Microchip Technology has introduced new 3.3 kV HV-D3 mSiC® power modules aimed at accelerating adoption of solid-state transformer (SST) architectures in AI hyperscale data centers and other high-voltage power applications.
The modules integrate 3.3 kV silicon carbide (SiC) MOSFETs and Schottky diodes in an industry-standard 62 mm package, enabling more direct conversion from medium-voltage grid infrastructure to server rack power systems. The launch reflects growing industry interest in reducing power-conversion stages as AI compute clusters continue to push power requirements into multi-megawatt territory.
The HV-D3 modules are built around Microchip’s mSiC technology and incorporate features designed for high-voltage operation, including 6 kV isolation capability, CTI 600-rated materials, extended creepage distances, and a silicon nitride (Si₃N₄) substrate for improved thermal performance and power-cycling reliability. The higher voltage rating enables designers to reduce the number of series-connected devices by roughly half compared with lower-voltage SiC alternatives when interfacing with 13.8 kV and 34.5 kV grid systems.
The product family targets the 100–300 A range, a segment positioned between discrete SiC devices and larger power modules. Available configurations include half-bridge and common-source topologies, with optional anti-parallel Schottky diodes, supporting both hard-switching and soft-switching applications.
Beyond AI infrastructure, the modules address multiple high-power markets including megawatt EV charging systems, medium-voltage motor drives, rail and heavy transportation, and industrial and defense power systems.
Original – Microchip Technology