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Polar Semiconductor and Nexperia have announced a strategic collaboration to manufacture next-generation power MOSFET devices at Polar Semiconductor’s U.S.-based wafer fabrication facility.
The partnership combines Polar’s domestic manufacturing capabilities and power semiconductor process expertise with Nexperia’s advanced MOSFET technology portfolio. The collaboration is aimed at supporting growing global demand across AI server infrastructure, robotics, industrial automation, and automotive applications.
Under the agreement, Nexperia is developing a broad roadmap of next-generation power MOSFETs covering multiple voltage classes and package technologies, while Polar provides high-volume manufacturing capacity from its Minnesota-based facility. Polar brings more than 25 years of automotive manufacturing experience and operates under IATF 16949 certification with a focus on zero-defect manufacturing.
Original – Nexperia
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Magnachip Semiconductor Corporation announced that it will present its medium-voltage (MV) MOSFET portfolio for AI servers and data center power systems at PCIM Europe 2026 in Nuremberg, Germany.
The company will highlight MOSFET solutions designed for server power supply units (PSUs), high-performance computing (HPC), industrial power systems, and solar inverters. These products target the growing need for higher power efficiency, increased power density, and improved thermal management in AI-driven infrastructure.
Magnachip’s MV MOSFET family is based on advanced Shielded-Gate Trench (SGT) technology, supporting improved current density and switching performance while enabling compact, high-temperature power designs. The devices are intended for critical power conversion stages such as synchronous rectification in AI server and HPC power architectures.
In addition to MV MOSFETs, Magnachip will showcase its broader power semiconductor portfolio, including low-voltage MOSFETs, super-junction MOSFETs, IGBTs, silicon carbide devices, and power ICs supporting applications across automotive, industrial automation, energy storage, and renewable energy systems.
Original – Magnachip Semiconductor
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ROHM Co., Ltd. announced its participation in PCIM Expo & Conference 2026, where the company will present its latest power semiconductor technologies aimed at improving efficiency, power density, and system miniaturization across automotive, industrial, and infrastructure applications.
At booth 318 in Hall 9, ROHM will highlight a broad portfolio of silicon carbide and gallium nitride technologies designed to address increasing power requirements in electrification and AI-driven applications.
The company’s automotive demonstrations will focus on electrified powertrain technologies, including traction inverters, onboard chargers, battery disconnect systems, thermal management solutions, and embedded technologies supporting next-generation vehicle architectures.
For industrial and infrastructure applications, ROHM will showcase SiC- and GaN-based solutions targeting renewable energy systems, AI servers, data centers, and industrial power supplies. These applications continue to drive demand for higher efficiency and improved thermal performance as power requirements increase.
ROHM will also present application-oriented power modules and discrete device portfolios developed through global partnerships, demonstrating practical implementations of advanced power conversion topologies.
Original – ROHM
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Microchip Technology has introduced new 3.3 kV HV-D3 mSiC® power modules aimed at accelerating adoption of solid-state transformer (SST) architectures in AI hyperscale data centers and other high-voltage power applications.
The modules integrate 3.3 kV silicon carbide (SiC) MOSFETs and Schottky diodes in an industry-standard 62 mm package, enabling more direct conversion from medium-voltage grid infrastructure to server rack power systems. The launch reflects growing industry interest in reducing power-conversion stages as AI compute clusters continue to push power requirements into multi-megawatt territory.
The HV-D3 modules are built around Microchip’s mSiC technology and incorporate features designed for high-voltage operation, including 6 kV isolation capability, CTI 600-rated materials, extended creepage distances, and a silicon nitride (Si₃N₄) substrate for improved thermal performance and power-cycling reliability. The higher voltage rating enables designers to reduce the number of series-connected devices by roughly half compared with lower-voltage SiC alternatives when interfacing with 13.8 kV and 34.5 kV grid systems.
The product family targets the 100–300 A range, a segment positioned between discrete SiC devices and larger power modules. Available configurations include half-bridge and common-source topologies, with optional anti-parallel Schottky diodes, supporting both hard-switching and soft-switching applications.
Beyond AI infrastructure, the modules address multiple high-power markets including megawatt EV charging systems, medium-voltage motor drives, rail and heavy transportation, and industrial and defense power systems.
Original – Microchip Technology
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Infineon Technologies AG will showcase its broad semiconductor portfolio at PCIM Europe 2026, emphasizing future power infrastructure, AI data centers, robotics, and electromobility. The company’s demonstrations span silicon (Si), silicon carbide (SiC), and gallium nitride (GaN) technologies, reinforced by software, design tools, and cybersecurity capabilities.
A major focus area is future-proof power infrastructure. As AI data centers and electrified industries increase power demand, Infineon is highlighting technologies for battery energy storage systems, uninterruptible power supplies (UPS), solid-state transformers (SSTs), and solid-state circuit breakers (SSCBs). Notably, its CoolSiC™ JFET-based SSCB solutions are designed to provide microsecond-level fault isolation for next-generation DC grids.
For AI data centers, Infineon is presenting a “grid-to-core” approach that covers the complete power delivery chain. Solutions include semiconductor devices, gate drivers, microcontrollers, and sensors supporting high-voltage DC architectures, intermediate bus converters, voltage regulators, battery backup units, and intelligent protection systems. This reflects the industry’s ongoing shift toward HVDC sidecars and DC microgrid architectures required by rapidly increasing AI workloads.
In electromobility, Infineon is showcasing integrated system-level solutions for traction inverters, on-board chargers, DC-DC converters, and battery management systems. Its “One Inverter, One Infineon” concept combines multiple semiconductor technologies to optimize drivetrain efficiency, reduce system complexity, and improve space utilization. Demonstrations also include CoolSiC™, CoolGaN™, EasyPACK™ S modules, CIPOS™ Prime solutions, XENSIV™ sensors, and AURIX™ TC4xx microcontrollers.
The company is also targeting the fast-growing robotics market, demonstrating high-efficiency motor control and power management systems for industrial robots, drones, and emerging humanoid platforms. These solutions leverage CoolGaN power semiconductors, PSOC™ Control C3 microcontrollers, and XENSIV sensors to deliver compact and highly responsive control architectures.
Beyond semiconductor hardware, Infineon is emphasizing security and regulatory readiness through support for the upcoming EU Cyber Resilience Act. The company is positioning secured-by-design semiconductor solutions as a key differentiator for customers facing increasing cybersecurity and compliance requirements.
Original – Infineon Technologies
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STMicroelectronics has expanded its STPOWER portfolio with a new family of 700 V gallium nitride (GaN) power transistors designed to improve efficiency and increase power density in medium- and high-power applications.
The new enhancement-mode PowerGaN HEMTs target rapidly growing markets including AI servers, robotics, industrial power supplies, smart-grid infrastructure, and advanced electrification systems. By extending GaN technology into higher power levels, ST aims to address increasing performance demands that are challenging the limits of conventional silicon-based power solutions.
The new portfolio consists of seven devices with current ratings ranging from 6 A to 29 A and typical RDS(on) values between 53 mΩ and 270 mΩ. The devices leverage the inherent advantages of GaN technology, including low conduction losses, extremely low switching losses at high frequencies, low gate charge, and zero reverse recovery characteristics.
These features enable operation at significantly higher switching frequencies, allowing reductions in the size of magnetic components and passive elements while increasing overall power density and lowering system operating temperatures.
From a packaging standpoint, the devices are available in DPAK, TO-LL, and PowerFLAT surface-mount packages. TO-LL and PowerFLAT versions include Kelvin source connections that improve noise immunity, enhance gate-driver performance, and support cleaner switching behavior.
Original – STMicroelectronics
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Cyient Semiconductors has announced a strategic financing transaction with funds managed by EAAA India Alternatives Ltd and affiliated co-investors, aimed at accelerating growth in power semiconductors and custom silicon solutions.
The transaction includes approximately $10 million in equity financing at a post-money valuation of roughly $500 million, along with approximately $20 million in structured debt. The combined funding of approximately $30 million is intended to strengthen the company’s capital structure and support expansion of its global semiconductor business.
The investment comes as artificial intelligence increasingly shifts focus toward power efficiency challenges. Rapid growth in AI computing infrastructure is expected to drive a sharp increase in data center power consumption, creating opportunities for companies with differentiated power semiconductor technologies.
Over the past year, Cyient Semiconductors has significantly expanded its semiconductor capabilities through several strategic moves. The company acquired Kinetic Technologies, adding a portfolio of more than 250 products, over 100 patents, and a cumulative shipment base exceeding 3 billion chips. It also launched India’s first GaN power IC family through collaboration with Navitas and established ecosystem partnerships with GlobalFoundries, MIPS, and Navitas.
The company intends to deploy the new funding across three major areas: accelerating product R&D for power semiconductors and custom ASSPs, building in-house semiconductor validation and testing capabilities in India, and supporting working capital needs for larger global customer programs.
Original – Cyient Semiconductors
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Nexperia has issued a response regarding recent developments involving Wingtech Technology, stating that the company remains focused on restoring operational stability and maintaining continuity for customers and partners worldwide.
Nexperia indicated that legal actions initiated in October 2025 were intended to address what it described as severe management issues and governance concerns, including alleged conflicts of interest involving suspended leadership. The company also noted that a relevant court has not formally opened the recently announced case for trial.
According to Nexperia, operational disruptions since late 2025 affected parts of its China business, including supply chain execution and internal management processes. The company stated that it has taken steps to restore normal operations and ensure continuity of wafer supply and product deliveries for its global customer base.
Nexperia also referenced a February 2026 decision by the Dutch Enterprise Chamber, which reportedly identified grounds for questioning previous management practices and initiated an investigation process. The company stated that it will continue to cooperate fully with the investigation.
Original – Nexperia
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LATEST NEWS / PRODUCT & TECHNOLOGY / SiC / TOP STORIES / WBGWolfspeed Launches New 3.3 kV SiC Power Module Families for AI Infrastructure and Grid Modernization
May 21, 2026
2 Min ReadWolfspeed has introduced two new 3.3 kV silicon carbide power module families aimed at addressing rising power conversion demands driven by AI data centers, renewable energy systems, and broader electrification trends.
The launch includes a high-power half-bridge baseplate module for applications exceeding 800 A, as well as a scalable full-bridge baseplate-less module under the WolfPACK® platform. Both are designed around industry-standard footprints and target next-generation medium-voltage power architectures.
The baseplate module is optimized for high-power applications such as solar inverters, wind energy systems, and grid-scale storage, while the WolfPACK® family is focused on modular solid-state transformer (SST) architectures and renewable energy infrastructure. The flexibility of the baseplate-less approach enables series-stacked and multi-level converter configurations, supporting scalable high-voltage systems.
Technically, both module families are designed for continuous 24/7 operation in 2 kV+ DC-link environments. They incorporate advanced packaging technologies such as sintered die attach, improved encapsulation materials, and enhanced cosmic ray robustness to improve reliability and power cycling performance.
From a performance perspective, the new baseplate module reportedly delivers up to 42% lower switching losses compared to competing SiC solutions and more than 90% lower losses compared to traditional IGBT systems under comparable operating conditions. The WolfPACK® architecture also enables significant reductions in system footprint, supporting more compact solid-state transformer designs.
Original – Wolfspeed
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Toshiba Electronics Europe GmbH has begun test-sample shipments of its new TW007D120E, a 1200 V trench-gate silicon carbide MOSFET targeting high-efficiency power systems for AI data centers and other high-power infrastructure applications.
The device is packaged in a top-side cooled QDPAK format, enabling improved thermal dissipation and higher power density—critical requirements for next-generation AI server power supplies and emerging 800 V HVDC data center architectures. In addition to AI infrastructure, the MOSFET is also positioned for renewable energy systems, UPS equipment, EV charging stations, and energy storage applications.
Technically, the TW007D120E utilizes Toshiba’s proprietary trench-gate SiC structure to significantly improve on-resistance per unit area. The device achieves a typical RDS(on) of 7.0 mΩ with 172 A drain current capability and 33 nC gate-drain charge. Compared with Toshiba’s previous-generation 1200 V SiC MOSFET, the new product reduces specific on-resistance by approximately 58% and improves the key switching/conduction loss figure-of-merit by around 52%.
The device also supports lower gate drive voltages between 15 V and 18 V, helping reduce system complexity and power losses while improving overall efficiency.
Original – Toshiba
