USI has unveiled a new advanced power semiconductor packaging technology platform that embeds silicon carbide (SiC) dies into multilayer ABF substrates while integrating ceramic insulation and wire-bondless architectures into industry-standard power module packages.
The new technology combines SiC chip embedding with Single-Side Copper Exposed (SSC) packaging to deliver lower stray inductance, reduced conduction resistance, and improved thermal performance. By integrating ceramic substrate insulation directly into the package structure, USI eliminates the need for additional isolation components while maintaining electrical reliability and compact form factors.
A key innovation is the adoption of a wire-bondless architecture, which improves current handling and thermal dissipation while enabling larger die integration within slimmer package footprints. Compared with traditional wire-bonded module designs, the approach reduces conduction losses, lowers heat generation, and enhances long-term reliability — all critical requirements for high-power-density applications such as AI data centers, electric vehicles, and humanoid robotics.
USI is positioning itself beyond traditional EMS manufacturing by expanding into higher-value power module integration and advanced packaging services. The company also emphasized its broader automotive powertrain capabilities, including 400 V/800 V inverter systems, intelligent battery disconnect units (iBDUs), and integrated OBC/DC-DC solutions.
The technology aligns with broader industry trends toward highly integrated, thermally optimized power systems for electrification and AI infrastructure. USI plans to showcase the new packaging platform and related power solutions at PCIM Europe 2026.
Original – USI