1.8 million in 2026.
CVD Equipment remains focused on several targeted growth areas, including aerospace and defense, silicon carbide (SiC) processing applications, high-power electronics, and emerging nuclear energy opportunities.
Original – CVD Equipment
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Efficient Power Conversion will showcase its latest Gen 7 gallium nitride (GaN) power technologies at PCIM Europe 2026, focusing on humanoid robotics, drone propulsion, compact motion systems, and AI power delivery applications.
The company’s demonstrations center on how high-frequency GaN devices enable smaller, lighter, and more efficient motion-control and power-conversion architectures. EPC’s latest integrated ePower Stage ICs, including the EPC33110 and EPC2310x families, target compact three-phase motor drives for humanoid joints, robotic arms, and drone propulsion systems. These devices support operation up to 100 V with current capability up to 35 A, delivering high switching frequency and improved power density for intelligent motion systems.
EPC will also highlight multiple low-voltage GaN FETs optimized for AI infrastructure and high-density DC-DC conversion, including:
- EPC2366 (40 V, 0.84 mΩ) for synchronous rectification,
- EPC2361 (100 V, 0.75 mΩ),
- EPC2304 and EPC2305 for isolated DC-DC conversion,
- New Gen 7 devices such as EPC2370, EPC2377, EPC2378, and EPC2375 in compact dual-cooled QFN packages.
The company will demonstrate these components across several reference platforms, including:
- Three-phase inverter boards for robotic and drone propulsion,
- High-density isolated converters for AI servers,
- Totem-pole PFC stages,
- Intermediate bus converters and synchronous buck architectures.
A major strategic theme is EPC’s positioning of low-voltage GaN as a core enabling technology for both intelligent motion systems and AI computing infrastructure. The company emphasizes that higher switching frequencies allow reductions in passive component size, system weight, and thermal complexity while improving transient response and overall efficiency.
Beyond robotics and drones, EPC will showcase how the same GaN platform supports compact electrified systems such as e-bikes and power tools, while also scaling into multi-kilowatt AI server power architectures.
Original – Efficient Power Conversion
