Toshiba Electronics Europe GmbH has begun test-sample shipments of its new TW007D120E, a 1200 V trench-gate silicon carbide MOSFET targeting high-efficiency power systems for AI data centers and other high-power infrastructure applications.
The device is packaged in a top-side cooled QDPAK format, enabling improved thermal dissipation and higher power density—critical requirements for next-generation AI server power supplies and emerging 800 V HVDC data center architectures. In addition to AI infrastructure, the MOSFET is also positioned for renewable energy systems, UPS equipment, EV charging stations, and energy storage applications.
Technically, the TW007D120E utilizes Toshiba’s proprietary trench-gate SiC structure to significantly improve on-resistance per unit area. The device achieves a typical RDS(on) of 7.0 mΩ with 172 A drain current capability and 33 nC gate-drain charge. Compared with Toshiba’s previous-generation 1200 V SiC MOSFET, the new product reduces specific on-resistance by approximately 58% and improves the key switching/conduction loss figure-of-merit by around 52%.
The device also supports lower gate drive voltages between 15 V and 18 V, helping reduce system complexity and power losses while improving overall efficiency.
Original – Toshiba