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Infineon Technologies AG has achieved a significant milestone in automotive power electronics with the introduction of a new 1300 V silicon carbide module within its HybridPACK™ Drive family, capable of continuous operation at junction temperatures up to 205°C.
The new module raises the temperature limit well above the typical 175°C threshold used in current automotive inverter designs. This advancement enables automotive OEMs and Tier 1 suppliers to extract higher peak and continuous power from existing inverter platforms or reduce cooling requirements and system complexity in next-generation designs.
A key benefit is the ability to deliver up to 15% higher output current compared with existing SiC modules, directly increasing inverter power density. Importantly, the new device maintains the same package dimensions, interfaces, and footprint as current HybridPACK Drive products, allowing seamless integration into existing vehicle platforms without major redesign efforts.
The module also introduces a 1300 V blocking voltage—the first within the HybridPACK Drive family—providing additional voltage margin and robustness for future electric vehicle architectures operating beyond 900 V battery systems. This positions the technology for next-generation high-voltage EV platforms that require greater efficiency and charging performance.
The first production device featuring the new capability, FS01M9R13A7MA2B, is already available to the market, with Infineon planning to extend the 205°C operating capability across its broader 1200 V SiC HybridPACK Drive portfolio.
Original – Infineon Technologies
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onsemi is expanding its participation in the NVIDIA MGX™ ecosystem, strengthening its position as a key supplier of power semiconductor technologies for next-generation AI infrastructure.
As AI workloads drive rack power requirements toward and beyond 1 MW, efficient power delivery has become one of the most critical challenges facing hyperscale and enterprise data centers. NVIDIA’s MGX modular architecture is designed to accelerate deployment of AI systems, and onsemi is providing power solutions across multiple stages of the power conversion chain within this ecosystem.
The company’s portfolio spans silicon, silicon carbide (SiC), and gallium nitride (GaN) technologies, supporting applications ranging from power supply units (PSUs) and battery backup units (BBUs) to emerging 800 VDC power distribution architectures. Existing MGX platforms already utilize onsemi technologies, with opportunities expanding across power MOSFETs, multiphase power solutions, SiC JFETs, and GaN devices.
A major focus is the industry’s transition toward high-voltage 800 VDC architectures, which are increasingly viewed as essential for scaling AI infrastructure efficiently. These architectures enable higher power density, reduced distribution losses, lower infrastructure complexity, and support for future rack-level power requirements exceeding 1 MW.
Original – onsemi
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Infineon Technologies AG has joined NVIDIA’s MGX AI Factory ecosystem, strengthening its role in next-generation AI data center power infrastructure and supporting the industry transition toward 800 VDC power distribution architectures.
Through the collaboration, Infineon will provide power management technologies for NVIDIA’s MGX™ modular server platform and emerging 800 VDC data center architecture. The partnership focuses on improving power efficiency, power density, and scalability as AI workloads continue to drive unprecedented energy demands across hyperscale data centers.
Infineon’s contribution spans the entire power conversion chain from grid to processor core, leveraging its portfolio of silicon (Si), silicon carbide (SiC), and gallium nitride (GaN) technologies. The company’s GaN devices enable ultra-compact, high-frequency bus converters operating near 1 MHz, while its proprietary SiC JFET technology supports critical protection and hot-swap functions for native 800 V server platforms.
The company’s power solutions support multiple conversion stages, including 800 V to 50 V, 12 V, and 6 V architectures, helping reduce conversion losses and move power delivery closer to AI processors. This approach improves overall system efficiency while enabling higher rack power densities required by future AI infrastructure.
Original – Infineon Technologies
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Nexperia announced that a court hearing was held in Arnhem, the Netherlands, regarding a request for a preliminary witness hearing filed by Yuching, Nexperia’s direct shareholder.
During the hearing, Nexperia argued that the request should be rejected, citing an ongoing independent investigation already commissioned by the Enterprise Chamber of Amsterdam in February 2026. According to the company, the scope of that investigation covers the same topics and individuals that Yuching seeks to examine through the witness hearing process.
Nexperia further contended that the request is based on incomplete information and characterized it as an attempt to exert pressure on the company’s senior management rather than a genuine effort to obtain new information. The company stated that despite the launch of the independent inquiry, Yuching chose not to withdraw its separate legal request.
The dispute reflects broader governance tensions involving Yuching, board member Zhang Xuezheng (Wing), and shareholder Wingtech. Nexperia alleges that these parties have repeatedly challenged the company’s governance structure and business operations, while seeking information beyond their entitled access.
Nexperia stated that it is now awaiting the Arnhem court’s decision while continuing to support the independent investigation process.
Original – Nexperia
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Innoscience outlined its roadmap for enabling next-generation AI data center power delivery through an end-to-end “All-GaN” architecture aligned with the evolving NVIDIA MGX ecosystem and emerging 800 VDC power distribution standards.
As AI factories scale toward megawatt-level rack power, efficient power conversion has become a critical bottleneck. Innoscience positions gallium nitride (GaN) technology as a key enabler of future AI infrastructure, citing its ability to deliver higher switching frequencies, lower losses, improved thermal performance, and greater power density than conventional silicon solutions.
The company’s roadmap spans the entire AI power delivery chain, from 800 VDC rack distribution down to GPU core voltages. At the front-end conversion stage, Innoscience demonstrated a 12 kW 800 V-to-48 V all-GaN LLC converter utilizing 650 V and 100 V GaN devices, achieving approximately 99% peak efficiency and 98.2% full-load efficiency while operating at 1 MHz. The company has also introduced 150 V GaN devices that reduce secondary-side synchronous rectifier requirements by 50%, simplifying system design and improving power density.
Beyond the 48 V architecture, Innoscience is extending its portfolio to support emerging 800 V-to-12 V and 800 V-to-6 V conversion topologies that are gaining traction in next-generation AI server designs. These architectures aim to reduce conversion stages, lower distribution losses, and move power conversion closer to GPUs.
For intermediate bus conversion, the company highlighted its 100 V GaN portfolio for 48 V-to-12 V multiphase buck converters, targeting higher efficiency and power density in AI servers where even marginal efficiency gains can significantly reduce cooling and operating costs at data center scale.
At the point-of-load level, Innoscience is developing 15 V DrGaN technology for vertical power delivery (VPD) architectures. Operating at switching frequencies between 3 MHz and 5 MHz, these solutions are designed to support future GPU power requirements by reducing passive component size, improving transient response, and enabling power stages to be located closer to AI accelerators.
Original – Innoscience Technology
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Analog Devices outlined its role in enabling next-generation AI factory power infrastructure through collaboration within the NVIDIA MGX™ ecosystem, focusing on the transition from traditional 48 V architectures to 800 VDC power distribution.
As AI workloads continue to drive higher rack-level power densities, conventional power delivery systems are reaching their practical limits. ADI emphasizes that future AI factories will increasingly adopt 800 VDC architectures to reduce current levels, lower distribution losses, improve power density, and support megawatt-scale rack deployments required by advanced AI clusters.
The company highlighted the growing trend toward modular power architectures enabled by NVIDIA MGX, where power systems are increasingly disaggregated from compute racks. This approach allows greater design flexibility, faster technology adoption, and more efficient utilization of rack space for compute resources.
A critical element of this transition is high-voltage hot-swap capability, which enables live insertion and removal of server trays without disrupting operations. At 800 VDC, this requires sophisticated protection and control technologies capable of managing high-energy inrush currents, detecting faults rapidly, and providing real-time telemetry.
ADI is leveraging its expertise in power protection, monitoring, and control to develop 800 VDC hot-swap and DC-DC conversion solutions tailored for AI infrastructure. These technologies are designed to provide high-density integration, fast fault protection, and advanced telemetry functions that support system optimization and predictive maintenance.
Original – Analog Devices
